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DP4407B

Public Made by Adom

by adom

Shenzhen Developer Microelec. MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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DP4407B

Shenzhen Developer Microelec. · MOSFETs · SOP-8

DP4407B from Shenzhen Developer Microelec., in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the P-channel MOSFET (VDS -30 V, ID -12 A), tied with pins 2 and 3.
2 S passive Source of the P-channel MOSFET (VDS -30 V, ID -12 A), tied with pins 1 and 3.
3 S passive Source of the P-channel MOSFET (VDS -30 V, ID -12 A), tied with pins 1 and 2.
4 G input Gate of the P-channel MOSFET, rated VGS ±25 V with threshold VGS(th) of -1 V min to -3 V max.
5 D passive Drain of the P-channel MOSFET (VDS -30 V, ID -12 A continuous, -60 A pulsed), tied with pins 6, 7 and 8.
6 D passive Drain of the P-channel MOSFET (VDS -30 V, ID -12 A continuous, -60 A pulsed), tied with pins 5, 7 and 8.
7 D passive Drain of the P-channel MOSFET (VDS -30 V, ID -12 A continuous, -60 A pulsed), tied with pins 5, 6 and 8.
8 D passive Drain of the P-channel MOSFET (VDS -30 V, ID -12 A continuous, -60 A pulsed), tied with pins 5, 6 and 7.

Key specifications

Parameter Value
Manufacturer Shenzhen Developer Microelec.
Package SOP-8
Category Triode/MOS Tube/Transistor
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS -30 V VGS=0V, ID=-250μA 3
Zero Gate Voltage Drain Current IDSS -1 μA VDS=-30V, VGS=0V 3
Gate-Body Leakage Current IGSS -100 100 nA VGS=±25V, VDS=0V 3
Gate Threshold Voltage VGS(th) -1 -1.8 -3 V VDS=VGS, ID=-250μA 3
Drain-Source On-State Resistance RDS(ON) 9 11 mΩ VGS=-20V, ID=-12A 3
Drain-Source On-State Resistance RDS(ON) 10 13 mΩ VGS=-10V, ID=-12A 3
Drain-Source On-State Resistance RDS(ON) 12.7 17 mΩ VGS=-6V, ID=-10A 3
Diode Forward Voltage VSD -0.7 -1 V VGS=0V, IS=-1A 3
Drain-Source Voltage VDS -30 V 2
Gate-Source Voltage VGS -25 25 V 2
Drain Current-Continuous ID -12 A TJ=25℃ 2
Pulsed Drain Current IDM -60 A Pulsed (note b: guaranteed by design, not subject to production testing) 2
Drain-Source Diode Forward Current IS -3 A 2
Maximum Power Dissipation PD 3.1 W Surface mounted on 1in² pad area, T<10 sec (note a) 2
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 2
Thermal Resistance, Junction-to-Ambient RθJA 60 ℃/W Surface mounted on 1in² pad area, T<10 sec (note a) 2

CAD (KiCad official)

  • Symbol: DP4407B
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: dp4407b-etched.step / dp4407b-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dp4407b.step / dp4407b.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Shenzhen Developer Microelec. datasheet (8 pp, sha256 932b8f42fe9d8995, retrieved 2026-10-26, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF