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DS42MB100TSQ
Public Made by Adomby adom
Texas Instruments New Arrivals, QFN-36-EP(6x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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DS42MB100TSQ
Texas Instruments · New Arrivals · QFN-36-EP(6x6)
DS42MB100TSQ from Texas Instruments, in a QFN-36-EP(6x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | DES_1 | input | DES_0 and DES_1 select the output pre-emphasis of the switch-side drivers (OUT0±, OUT1±); both are 3.3-V LVCMOS inputs internally pulled high. |
| 2 | GND | power_in | Ground reference; each ground pin should connect to the ground plane through a low-inductance path, typically a via placed as close as possible to the pad. |
| 3 | OUT0+ | output | Non-inverting switch-side differential output (CML) with an internal 50 Ω termination to VCC. |
| 4 | OUT0- | output | Inverting switch-side differential output (CML) with an internal 50 Ω termination to VCC. |
| 5 | VCC | power_in | Supply pin, VCC = 3.3 V ±5% (3.135 V to 3.465 V), to be connected to the VCC plane through a low-inductance path with a 0.01 µF or 0.1 µF X7R size-0402 bypass capacitor. |
| 6 | IN0+ | input | Non-inverting switch-side MUX differential input (CML) with an internal 50 Ω connected to an internal reference voltage; input differential termination is 100 Ω. |
| 7 | IN0- | input | Inverting switch-side MUX differential input (CML) with an internal 50 Ω connected to an internal reference voltage; input differential termination is 100 Ω. |
| 8 | GND | power_in | Ground reference; connect to the ground plane through a low-inductance path, typically a via placed as close as possible to the pad. |
| 9 | GND | power_in | Ground reference; connect to the ground plane through a low-inductance path, typically a via placed as close as possible to the pad. |
| 10 | DES_0 | input | DES_0 and DES_1 select the output pre-emphasis of the switch-side drivers (OUT0±, OUT1±); 3.3-V LVCMOS input internally pulled high. |
| 11 | EQL | input | A logic low enables the input equalizer on the line side; internally pulled high, with equalization disabled by default. |
| 12 | GND | power_in | Ground reference; connect to the ground plane through a low-inductance path, typically a via placed as close as possible to the pad. |
| 13 | VCC | power_in | Supply pin, VCC = 3.3 V ±5%; connect to the VCC plane through a low-inductance path with a 0.01 µF or 0.1 µF X7R size-0402 bypass capacitor. |
| 14 | GND | power_in | Ground reference; connect to the ground plane through a low-inductance path, typically a via placed as close as possible to the pad. |
| 15 | VCC | power_in | Supply pin, VCC = 3.3 V ±5%; connect to the VCC plane through a low-inductance path with a 0.01 µF or 0.1 µF X7R size-0402 bypass capacitor. |
| 16 | GND | power_in | Ground reference; connect to the ground plane through a low-inductance path, typically a via placed as close as possible to the pad. |
| 17 | RSV | input | Reserved for factory testing; may be left open, tied to GND, or tied to GND through an external pull-down resistor. |
| 18 | DEL_0 | input | DEL_0 and DEL_1 select the output pre-emphasis of the line-side drivers (OUT±); 3.3-V LVCMOS input internally pulled high. |
| 19 | MUX | input | A logic low selects IN1±; 3.3-V LVCMOS input internally pulled high, with the default state selecting IN0±. |
| 20 | GND | power_in | Ground reference; connect to the ground plane through a low-inductance path, typically a via placed as close as possible to the pad. |
| 21 | OUT1- | output | Inverting switch-side differential output (CML) with an internal 50 Ω termination to VCC. |
| 22 | OUT1+ | output | Non-inverting switch-side differential output (CML) with an internal 50 Ω termination to VCC. |
| 23 | VCC | power_in | Supply pin, VCC = 3.3 V ±5%; connect to the VCC plane through a low-inductance path with a 0.01 µF or 0.1 µF X7R size-0402 bypass capacitor. |
| 24 | IN1- | input | Inverting switch-side MUX differential input (CML) with an internal 50 Ω connected to an internal reference voltage; input differential termination is 100 Ω. |
| 25 | IN1+ | input | Non-inverting switch-side MUX differential input (CML) with an internal 50 Ω connected to an internal reference voltage; input differential termination is 100 Ω. |
| 26 | LB1 | input | A logic low enables the internal loopback path from IN1± to OUT1±; 3.3-V LVCMOS input internally pulled high. |
| 27 | DEL_1 | input | DEL_0 and DEL_1 select the output pre-emphasis of the line-side drivers (OUT±); 3.3-V LVCMOS input internally pulled high. |
| 28 | LB0 | input | A logic low enables the internal loopback path from IN0± to OUT0±; 3.3-V LVCMOS input internally pulled high. |
| 29 | GND | power_in | Ground reference; connect to the ground plane through a low-inductance path, typically a via placed as close as possible to the pad. |
| 30 | OUT+ | output | Non-inverting line-side differential output (CML) with an internal 50 Ω termination to VCC. |
| 31 | OUT- | output | Inverting line-side differential output (CML) with an internal 50 Ω termination to VCC. |
| 32 | VCC | power_in | Supply pin, VCC = 3.3 V ±5%; connect to the VCC plane through a low-inductance path with a 0.01 µF or 0.1 µF X7R size-0402 bypass capacitor. |
| 33 | IN+ | input | Non-inverting line-side differential input (CML) with an internal 50 Ω connected to an internal reference voltage; input differential termination is 100 Ω. |
| 34 | IN- | input | Inverting line-side differential input (CML) with an internal 50 Ω connected to an internal reference voltage; input differential termination is 100 Ω. |
| 35 | GND | power_in | Ground reference; connect to the ground plane through a low-inductance path, typically a via placed as close as possible to the pad. |
| 36 | EQS | input | A logic low enables the input equalizer on the switch side; internally pulled high, with equalization disabled by default. |
| 37 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | QFN-36-EP(6x6) |
| Category | Others |
| Pins | 37 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Supply voltage (VCC) | VCC | -0.3 | 4 | V | 4 | ||
| CMOS/TTL input voltage | -0.3 | V | Printed maximum is VCC + 0.3 V; not computed | 4 | |||
| CML input/output voltage | -0.3 | V | Printed maximum is VCC + 0.3 V; not computed | 4 | |||
| Junction temperature | 150 | °C | 4 | ||||
| Lead temperature (soldering) | 260 | °C | Soldering, 4 seconds | 4 | |||
| Storage temperature | Tstg | -65 | 150 | °C | 4 | ||
| Supply voltage (VCC, GND) | VCC | 3.135 | 3.3 | 3.465 | V | 5 | |
| Supply noise amplitude | 100 | mVPP | 10 Hz to 2 GHz | 5 | |||
| Ambient temperature | -40 | 85 | °C | 5 | |||
| Case temperature | 100 | °C | 5 | ||||
| High level input voltage | VIH | 2 | V | Printed maximum is VCC + 0.3 V; not computed | 5 | ||
| Low level input voltage | VIL | -0.3 | 0.8 | V | 5 | ||
| High level input current | IIH | -10 | 10 | µA | VIN = VCC | 5 | |
| Low level input current | IIL | 75 | 94 | 124 | µA | VIN = GND | 5 |
| Differential input voltage (below 1.25 Gbps) | VID | 100 | 1750 | mVP-P | AC coupled; below 1.25 Gbps | 5 | |
| Differential input voltage (1.25 Gbps to 3.125 Gbps) | VID | 100 | 1560 | mVP-P | AC coupled; between 1.25 Gbps and 3.125 Gbps | 5 | |
| Differential input voltage (above 3.125 Gbps) | VID | 100 | 1200 | mVP-P | AC coupled; above 3.125 Gbps | 5 | |
| Input differential termination | RITD | 84 | 100 | 116 | Ω | On-chip differential termination between IN+ or IN− | 5 |
| Driver output differential voltage swing without pre-emphasis | VODB | 1100 | 1300 | 1500 | mVP-P | RL = 100 Ω ±1%; DES_1 = DES_0 = 0; DEL_1 = DEL_0 = 0; running K28.7 pattern at 4.25 Gbps | 6 |
| Pre-emphasis width | TPE | 125 | 188 | 250 | ps | Tested at −9 dB pre-emphasis level, DEx[1:0] = 11 | 6 |
| Output termination | ROTSE | 42 | 50 | 58 | Ω | On-chip termination from OUT+ or OUT− to VCC | 6 |
| Mismatch in output termination resistors | ΔROTSE | 5 | % | Mismatch in output terminations at OUT+ and OUT− | 6 | ||
| Device random jitter (at 0.25 Gbps) | RJ | 2 | psrms | At 0.25 Gbps; alternating 1-0 pattern; EQ and pre-emphasis disabled | 6 | ||
| Device random jitter (at 1.25 Gbps) | RJ | 2 | psrms | At 1.25 Gbps; alternating 1-0 pattern; EQ and pre-emphasis disabled | 6 | ||
| Device random jitter (at 4.25 Gbps) | RJ | 2 | psrms | At 4.25 Gbps; alternating 1-0 pattern; EQ and pre-emphasis disabled | 6 | ||
| Device deterministic jitter | DJ | 35 | psp-p | Between 0.25 and 4.25 Gbps with PRBS7 pattern, DS42MB100 at −40°C to 85°C; EQ and pre-emphasis disabled | 6 | ||
| Data rate | DR | 0.25 | 4.25 | Gbps | Tested with alternating 1-0 pattern | 6 | |
| Differential low to high transition time | tR | 85 | ps | Clock-like pattern at 4.25 Gbps, 20% to 80%; pre-emphasis disabled | 7 | ||
| Differential high to low transition time | tF | 85 | ps | Clock-like pattern at 4.25 Gbps, 20% to 80%; pre-emphasis disabled | 7 | ||
| Pulse skew | tSKP | 20 | ps | /tPHL − tPLH/ | 7 | ||
| Output skew | tSKO | 100 | ps | Difference in propagation delay among data paths in the same device | 7 | ||
| Part-to-part skew | tSKPP | 100 | ps | Same output from devices operating under identical conditions | 7 | ||
| MUX switch time | tSM | 1.8 | 6 | ns | From VIH or VIL of MUX-control or loopback control to 50% of valid differential output | 7 | |
| Junction-to-ambient thermal resistance | RθJA | 32.8 | °C/W | 0 airflow; based on 16 thermal relief vias on the DAP pad | 5 | ||
| Junction-to-case (top) thermal resistance | RθJC(top) | 14.3 | °C/W | 5 | |||
| Junction-to-board thermal resistance | RθJB | 6.2 | °C/W | 5 | |||
| Junction-to-top characterization parameter | ψJT | 0.2 | °C/W | 5 | |||
| Junction-to-board characterization parameter | ψJB | 6.1 | °C/W | 5 | |||
| Junction-to-case (bottom) thermal resistance | RθJC(bot) | 1.9 | °C/W | 5 |
CAD (KiCad official)
- Symbol:
DS42MB100TSQ - Footprint:
Package_DFN_QFN:QFN-36-1EP_6x6mm_P0.5mm_EP3.7x3.7mm - 3D model: QFN-36-EP(6x6) (KiCad packages3D, STEP)
- 3D model files:
ds42mb100tsq-etched.step/ds42mb100tsq-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ds42mb100tsq.step/ds42mb100tsq.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Texas Instruments datasheet (24 pp, sha256
6ec4383827739115, retrieved 2026-10-31, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).