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DS16EV5110ASQE

Texas Instruments · Video Interface ICs · WQFN-48-EP(7x7)

DS16EV5110ASQE from Texas Instruments, in a WQFN-48-EP(7x7). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 C_IN- input Inverting TMDS clock input (CML) to the equalizer, with an on-chip 50Ω terminating resistor to VDD.
2 C_IN+ input Non-inverting TMDS clock input (CML) to the equalizer, with an on-chip 50Ω terminating resistor to VDD.
3 VDD power_in Power supply pin, tied to the VDD plane through a low-inductance path with a 0.1µF bypass capacitor to GND.
4 D_IN0- input Inverting TMDS data channel 0 input (CML) with an on-chip 50Ω terminating resistor to VDD.
5 D_IN0+ input Non-inverting TMDS data channel 0 input (CML) with an on-chip 50Ω terminating resistor to VDD.
6 VDD power_in Power supply pin, tied to the VDD plane through a low-inductance path with a 0.1µF bypass capacitor to GND.
7 VDD power_in Power supply pin, tied to the VDD plane through a low-inductance path with a 0.1µF bypass capacitor to GND.
8 D_IN1- input Inverting TMDS data channel 1 input (CML) with an on-chip 50Ω terminating resistor to VDD.
9 D_IN1+ input Non-inverting TMDS data channel 1 input (CML) with an on-chip 50Ω terminating resistor to VDD.
10 VDD power_in Power supply pin, tied to the VDD plane through a low-inductance path with a 0.1µF bypass capacitor to GND.
11 D_IN2- input Inverting TMDS data channel 2 input (CML) with an on-chip 50Ω terminating resistor to VDD.
12 D_IN2+ input Non-inverting TMDS data channel 2 input (CML) with an on-chip 50Ω terminating resistor to VDD.
13 VDD power_in Power supply pin, tied to the VDD plane through a low-inductance path with a 0.1µF bypass capacitor to GND.
14 BST_1 input LVCMOS equalizer boost select bit 1 (BST_[0:2] select boost level, internally pulled Low).
15 VDD power_in Power supply pin, tied to the VDD plane through a low-inductance path with a 0.1µF bypass capacitor to GND.
16 CS input SMBus chip select: High enables the SMBus register, Low disables it; internally pulled Low and gated with SDC.
17 SDC input SMBus clock input, 3.3V LVCMOS (not 5V tolerant), internally pulled High to 3.3V with a High-Z pull-up.
18 SDA bidirectional SMBus data input/output, 3.3V LVCMOS (not 5V tolerant), internally pulled High to 3.3V with a High-Z pull-up.
19 Reserv unconnected Reserved; do not connect.
20 Reserv unconnected Reserved; do not connect.
21 FEB input Force External Boost: High selects boost control by BST_[0:2] pins, Low selects SMBus control; internally pulled High.
22 GND power_in Ground reference, tied to a solid ground plane through a low-impedance path.
23 BST_0 input LVCMOS equalizer boost select bit 0 (BST_[0:2] select boost level, internally pulled Low).
24 GND power_in Ground reference, tied to a solid ground plane through a low-impedance path.
25 D_OUT2+ output Non-inverting TMDS data channel 2 output (CML, open collector).
26 D_OUT2- output Inverting TMDS data channel 2 output (CML, open collector).
27 GND power_in Ground reference, tied to a solid ground plane through a low-impedance path.
28 D_OUT1+ output Non-inverting TMDS data channel 1 output (CML, open collector).
29 D_OUT1- output Inverting TMDS data channel 1 output (CML, open collector).
30 GND power_in Ground reference, tied to a solid ground plane through a low-impedance path.
31 GND power_in Ground reference, tied to a solid ground plane through a low-impedance path.
32 D_OUT0+ output Non-inverting TMDS data channel 0 output (CML, open collector).
33 D_OUT0- output Inverting TMDS data channel 0 output (CML, open collector).
34 GND power_in Ground reference, tied to a solid ground plane through a low-impedance path.
35 C_OUT+ output Non-inverting TMDS clock output (CML, open collector).
36 C_OUT- output Inverting TMDS clock output (CML, open collector).
37 BST_2 input LVCMOS equalizer boost select bit 2 (BST_[0:2] select boost level, internally pulled Low).
38 Reserv unconnected Reserved; do not connect.
39 Reserv unconnected Reserved; do not connect.
40 Reserv unconnected Reserved; do not connect.
41 Reserv unconnected Reserved; do not connect.
42 Reserv unconnected Reserved; do not connect.
43 Reserv unconnected Reserved; do not connect.
44 EN input Enable input, global to all channels: High selects normal operation, Low selects standby mode; internally pulled High.
45 SD output LVCMOS clock channel signal detect output, High when a signal is detected.
46 VDD power_in Power supply pin, tied to the VDD plane through a low-inductance path with a 0.1µF bypass capacitor to GND.
47 Reserv unconnected Reserved; do not connect.
48 Reserv unconnected Reserved; do not connect.
49 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Texas Instruments
Package WQFN-48-EP(7x7)
Category Interface
Pins 49

