# DOU30N06

**DOINGTER** · MOSFETs · TO-251

DOU30N06 from DOINGTER, in a TO-251. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel MOSFET; gate-source voltage is rated at ±20 V (VGS). |
| 2 | D | passive | Drain terminal of the MOSFET; drain-source voltage is rated at 60 V (VDS) with continuous drain current of 30 A at TC=25℃. |
| 3 | S | passive | Source terminal of the MOSFET; body diode continuous source current is rated at 25 A and pulsed at 100 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | DOINGTER |
| Package | TO-251 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 60 |  |  | V | VGS=0V, ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VGS=0V, VDS=60V | 2 |
| Gate-Source Leakage Current | IGSS |  |  | 100 | nA | VGS=±20V, VDS=0A | 2 |
| Gate-Source Threshold Voltage | VGS(th) | 1.2 |  | 2.5 | V | VGS=VDS, ID=250μA | 2 |
| Drain-Source On Resistance | RDS(ON) |  | 21 | 26 | mΩ | VGS=10V,ID=10A | 2 |
| Drain-Source On Resistance | RDS(ON) |  | 26 | 34 | mΩ | VGS=4.5V,ID=5A | 2 |
| Diode Forward Voltage | VSD |  |  | 1.2 | V | VGS=0V, ISD=30A | 2 |
| Continuous Drain Current | IS |  |  | 25 | A | VD=VG=0V | 2 |
| Pulsed Drain Current (diode) | ISM |  |  | 100 | A |  | 2 |
| Drain-Source Voltage | VDS |  |  | 60 | V | TC=25℃ | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V | TC=25℃ | 1 |
| Continuous Drain Current | ID |  |  | 30 | A | TC=25℃ | 1 |
| Pulsed Drain Current | IDM |  |  | 120 | A |  | 1 |
| Power Dissipation | PD |  |  | 55 | W | TC=25℃ | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 23 | mJ |  | 1 |
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 |  | 175 | ℃ |  | 1 |
| Thermal Resistance, Junction to Case | ƟJC |  |  | 2.7 | ℃/W |  | 1 |

## CAD (KiCad official)

- Symbol: `DOU30N06`
- Footprint: `Package_TO_SOT_THT:TO-251-3_Vertical`
- 3D model: TO-251 (KiCad packages3D, STEP)
- 3D model files: `dou30n06-etched.step` / `dou30n06-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `dou30n06.step` / `dou30n06.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [DOINGTER datasheet](docs/dou30n06-datasheet.pdf) (6 pp, sha256 `4400112eced7eefe`, retrieved 2026-11-07, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/dou30n06-datasheet.pdf)