component
DS18B20U-HXY
Public Made by Adomby adom
HXY MOSFET Temperature Sensors, MSOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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DS18B20U-HXY
HXY MOSFET · Temperature Sensors · MSOP-8
DS18B20U-HXY from HXY MOSFET, in a MSOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | DQ | bidirectional | Open-drain one-wire bus communication port that needs an external pull-up (about 5 kΩ per the datasheet) and also supplies the device in parasitic power mode. |
| 2 | NC | unconnected | No internal connection; leave floating (悬空). |
| 3 | NC | unconnected | No internal connection; leave floating (悬空). |
| 4 | GND | power_in | Ground reference for the device. |
| 5 | NC | unconnected | No internal connection; leave floating (悬空). |
| 6 | NC | unconnected | No internal connection; leave floating (悬空). |
| 7 | NC | unconnected | No internal connection; leave floating (悬空). |
| 8 | VDD | power_in | Supply pin, 2.7 V to 5.5 V per the DC characteristics; must be tied to GND when the device runs in parasitic power mode. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | MSOP-8 |
| Category | Sensors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Voltage on any pin to ground | -0.5 | 6 | V | 3 | |||
| Operating temperature range | -55 | 125 | ℃ | 3 | |||
| Storage temperature range | -65 | 150 | ℃ | 3 | |||
| Operating supply voltage (local power) | VDD | 2.7 | 5.5 | V | 本地供电 | 3 | |
| Pull-up voltage (parasitic power) | VPU | 2.7 | 5.5 | V | 寄生供电 | 3 | |
| Pull-up voltage (local power) | VPU | 2.7 | V | 本地供电; 最大值印为VDD | 3 | ||
| Temperature error | tERR | -0.5 | 0.5 | ℃ | -10℃~+85℃ | 3 | |
| Temperature error | tERR | -2 | 2 | ℃ | -55℃~+125℃ | 3 | |
| Input logic low voltage | VIL | -0.3 | 0.8 | V | 注4：端口灌电流4mA时 | 3 | |
| Input logic high voltage (local power) | VIH | 2.2 | 5.5 | V | 本地供电; 注6：端口拉电流1mA时; 最大值印为5.5或VDD+0.3 | 3 | |
| Input logic high voltage (parasitic power) | VIH | 3 | V | 寄生供电; 注6：端口拉电流1mA时 | 3 | ||
| Low-level sink current | IL | 4 | mA | VI/O=0.4V | 3 | ||
| Standby current | IDDS | 750 | 1000 | nA | 注7：温度低于+70℃; 注8：DQ在GND |
3 | |
| Operating current | IDD | 1 | 1.5 | mA | VDD=5V; 注9：温度转换及写EEPROM时 | 3 | |
| DQ port input current | IDQ | 5 | μA | 注10：DQ端口为高（高阻状态） | 3 | ||
| Temperature drift | -0.2 | 0.2 | ℃ | 注11：125℃, VDD=5.5V, 测试1000小时 | 3 | ||
| EEPROM write time | tWR | 10 | ms | 4 | |||
| EEPROM write cycles | NEEWR | 50 | k次 | -55℃~+55℃ | 4 | ||
| EEPROM data retention | tEEDR | 10 | 年 | -55℃~+55℃ | 4 | ||
| Temperature conversion time, 9-bit | tCONV | 93.75 | ms | 9位分辨率 | 4 | ||
| Temperature conversion time, 10-bit | tCONV | 187.5 | ms | 10位分辨率 | 4 | ||
| Temperature conversion time, 11-bit | tCONV | 375 | ms | 11位分辨率 | 4 | ||
| Temperature conversion time, 12-bit | tCONV | 750 | ms | 12位分辨率 | 4 | ||
| Strong pull-up time | tSPON | 10 | μs | 发出温度转换指令 | 4 | ||
| Time slot | tSLOT | 60 | 120 | μs | 注12：时序见图1-2 | 4 | |
| Recovery time | tREC | 1 | μs | 注12：时序见图1-2 | 4 | ||
| Write-0 low time | tLOW0 | 60 | 120 | μs | 注12：时序见图1-2 | 4 | |
| Write-1 low time | tLOW1 | 1 | 15 | μs | 注12：时序见图1-2 | 4 | |
| Read data valid time | tRDV | 15 | μs | 注12：时序见图1-2 | 4 | ||
| Reset high time | tRSTH | 480 | μs | 注12：时序见图1-2 | 4 | ||
| Reset low time | tRSTL | 480 | μs | 注12,13：时序见图1-2 | 4 | ||
| Presence detect high time | tPDHIGH | 15 | 60 | μs | 注12：时序见图1-2 | 4 | |
| Presence detect low time | tPDLOW | 60 | 240 | μs | 注12：时序见图1-2 | 4 | |
| Input/output capacitance | CIN/OUT | 25 | pF | 25℃ (as printed: 25) | 4 |
CAD (KiCad official)
- Symbol:
DS18B20U-HXY - Footprint:
Package_SO:MSOP-8_3x3mm_P0.65mm - 3D model: MSOP-8 (KiCad packages3D, STEP)
- 3D model files:
ds18b20u-hxy-etched.step/ds18b20u-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ds18b20u-hxy.step/ds18b20u-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (24 pp, sha256
0c24afa517eb97f9, retrieved 2026-10-18, tier: lcsc) - Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# DS18B20U-HXY