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Supply Voltage (VDD to GND) 3 3.3 3.6 V 4
Ambient Temperature -40 25 85 °C 4
Supply Voltage (VDD) -0.5 4 V 4
LVCMOS Input Voltage -0.5 4 V 4
LVCMOS Output Voltage -0.5 4 V 4
CML Input/Output Voltage -0.5 4 V 4
Junction Temperature 150 °C 4
Storage Temperature -65 150 °C 4
Lead Temperature (Soldering, 5 sec.) 260 °C Soldering, 5 sec. 4
ESD Rating 6 kV HBM, 1.5 kΩ, 100 pF 4
Thermal Resistance θJA 30 °C/W No Airflow 4
High Level Input Leakage Current (pull-up pins) IIH-PU -10 10 µA LVCMOS pins with internal pull-up resistors 4
High Level Input Leakage Current (pull-down pins) IIH-PD 80 105 µA LVCMOS pins with internal pull-down resistors 4
Low Level Input Leakage Current (pull-up pins) IIL-PU -20 -10 µA LVCMOS pins with internal pull-up resistors 4
Low Level Input Leakage Current (pull-down pins) IIL-PD -10 10 µA LVCMOS pins with internal pull-down resistors 4
High Level Input Voltage VIH 2 V 4
Low Level Input Voltage VIL 0 0.8 V 4
High Level Output Voltage VOH 2.4 V SD Pin, IOH = -3mA 4
Low Level Output Voltage VOL 0.4 V SD Pin, IOL = 3mA 4
Power Dissipation PD 475 700 mW EN = High, Device Enabled 4
Input Voltage Swing (Launch Amplitude) VTX 800 1200 mVP-P Measured differentially at TPA (Figure 2) 5
Input Resistance RIN 45 50 55 Ω IN+ to VDD and IN− to VDD 5
Output Voltage Swing VO 800 1200 mVP-P Measured differentially with OUT+ and OUT− terminated by 50Ω to VDD 5
Output Leakage Current IOFF -1 1 µA VOUT = 3.6V, VDD = open or 0V 5
Transition Time tR, tF 75 240 ps 20% to 80% of differential output voltage, measured within 1" from output pins. 5
Total Jitter at 1.65 Gbps TJ1 0.13 0.17 UIP-P 20m 28 AWG STP DVI Cable, EQ Setting 0x04, PRBS7 5
Clock Frequency FCLK 25 225 MHz Clock Path 5
Bit Rate BR 0.25 2.25 Gbps Data Path 5
Data, Clock Input High Voltage (SMBus) VIH 2.8 V 6
Nominal Bus Voltage VDD 3 3.6 V 6
Input Leakage per bus segment ILEAK-Bus -200 200 µA per bus segment 6
Bus Operating Frequency FSMB 10 100 kHz 6
Detect Clock Low Timeout TTIMEOUT 25 35 ms 6
Clock High Period THIGH 4 50 µs 6

CAD (KiCad official)

  • Symbol: DS16EV5110ASQE
  • Footprint: Package_DFN_QFN:QFN-48-1EP_7x7mm_P0.5mm_EP5.15x5.15mm
  • 3D model: WQFN-48-EP(7x7) (KiCad packages3D, STEP)
  • 3D model files: ds16ev5110asqe-etched.step / ds16ev5110asqe-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ds16ev5110asqe.step / ds16ev5110asqe.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Texas Instruments datasheet (25 pp, sha256 8197f99e1a4a9be5, retrieved 2026-11-10, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF