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DSEI60-10A
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Littelfuse IXYS Fast Recovery / High Efficiency Diodes, TO-247-2. Pinout reviewed by a person against the datasheet, KiCad symbol/footprint/3D.
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DSEI60-10A
Littelfuse IXYS · Fast Recovery / High Efficiency Diodes · TO-247-2
DSEI60-10A from Littelfuse IXYS, in a TO-247-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | C | passive | Cathode lead of the 1000 V (VRRM) fast recovery epitaxial diode, electrically common with the mounting tab. |
| 2 | A | passive | Anode lead of the 60 A (IFAVM) fast recovery epitaxial diode. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Littelfuse IXYS |
| Package | TO-247-2 |
| Category | Diodes |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Repetitive peak reverse voltage | VRRM | 1000 | V | 1 | |||
| Non-repetitive peak reverse voltage | VRSM | 1000 | V | 1 | |||
| RMS forward current | IFRMS | 100 | A | TVJ = TVJM | 1 | ||
| Average forward current | IFAVM | 60 | A | TC = 60C; rectangular, d = 0.5 | 1 | ||
| Repetitive peak forward current | IFRM | 800 | A | tP < 10 s; rep. rating, pulse width limited by TVJM | 1 | ||
| Surge forward current | IFSM | 500 | A | TVJ = 45C; t = 10 ms (50 Hz), sine | 1 | ||
| Surge forward current | IFSM | 540 | A | TVJ = 45C; t = 8.3 ms (60 Hz), sine | 1 | ||
| Surge forward current | IFSM | 450 | A | TVJ = 150C; t = 10 ms (50 Hz), sine | 1 | ||
| Surge forward current | IFSM | 480 | A | TVJ = 150C; t = 8.3 ms (60 Hz), sine | 1 | ||
| I2t value | I2t | 1250 | A2s | TVJ = 45C; t = 10 ms (50 Hz), sine | 1 | ||
| I2t value | I2t | 1200 | A2s | TVJ = 45C; t = 8.3 ms (60 Hz), sine | 1 | ||
| I2t value | I2t | 1000 | A2s | TVJ = 150C; t = 10 ms (50 Hz), sine | 1 | ||
| I2t value | I2t | 950 | A2s | TVJ = 150C; t = 8.3 ms (60 Hz), sine | 1 | ||
| Operating junction temperature | TVJ | -40 | 150 | C | 1 | ||
| Maximum junction temperature | TVJM | 150 | C | 1 | |||
| Storage temperature | Tstg | -40 | 150 | C | 1 | ||
| Total power dissipation | Ptot | 189 | W | TC = 25C | 1 | ||
| Reverse current | IR | 3 | mA | TVJ = 25C; VR = VRRM | 1 | ||
| Reverse current | IR | 0.5 | mA | TVJ = 25C; VR = 0.8 • VRRM | 1 | ||
| Reverse current | IR | 14 | mA | TVJ = 125C; VR = 0.8 • VRRM | 1 | ||
| Forward voltage | VF | 1.8 | V | IF = 60 A; TVJ = 150C | 1 | ||
| Forward voltage | VF | 2.3 | V | IF = 60 A; TVJ = 25C | 1 | ||
| Threshold voltage for power-loss calculation | VT0 | 1.43 | V | For power-loss calculations only | 1 | ||
| Slope resistance | rT | 6.1 | m | TVJ = TVJM | 1 | ||
| Thermal resistance junction to case | RthJC | 0.66 | K/W | 1 | |||
| Thermal resistance case to heatsink | RthCK | 0.25 | K/W | 1 | |||
| Thermal resistance junction to ambient | RthJA | 35 | K/W | 1 | |||
| Reverse recovery time | trr | 35 | 50 | ns | IF = 1 A; -di/dt = 200 A/s; VR = 30 V; TVJ = 25C | 1 | |
| Peak reverse recovery current | IRM | 32 | 36 | A | VR = 540 V; IF = 60 A; -diF/dt = 480 A/s; L 0.05 H; TVJ = 100C | 1 |
CAD (KiCad official)
- Symbol:
DSEI60-10A - Footprint:
Package_TO_SOT_THT:TO-247-2_Vertical - 3D model: TO-247-2 (KiCad packages3D, STEP)
- 3D model files:
dsei60-10a-etched.step/dsei60-10a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dsei60-10a.step/dsei60-10a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Littelfuse IXYS datasheet (2 pp, sha256
e2197a02bc869d26, retrieved 2026-10-20, tier: lcsc) - Extractor:
ds2sf(Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# DSEI60-10A
**Littelfuse IXYS** · Fast Recovery / High Efficiency Diodes · TO-247-2
DSEI60-10A from Littelfuse IXYS, in a TO-247-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | C | passive | Cathode lead of the 1000 V (VRRM) fast recovery epitaxial diode, electrically common with the mounting tab. |
| 2 | A | passive | Anode lead of the 60 A (IFAVM) fast recovery epitaxial diode. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Littelfuse IXYS |
| Package | TO-247-2 |
| Category | Diodes |
| Pins | 2 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Repetitive peak reverse voltage | VRRM | | | 1000 | V | | 1 |
| Non-repetitive peak reverse voltage | VRSM | | | 1000 | V | | 1 |
| RMS forward current | IFRMS | | | 100 | A | TVJ = TVJM | 1 |
| Average forward current | IFAVM | | | 60 | A | TC = 60C; rectangular, d = 0.5 | 1 |
| Repetitive peak forward current | IFRM | | | 800 | A | tP < 10 s; rep. rating, pulse width limited by TVJM | 1 |
| Surge forward current | IFSM | | | 500 | A | TVJ = 45C; t = 10 ms (50 Hz), sine | 1 |
| Surge forward current | IFSM | | | 540 | A | TVJ = 45C; t = 8.3 ms (60 Hz), sine | 1 |
| Surge forward current | IFSM | | | 450 | A | TVJ = 150C; t = 10 ms (50 Hz), sine | 1 |
| Surge forward current | IFSM | | | 480 | A | TVJ = 150C; t = 8.3 ms (60 Hz), sine | 1 |
| I2t value | I2t | | | 1250 | A2s | TVJ = 45C; t = 10 ms (50 Hz), sine | 1 |
| I2t value | I2t | | | 1200 | A2s | TVJ = 45C; t = 8.3 ms (60 Hz), sine | 1 |
| I2t value | I2t | | | 1000 | A2s | TVJ = 150C; t = 10 ms (50 Hz), sine | 1 |
| I2t value | I2t | | | 950 | A2s | TVJ = 150C; t = 8.3 ms (60 Hz), sine | 1 |
| Operating junction temperature | TVJ | -40 | | 150 | C | | 1 |
| Maximum junction temperature | TVJM | | | 150 | C | | 1 |
| Storage temperature | Tstg | -40 | | 150 | C | | 1 |
| Total power dissipation | Ptot | | | 189 | W | TC = 25C | 1 |
| Reverse current | IR | | | 3 | mA | TVJ = 25C; VR = VRRM | 1 |
| Reverse current | IR | | | 0.5 | mA | TVJ = 25C; VR = 0.8 • VRRM | 1 |
| Reverse current | IR | | | 14 | mA | TVJ = 125C; VR = 0.8 • VRRM | 1 |
| Forward voltage | VF | | | 1.8 | V | IF = 60 A; TVJ = 150C | 1 |
| Forward voltage | VF | | | 2.3 | V | IF = 60 A; TVJ = 25C | 1 |
| Threshold voltage for power-loss calculation | VT0 | | 1.43 | | V | For power-loss calculations only | 1 |
| Slope resistance | rT | | | 6.1 | m | TVJ = TVJM | 1 |
| Thermal resistance junction to case | RthJC | | | 0.66 | K/W | | 1 |
| Thermal resistance case to heatsink | RthCK | | | 0.25 | K/W | | 1 |
| Thermal resistance junction to ambient | RthJA | | | 35 | K/W | | 1 |
| Reverse recovery time | trr | | 35 | 50 | ns | IF = 1 A; -di/dt = 200 A/s; VR = 30 V; TVJ = 25C | 1 |
| Peak reverse recovery current | IRM | | 32 | 36 | A | VR = 540 V; IF = 60 A; -diF/dt = 480 A/s; L 0.05 H; TVJ = 100C | 1 |
## CAD (KiCad official)
- Symbol: `DSEI60-10A`
- Footprint: `Package_TO_SOT_THT:TO-247-2_Vertical`
- 3D model: TO-247-2 (KiCad packages3D, STEP)
- 3D model files: `dsei60-10a-etched.step` / `dsei60-10a-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `dsei60-10a.step` / `dsei60-10a.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Littelfuse IXYS datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588888174404259840) (2 pp, sha256 `e2197a02bc869d26`, retrieved 2026-10-20, tier: lcsc)
- **Extractor:** `ds2sf` (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/dsei60-10a-datasheet.pdf)