component
DRV8434SRGER
Public Made by Adomby adom
Texas Instruments Stepper Motor Driver, VQFN-24(4x4). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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DRV8434SRGER
Texas Instruments · Stepper Motor Driver · VQFN-24(4x4)
DRV8434SRGER from Texas Instruments, in a VQFN-24(4x4). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | VM | power_in | Motor supply pin, operating range 4.5 V to 48 V, bypassed to PGND with a 0.01 µF ceramic capacitor rated for VM placed close to the pin and a bulk capacitor rated for VM. |
| 2 | PGND | power_in | Power ground pin, connect to system ground. |
| 3 | AOUT1 | output | Winding A output, connect to a stepper motor winding; continuous phase-node voltage is limited to -1 V to VM + 1 V. |
| 4 | AOUT2 | output | Winding A output, connect to a stepper motor winding; continuous phase-node voltage is limited to -1 V to VM + 1 V. |
| 5 | BOUT2 | output | Winding B output, connect to a stepper motor winding; continuous phase-node voltage is limited to -1 V to VM + 1 V. |
| 6 | BOUT1 | output | Winding B output, connect to a stepper motor winding; continuous phase-node voltage is limited to -1 V to VM + 1 V. |
| 7 | PGND | power_in | Power ground pin, connect to system ground. |
| 8 | VM | power_in | Motor supply pin, operating range 4.5 V to 48 V, bypassed to PGND with a 0.01 µF ceramic capacitor rated for VM placed close to the pin and a bulk capacitor rated for VM. |
| 9 | GND | power_in | Device ground pin, connect to system ground. |
| 10 | DVDD | power_out | Logic supply from the internal linear regulator (nominal 5 V, up to 2 mA load), bypassed to GND with a 0.47 µF to 1 µF X7R 6.3 V or 10 V ceramic capacitor. |
| 11 | nFAULT | output | Open-drain fault indicator, pulled low on a fault and requiring an external pull-up to 5 V, 3.3 V or 1.8 V; open-drain output current is limited to 10 mA. |
| 12 | VREF | power_in | Current-setting reference input, maximum 3.3 V; can be driven from DVDD through a resistor divider. |
| 13 | nSCS | input | Active-low serial chip select with internal pull-up to DVDD. |
| 14 | VSDO | power_in | Supply pin for the SDO output, connected to an external voltage chosen to match the required logic level. |
| 15 | SDO | output | Push-pull serial data output, shifting data out on the rising edge of SCLK. |
| 16 | SDI | input | Serial data input, captured on the falling edge of SCLK. |
| 17 | SCLK | input | Serial clock input; data is shifted out and captured on the rising and falling edges of this pin. |
| 18 | STEP | input | Step input, each rising edge advances the indexer by one step; internal pull-down resistor. |
| 19 | DIR | input | Direction input whose logic level sets the step direction; internal pull-down resistor. |
| 20 | ENABLE | input | Logic low disables the outputs (high-impedance), logic high enables them; internal pull-up to DVDD. |
| 21 | nSLEEP | input | Sleep mode input: logic high enables the device, logic low enters low-power sleep; internal pull-down, and a low pulse clears latched faults. |
| 22 | CPL | passive | Charge pump negative switching node; connect a low-ESR X7R 0.022 µF ceramic capacitor rated for VM between CPH and CPL. |
| 23 | CPH | passive | Charge pump switch node; connect a low-ESR X7R 0.022 µF ceramic capacitor rated for VM between CPH and CPL. |
| 24 | VCP | power_out | Charge pump output, connect to VM through a X7R 0.22 µF 16 V ceramic capacitor. |
| 25 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | VQFN-24(4x4) |
| Category | Motor Driver ICs |
| Pins | 25 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Supply voltage VM for normal DC operation | VVM | 4.5 | 48 | V | 5 | ||
| Logic-level input voltage | VI | 0 | 5.5 | V | 5 | ||
| VREF voltage | VVREF | 0.05 | 3.3 | V | 5 | ||
| Applied STEP signal frequency | fSTEP | 0 | 500 | kHz | 5 | ||
| Motor full-scale current (xOUTx) | IFS | 0 | 2.5 | A | 5 | ||
| Motor RMS current (xOUTx) | Irms | 0 | 1.8 | A | 5 | ||
| Operating ambient temperature | TA | -40 | 125 | °C | 5 | ||
| Operating junction temperature | TJ | -40 | 150 | °C | 5 | ||
| VM operating supply current | IVM | 5 | 6.5 | mA | ENABLE = 1,nSLEEP = 1,无电机负载 | 6 | |
| VM sleep-mode supply current | IVMQ | 2 | 4 | µA | nSLEEP = 0 | 6 | |
| Internal regulator voltage VDVDD (6V < VVM < 48V) | VDVDD | 4.75 | 5 | 5.25 | V | 无外部负载,6V < VVM < 48V | 6 |
| Internal regulator voltage VDVDD (VVM = 4.5V) | VDVDD | 4.2 | 4.35 | V | 无外部负载,VVM = 4.5V | 6 | |
| Input logic-low voltage | VIL | 0 | 0.6 | V | 6 | ||
| Input logic-high voltage | VIH | 1.5 | 5.5 | V | 6 | ||
| Input logic-low current (nSCS) | IIL1 | 8 | 12 | µA | VIN = 0V | 6 | |
| Input logic-low current (other pins) | IIL | -1 | 1 | µA | VIN = 0V | 6 | |
| SDO internal pull-down resistance | RPD,SDO | 30 | 60 | Ω | 5 mA 负载,以 GND 为基准 | 6 | |
| SDO internal pull-up resistance | RPU,SDO | 30 | 60 | Ω | 5mA 负载,以 VSDO 为基准 | 6 | |
| SDO leakage current | ISDO | -1 | 1 | µA | SDO = VSDO 和 0V | 6 | |
| nFAULT output high-level leakage current | IOH | -1 | 1 | µA | 6 | ||
| High-side FET on-resistance (25°C) | RDS(ON) | 165 | 200 | mΩ | TJ = 25°C、IO = -1A | 6 | |
| High-side FET on-resistance (125°C) | RDS(ON) | 250 | 300 | mΩ | TJ = 125°C、IO = -1A | 6 | |
| High-side FET on-resistance (150°C) | RDS(ON) | 280 | 350 | mΩ | TJ = 150°C、IO = -1A | 6 | |
| Low-side FET on-resistance (25°C) | RDS(ON) | 165 | 200 | mΩ | TJ = 25°C、IO = 1A | 6 | |
| Low-side FET on-resistance (125°C) | RDS(ON) | 250 | 300 | mΩ | TJ = 125°C、IO = 1A | 6 | |
| Low-side FET on-resistance (150°C) | RDS(ON) | 280 | 350 | mΩ | TJ = 150°C、IO = 1A | 6 | |
| Wake-up time | tWAKE | 0.8 | 1.2 | ms | nSLEEP = 1 至输出转换 | 6 | |
| Turn-on time | tON | 0.8 | 1.2 | ms | VM > UVLO 至输出转换 | 6 | |
| nSLEEP reset pulse (clears faults) | tRESET | 20 | 40 | µs | nSLEEP 低电平至清除故障 | 6 | |
| Transconductance gain | KV | 1.254 | 1.32 | 1.386 | V/A | VREF = 3.3V | 6 |
| Current trip accuracy (0.25A < IO < 0.5A) | ΔITRIP | -12 | 12 | % | 0.25A < IO < 0.5A | 7 | |
| Current trip accuracy (0.5A < IO < 1A) | ΔITRIP | -6 | 6 | % | 0.5A < IO < 1A | 7 | |
| Current trip accuracy (1A < IO < 2.5A) | ΔITRIP | -4 | 4 | % | 1A < IO < 2.5A | 7 | |
| AOUT and BOUT current matching | IO,CH | -2.5 | 2.5 | % | IO = 2.5A | 7 | |
| VM UVLO lock threshold (falling) | VUVLO | 4.1 | 4.25 | 4.35 | V | VM 下降,UVLO 下降 | 7 |
| VM UVLO lock threshold (rising) | VUVLO | 4.2 | 4.35 | 4.45 | V | VM 上升,UVLO 上升 | 7 |
| Overtemperature warning threshold | TOTW | 135 | 150 | 165 | °C | 内核温度 TJ | 7 |
| Thermal shutdown threshold | TOTSD | 150 | 165 | 180 | °C | 内核温度 TJ | 7 |
| Charge pump enable time (ENABLE 0/1 to output transition) | tEN | 5 | µs | ENABLE = 0/1 至输出转换 | 6 | ||
| Charge pump switching frequency | f(VCP) | 360 | kHz | VVM > UVLO;nSLEEP = 1 | 6 | ||
| Input logic hysteresis | VHYS | 150 | mV | 6 | |||
| nFAULT output low-level voltage | VOL | 0.5 | V | IO = 5mA | 6 | ||
| VREF leakage current | IVREF | 8.25 | µA | VREF = 3.3V | 7 | ||
| VM UVLO reset threshold | VRST | 3.9 | V | VM 下降,器件复位,SPI 通信 | 7 | ||
| Overcurrent protection threshold | IOCP | 4 | A | 流经任何 FET 的电流 | 7 | ||
| Overcurrent deglitch time | tOCP | 2 | µs | 7 | |||
| Overcurrent retry time | tRETRY | 4 | ms | OCP_MODE = 1b | 7 | ||
| Open-load detection time | tOL | 50 | ms | EN_OL = 1b | 7 | ||
| Open-load current threshold | IOL | 75 | mA | EN_OL = 1b | 7 | ||
| UVLO hysteresis (rising to falling threshold) | VUVLO,HYS | 100 | mV | 上升至下降阈值 | 7 | ||
| Output slew rate | tSR | 240 | V/µs | VVM = 24V、IO = 1A,在 10% 至 90% 之间 | 6 | ||
| Sleep-mode entry time | tSLEEP | 120 | µs | nSLEEP = 0 至睡眠模式 | 6 | ||
| Thermal shutdown hysteresis | THYS_OTSD | 20 | °C | 内核温度 TJ | 7 | ||
| Overtemperature warning hysteresis | THYS_OTW | 20 | °C | 内核温度 TJ | 7 | ||
| Junction-to-ambient thermal resistance (RGE 24-pin) | RθJA | 39 | °C/W | 5 | |||
| Junction-to-case (top) thermal resistance (RGE 24-pin) | RθJC(top) | 28.9 | °C/W | 5 | |||
| Junction-to-board thermal resistance (RGE 24-pin) | RθJB | 16 | °C/W | 5 | |||
| Junction-to-top characterization parameter (RGE 24-pin) | ψJT | 0.4 | °C/W | 5 | |||
| Junction-to-board characterization parameter (RGE 24-pin) | ψJB | 15.9 | °C/W | 5 | |||
| Junction-to-case (bottom) thermal resistance (RGE 24-pin) | RθJC(bot) | 3.4 | °C/W | 5 |
CAD (KiCad official)
- Symbol:
DRV8434SRGER - Footprint:
Package_DFN_QFN:QFN-24-1EP_4x4mm_P0.5mm_EP2.6x2.6mm - 3D model: VQFN-24(4x4) (KiCad packages3D, STEP)
- 3D model files:
drv8434srger-etched.step/drv8434srger-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);drv8434srger.step/drv8434srger.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Texas Instruments datasheet (72 pp, sha256
25f2e8540e04853a, retrieved 2026-10-21, tier: lcsc) - Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).