# DOU10N06

**DOINGTER** · MOSFETs · TO-251

DOU10N06 from DOINGTER, in a TO-251. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20V with threshold VGS(th) of 1.2V min to 2.5V max at ID=250μA. |
| 2 | D | passive | Drain, also connected to the tab; drain-source voltage rated 60V and continuous drain current 11A at TC=25℃. |
| 3 | S | passive | Source; connects to the body diode anode with continuous source current of 11A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | DOINGTER |
| Package | TO-251 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 60 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID |  |  | 11 | A | TC=25℃ | 1 |
| Continuous Drain Current | ID |  |  | 7 | A | TC=100℃ | 1 |
| Pulsed Drain Current |  |  |  | 44 | A |  | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 25 | mJ |  | 1 |
| Power Dissipation | PD |  |  | 25 | W | TC=25℃ | 1 |
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance, Junction to Case | RθJC |  |  | 5 | ℃/W |  | 1 |
| Thermal Resistance, Junction to Ambient | RθJA |  |  | 62 | ℃/W |  | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 60 |  |  | V | VGS=0V,ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VGS=0V, VDS=60V | 2 |
| Gate-Source Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V, VDS=0A | 2 |
| Gate-Source Threshold Voltage | VGS(th) | 1.2 | 1.8 | 2.5 | V | VGS=VDS, ID=250μA | 2 |
| Drain-Source On Resistance | RDS(ON) |  | 60 | 75 | mΩ | VGS=10V,ID=6A | 2 |
| Drain-Source On Resistance | RDS(ON) |  | 70 | 90 | mΩ | VGS=4.5V,ID=3A | 2 |
| Input Capacitance | Ciss |  | 500 | 725 | pF | VDS=15V, VGS=0V, f=1MHz | 2 |
| Output Capacitance | Coss |  | 45 | 65 | pF | VDS=15V, VGS=0V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss |  | 16 | 30 | pF | VDS=15V, VGS=0V, f=1MHz | 2 |
| Total Gate Charge | Qg |  | 9.3 | 13 | nC | VGS=10V, VDS=48V, ID=6A | 2 |
| Gate-Source Charge | Qgs |  | 2.1 | 3 | nC | VGS=10V, VDS=48V, ID=6A | 2 |
| Gate-Drain Miller Charge | Qgd |  | 1.8 | 4 | nC | VGS=10V, VDS=48V, ID=6A | 2 |
| Source-Drain Diode Forward Voltage | VSD |  |  | 1 | V | VGS=0V,IS=1A | 2 |
| Continuous Source Current | IS |  |  | 11 | A | Vg=Vd=0V | 3 |
| Pulsed Source Current | ISM |  |  | 44 | A |  | 3 |

## CAD (KiCad official)

- Symbol: `DOU10N06`
- Footprint: `Package_TO_SOT_THT:TO-251-3_Vertical`
- 3D model: TO-251 (KiCad packages3D, STEP)
- 3D model files: `dou10n06-etched.step` / `dou10n06-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `dou10n06.step` / `dou10n06.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [DOINGTER datasheet](docs/dou10n06-datasheet.pdf) (4 pp, sha256 `564337e676953c69`, retrieved 2026-11-07, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/dou10n06-datasheet.pdf)