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DS16W
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Shandong Jingdao Microelectronics Schottky Barrier Diodes (SBD), SOD-123F. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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DS16W
Shandong Jingdao Microelectronics · Schottky Barrier Diodes (SBD) · SOD-123F
DS16W from Shandong Jingdao Microelectronics, in a SOD-123F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Cathode | passive | Cathode terminal of the DS16W Schottky barrier rectifier, shown as pin 1 in the PINNING table (top view) for the SOD-123FL outline. |
| 2 | Anode | passive | Anode terminal of the DS16W Schottky barrier rectifier, shown as pin 2 in the PINNING table (top view) for the SOD-123FL outline. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Shandong Jingdao Microelectronics |
| Package | SOD-123F |
| Category | Diodes |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Maximum Repetitive Peak Reverse Voltage | VRRM | 60 | V | DS16W column | 1 | ||
| Maximum RMS Voltage | VRMS | 42 | V | DS16W column | 1 | ||
| Maximum DC Blocking Voltage | VDC | 60 | V | DS16W column | 1 | ||
| Maximum Average Forward Rectified Current | IF(AV) | 1 | A | 1 | |||
| Peak Forward Surge Current | IFSM | 30 | A | 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) | 1 | ||
| Max Instantaneous Forward Voltage | VF | 0.7 | V | at 1 A | 1 | ||
| Operating Junction Temperature Range | Tj | -55 | 125 | °C | 1 | ||
| Storage Temperature Range | Tstg | -55 | 150 | °C | 1 |
CAD (KiCad official)
- Symbol:
DS16W - Footprint:
Diode_SMD:D_SOD-123F - 3D model: SOD-123F (KiCad packages3D, STEP)
- 3D model files:
ds16w-etched.step/ds16w-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ds16w.step/ds16w.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Shandong Jingdao Microelectronics datasheet (3 pp, sha256
d9347f377ea077a3, retrieved 2026-10-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# DS16W
**Shandong Jingdao Microelectronics** · Schottky Barrier Diodes (SBD) · SOD-123F
DS16W from Shandong Jingdao Microelectronics, in a SOD-123F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Cathode | passive | Cathode terminal of the DS16W Schottky barrier rectifier, shown as pin 1 in the PINNING table (top view) for the SOD-123FL outline. |
| 2 | Anode | passive | Anode terminal of the DS16W Schottky barrier rectifier, shown as pin 2 in the PINNING table (top view) for the SOD-123FL outline. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Shandong Jingdao Microelectronics |
| Package | SOD-123F |
| Category | Diodes |
| Pins | 2 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Maximum Repetitive Peak Reverse Voltage | VRRM | | | 60 | V | DS16W column | 1 |
| Maximum RMS Voltage | VRMS | | | 42 | V | DS16W column | 1 |
| Maximum DC Blocking Voltage | VDC | | | 60 | V | DS16W column | 1 |
| Maximum Average Forward Rectified Current | IF(AV) | | | 1 | A | | 1 |
| Peak Forward Surge Current | IFSM | | | 30 | A | 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) | 1 |
| Max Instantaneous Forward Voltage | VF | | | 0.7 | V | at 1 A | 1 |
| Operating Junction Temperature Range | Tj | -55 | | 125 | °C | | 1 |
| Storage Temperature Range | Tstg | -55 | | 150 | °C | | 1 |
## CAD (KiCad official)
- Symbol: `DS16W`
- Footprint: `Diode_SMD:D_SOD-123F`
- 3D model: SOD-123F (KiCad packages3D, STEP)
- 3D model files: `ds16w-etched.step` / `ds16w-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ds16w.step` / `ds16w.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Shandong Jingdao Microelectronics datasheet](docs/ds16w-datasheet.pdf) (3 pp, sha256 `d9347f377ea077a3`, retrieved 2026-10-21, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ds16w-datasheet.pdf)