component
DOP50N06
Public Made by Adomby adom
DOINGTER MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 7d ago |
| viewers | 7d ago |
| dop50n06-etched.glb | 7d ago |
| dop50n06-etched.step | 7d ago |
| dop50n06-hero.glb | 7d ago |
| dop50n06-hero.overlay.json | 7d ago |
| dop50n06.glb | 7d ago |
| dop50n06.kicad_mod | 7d ago |
| dop50n06.kicad_sym | 7d ago |
| dop50n06.lbr | 7d ago |
| dop50n06.step | 7d ago |
| package.json | 7d ago |
| page.json | 7d ago |
| README.md | 7d ago |
DOP50N06
DOINGTER · MOSFETs · TO-220
DOP50N06 from DOINGTER, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V with threshold VGS(th) of 1.4 V min to 2.5 V max at ID=250 μA. |
| 2 | D | passive | Drain (also connected to the tab); drain-source voltage 60 V max, continuous drain current 50 A at TC=25℃ and 90 A pulsed. |
| 3 | S | passive | Source; continuous body-diode current IS of 50 A max with forward voltage up to 1.2 V at ISD=20A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | DOINGTER |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 50 | A | TC=25℃ | 1 | ||
| Continuous Drain Current | ID | 35.4 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 90 | A | 1 | |||
| Power Dissipation | PD | 85 | W | TC=25℃ | 1 | ||
| Single pulse avalanche energy | EAS | 245 | mJ | Note 5 | 1 | ||
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 | 175 | ℃ | 1 | ||
| Thermal Resistance, Junction to Case | RƟJC | 3.3 | ℃/W | Note 2 | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS=0V, ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VGS=0V, VDS=60V | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0A | 2 | |
| Gate-Source Threshold Voltage | VGS(th) | 1.4 | 1.9 | 2.5 | V | VGS=VDS, ID=250μA | 2 |
| Drain-Source On Resistance | RDS(ON) | 11 | 15 | mΩ | VGS=10V, ID=20A | 2 | |
| Drain-Source On Resistance | RDS(ON) | 15 | 20 | mΩ | VDS=4.5V, ID=10A | 2 | |
| Continuous Drain Current (diode) | IS | 50 | A | 2 | |||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, ISD=20A | 2 |
CAD (KiCad official)
- Symbol:
DOP50N06 - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
dop50n06-etched.step/dop50n06-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dop50n06.step/dop50n06.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: DOINGTER datasheet (7 pp, sha256
369dbf8cd3ab9a7d, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).