**HXY MOSFET** · Temperature Sensors · MSOP-8
DS18B20U-HXY from HXY MOSFET, in a MSOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | DQ | bidirectional | Open-drain one-wire bus communication port that needs an external pull-up (about 5 kΩ per the datasheet) and also supplies the device in parasitic power mode. |
| 2 | NC | unconnected | No internal connection; leave floating (悬空). |
| 3 | NC | unconnected | No internal connection; leave floating (悬空). |
| 4 | GND | power_in | Ground reference for the device. |
| 5 | NC | unconnected | No internal connection; leave floating (悬空). |
| 6 | NC | unconnected | No internal connection; leave floating (悬空). |
| 7 | NC | unconnected | No internal connection; leave floating (悬空). |
| 8 | VDD | power_in | Supply pin, 2.7 V to 5.5 V per the DC characteristics; must be tied to GND when the device runs in parasitic power mode. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | MSOP-8 |
| Category | Sensors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Voltage on any pin to ground | | -0.5 | | 6 | V | | 3 |
| Operating temperature range | | -55 | | 125 | ℃ | | 3 |
| Storage temperature range | | -65 | | 150 | ℃ | | 3 |
| Operating supply voltage (local power) | VDD | 2.7 | | 5.5 | V | 本地供电 | 3 |
| Pull-up voltage (parasitic power) | VPU | 2.7 | | 5.5 | V | 寄生供电 | 3 |
| Pull-up voltage (local power) | VPU | 2.7 | | | V | 本地供电; 最大值印为VDD | 3 |
| Temperature error | tERR | -0.5 | | 0.5 | ℃ | -10℃~+85℃ | 3 |
| Temperature error | tERR | -2 | | 2 | ℃ | -55℃~+125℃ | 3 |
| Input logic low voltage | VIL | -0.3 | | 0.8 | V | 注4：端口灌电流4mA时 | 3 |
| Input logic high voltage (local power) | VIH | 2.2 | | 5.5 | V | 本地供电; 注6：端口拉电流1mA时; 最大值印为5.5或VDD+0.3 | 3 |
| Input logic high voltage (parasitic power) | VIH | 3 | | | V | 寄生供电; 注6：端口拉电流1mA时 | 3 |
| Low-level sink current | IL | 4 | | | mA | VI/O=0.4V | 3 |
| Standby current | IDDS | | 750 | 1000 | nA | 注7：温度低于+70℃; 注8：DQ在GND~GND+0.3V或VDD-0.3V~VDD | 3 |
| Operating current | IDD | | 1 | 1.5 | mA | VDD=5V; 注9：温度转换及写EEPROM时 | 3 |
| DQ port input current | IDQ | | | 5 | μA | 注10：DQ端口为高（高阻状态） | 3 |
| Temperature drift | | -0.2 | | 0.2 | ℃ | 注11：125℃, VDD=5.5V, 测试1000小时 | 3 |
| EEPROM write time | tWR | | | 10 | ms | | 4 |
| EEPROM write cycles | NEEWR | 50 | | | k次 | -55℃~+55℃ | 4 |
| EEPROM data retention | tEEDR | 10 | | | 年 | -55℃~+55℃ | 4 |
| Temperature conversion time, 9-bit | tCONV | | | 93.75 | ms | 9位分辨率 | 4 |
| Temperature conversion time, 10-bit | tCONV | | | 187.5 | ms | 10位分辨率 | 4 |
| Temperature conversion time, 11-bit | tCONV | | | 375 | ms | 11位分辨率 | 4 |
| Temperature conversion time, 12-bit | tCONV | | | 750 | ms | 12位分辨率 | 4 |
| Strong pull-up time | tSPON | | | 10 | μs | 发出温度转换指令 | 4 |
| Time slot | tSLOT | 60 | | 120 | μs | 注12：时序见图1-2 | 4 |
| Recovery time | tREC | 1 | | | μs | 注12：时序见图1-2 | 4 |
| Write-0 low time | tLOW0 | 60 | | 120 | μs | 注12：时序见图1-2 | 4 |
| Write-1 low time | tLOW1 | 1 | | 15 | μs | 注12：时序见图1-2 | 4 |
| Read data valid time | tRDV | | | 15 | μs | 注12：时序见图1-2 | 4 |
| Reset high time | tRSTH | 480 | | | μs | 注12：时序见图1-2 | 4 |
| Reset low time | tRSTL | 480 | | | μs | 注12,13：时序见图1-2 | 4 |
| Presence detect high time | tPDHIGH | 15 | | 60 | μs | 注12：时序见图1-2 | 4 |
| Presence detect low time | tPDLOW | 60 | | 240 | μs | 注12：时序见图1-2 | 4 |
| Input/output capacitance | CIN/OUT | | 25 | | pF | 25℃ (as printed: 25) | 4 |
## CAD (KiCad official)
- Symbol: `DS18B20U-HXY`
- Footprint: `Package_SO:MSOP-8_3x3mm_P0.65mm`
- 3D model: MSOP-8 (KiCad packages3D, STEP)
- 3D model files: `ds18b20u-hxy-etched.step` / `ds18b20u-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ds18b20u-hxy.step` / `ds18b20u-hxy.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8756869873961963520) (24 pp, sha256 `0c24afa517eb97f9`, retrieved 2026-10-18, tier: lcsc)
- **Datasheet language:** Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ds18b20u-hxy-datasheet.pdf)