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DOS12P03

Public Made by Adom

by adom

DOINGTER MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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DOS12P03

DOINGTER · MOSFETs · SOP-8

DOS12P03 from DOINGTER, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the P-channel MOSFET (pin 1), with drain-source voltage rated -30 V.
2 S passive Source of the P-channel MOSFET, tied internally with the other source pins.
3 S passive Source of the P-channel MOSFET, tied internally with the other source pins.
4 G input Gate of the P-channel MOSFET, with gate-source voltage rated ±20 V and threshold of -1 V to -3 V.
5 D passive Drain of the P-channel MOSFET, continuous drain current -12 A and pulsed -48 A.
6 D passive Drain of the P-channel MOSFET, tied internally with the other drain pins.
7 D passive Drain of the P-channel MOSFET, tied internally with the other drain pins.
8 D passive Drain of the P-channel MOSFET, tied internally with the other drain pins.

Key specifications

Parameter Value
Manufacturer DOINGTER
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -30 V TA=25℃ 1
Gate-Source Voltage VGS -20 20 V TA=25℃ 1
Continuous Drain Current ID -12 A TA=25℃ 1
Continuous Drain Current ID -8.4 A TA=100℃ 1
Pulsed Drain Current IDM -48 A TA=25℃ 1
Power Dissipation PD 3.3 W TA=25℃ 1
Single pulse avalanche energy EAS 133 mJ TJ=25℃,VDD=-15V,VG=-10V,L=0.5mH 1
Operating and Storage Junction Temperature Range TJ, TSTG -55 150 ℃ 1
Thermal Resistance, Junction to Ambient RƟJA 38 ℃/W 1
Drain-Source Breakdown Voltage BVDSS -30 V VGS=0V,ID=250μA 2
Zero Gate Voltage Drain Current IDSS -1 μA VGS=0V, VDS=-30V 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0A 2
Gate-Source Threshold Voltage VGS(th) -1 -1.6 -3 V VGS=VDS, ID=250μA 2
Drain-Source On Resistance RDS(ON) 7 10 mΩ VGS=-10V,ID=-10A 2
Drain-Source On Resistance RDS(ON) 11.5 14 mΩ VGS=-4.5V,ID=-5A 2
Diode Forward Voltage VSD -1.2 V VGS=0V, ISD=-12A 2
Continuous Drain Current (diode) IS -10 A VD=VG=0V 2
Pulsed Drain Current (diode) ISM -40 A VD=VG=0V 2
Input Capacitance Ciss 2350 pF VDS=-15V, VGS=0V, f=1MHz 2
Output Capacitance Coss 341 pF VDS=-15V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 315 pF VDS=-15V, VGS=0V, f=1MHz 2
Turn-On Delay Time td(on) 14 ns VDS=-15V, RG=2.5Ω, ID=-6A,VGS=-10V 2
Rise Time tr 20 ns VDS=-15V, RG=2.5Ω, ID=-6A,VGS=-10V 2
Turn-Off Delay Time td(off) 95 ns VDS=-15V, RG=2.5Ω, ID=-6A,VGS=-10V 2
Fall Time tf 65 ns VDS=-15V, RG=2.5Ω, ID=-6A,VGS=-10V 2
Total Gate Charge Qg 30 nC VGS=-10V, VDS=-15V, ID=-12A 2
Gate-Source Charge Qgs 5.3 nC VGS=-10V, VDS=-15V, ID=-12A 2
Gate-Drain Miller Charge Qgd 7.6 nC VGS=-10V, VDS=-15V, ID=-12A 2

CAD (KiCad official)

  • Symbol: DOS12P03
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: dos12p03-etched.step / dos12p03-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dos12p03.step / dos12p03.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: DOINGTER datasheet (7 pp, sha256 7e74bcb9c7f82916, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF