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DRV8421ADGQR

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TEXAS INSTRUMENTS Global Sourcing Parts, HVSSOP-10. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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DRV8421ADGQR

TEXAS INSTRUMENTS · Global Sourcing Parts · HVSSOP-10

DRV8421ADGQR from TEXAS INSTRUMENTS, in a HVSSOP-10. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 VM power_in Motor power supply (4 to 18 V recommended, 20 V absolute max); bypass to GND with a 0.1 µF and a 10 µF (minimum) ceramic capacitor rated for VM.
2 IN1 input Input 1 controls OUT1 (4-wire input, independent half-bridge control; control pin voltage -0.3 to 7 V).
3 IN2 input Input 2 controls OUT2 (4-wire input, independent half-bridge control; control pin voltage -0.3 to 7 V).
4 IN3 input Input 3 controls OUT3 (4-wire input, independent half-bridge control; control pin voltage -0.3 to 7 V).
5 IN4 input Input 4 controls OUT4 (4-wire input, independent half-bridge control; control pin voltage -0.3 to 7 V).
6 GND power_in Device ground; connect to system ground.
7 OUT4 output Output 4 half-bridge output controlled by IN4, with internal pulldown.
8 OUT3 output Output 3 half-bridge output controlled by IN3, with internal pulldown.
9 OUT2 output Output 2 half-bridge output controlled by IN2, with internal pulldown.
10 OUT1 output Output 1 half-bridge output controlled by IN1, with internal pulldown.
11 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer TEXAS INSTRUMENTS
Package HVSSOP-10
Category Global Sourcing Parts
Pins 11

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Power supply voltage (VM) VM -0.3 20 V 6
Power supply voltage ramp rate (VM) 0 2 V/µs 6
Control pin voltage (IN1-IN4, EN, nFAULT) -0.3 7 V 6
Continuous phase node pin voltage (OUT1-OUT4) -0.3 V max printed as VVM + 0.6 V 6
Operating junction temperature TJ -40 150 °C 6
Storage temperature Tstg -65 150 °C 6
ESD HBM V(ESD) -4000 4000 V HBM, ANSI/ESDA/JEDEC JS-001, all pins 6
ESD CDM V(ESD) -1500 1500 V CDM, JESD22-C101, all pins 6
Power supply voltage range VVM 4 18 V 6
Applied input signal frequency fPWM 0 250 kHz 6
Motor rms current per H-bridge Irms 0 2 A 6
Operating ambient temperature TA -40 85 °C 6
VM operating voltage VVM 4 18 V TA = 25°C 7
VM operating supply current IVM 1.2 1.35 1.5 mA VVM = 12 V, excluding winding current 7
VM sleep mode supply current (2-wire input only) IVMQ 0.5 1.2 3 µA VVM = 12V, EN = 0 (2-wire input only) 7
Input logic low voltage VIL 0 0.7 V 7
Input logic high voltage VIH 1.6 5.5 V 7
Input logic low current IIL -1 1 µA VI = 0 V 7
Input logic high current IIH 1 30 µA VI = 5 V 7
Output logic high leakage IOH -1 1 µA VO = 3.3 V 7
Off-state leakage current IOFF -1 1 µA VVM = 5 V, TJ = 25°C (2-wire input only) 7
Thermal shutdown temperature TTSD 150 160 180 °C Die temperature TJ 7
Delay time, xIN1 to xOUT1 t1 100 600 ns 8
Delay time, xIN2 to xOUT1 t2 100 600 ns 8
Delay time, xIN1 to xOUT2 t3 100 600 ns 8
Delay time, xIN2 to xOUT2 t4 100 600 ns 8
Output rise time tR 50 150 ns 8
Output fall time tF 50 150 ns 8
Junction-to-ambient thermal resistance RθJA 62.5 °C/W DGQ (HVSSOP), 10 pins 6
Junction-to-case (top) thermal resistance RθJC(top) 80.5 °C/W DGQ (HVSSOP) 6
Junction-to-board thermal resistance RθJB 28.5 °C/W DGQ (HVSSOP) 6
Junction-to-top characterization parameter ΨJT 6.7 °C/W DGQ (HVSSOP) 6
Junction-to-board characterization parameter ΨJB 28.4 °C/W DGQ (HVSSOP) 6
Junction-to-case (bottom) thermal resistance RθJC(bot) 7.8 °C/W DGQ (HVSSOP) 6
Sleep time (2-wire input only) tSLEEP 1 ms EN = 1 to sleep mode (2-wire input only) 7
Wake time (2-wire input only) tWAKE 1 ms EN = 0 to output transition (2-wire input only) 7
Power-on time tON 1 ms VVM > VUVLO rising to output transition 7
Input logic hysteresis VHYS 100 mV 7
Output logic low voltage VOL 0.5 V IO = 5 mA 7
High-side FET on resistance 25°C RDS(ON) 550 mΩ VVM = 12 V, IO = 0.5 A, TJ = 25°C 7
High-side FET on resistance 85°C RDS(ON) 660 mΩ VVM = 12 V, IO = 0.5 A, TJ = 85°C 7
Low-side FET on resistance 25°C RDS(ON) 350 mΩ VVM = 12 V, IO = 0.5 A, TJ = 25°C 7
Low-side FET on resistance 85°C RDS(ON) 420 mΩ VVM = 12 V, IO = 0.5 A, TJ = 85°C 7
VM undervoltage lockout falling VUVLO 2.9 V VVM falling; UVLO report 7
VM undervoltage lockout rising VUVLO 3 V VVM rising; UVLO recovery 7
Overcurrent protection trip level IOCP 2 A 7
Thermal shutdown hysteresis THYS 35 °C Die temperature TJ 7

CAD (KiCad official)

  • Symbol: DRV8421ADGQR
  • Footprint: Package_SO:HVSSOP-10-1EP_3x3mm_P0.5mm_EP1.83x1.89mm
  • 3D model: HVSSOP-10, generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 1.0 mm nominal HVSSOP height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
  • 3D model files: drv8421adgqr-etched.step / drv8421adgqr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); drv8421adgqr.step / drv8421adgqr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: TEXAS INSTRUMENTS datasheet (36 pp, sha256 bcb0e7c897372eeb, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF