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DOP110P04

Public Made by Adom

by adom

DOINGTER MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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DOP110P04

DOINGTER · MOSFETs · TO-220

DOP110P04 from DOINGTER, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate (Pin1) of the P-channel MOSFET, with VGS limited to ±20 V and threshold VGS(th) of -1 V to -2.5 V.
2 D passive Drain (Pin2), also connected to the tab, rated VDS = -40 V and continuous ID = -110 A (-73 A at TC=100℃).
3 S passive Source (Pin3) of the P-channel MOSFET, carrying continuous current up to -110 A with a body diode to drain.

Key specifications

Parameter Value
Manufacturer DOINGTER
Package TO-220
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -40 V TC=25℃ 1
Gate-Source Voltage VGS -20 20 V TC=25℃ 1
Continuous Drain Current ID -110 A TC=25℃ 1
Continuous Drain Current ID -73 A TC=100℃ 1
Pulsed Drain Current IDM -416 A TC=25℃ 1
Power Dissipation PD 115 W TC=25℃ 1
Single pulse avalanche energy EAS 576 mJ TJ=25℃,VDD=-40V,VG=-10V, Rg=25Ω, L=0.5mH 1
Operating and Storage Junction Temperature Range TJ, TSTG -55 175 ℃ 1
Thermal Resistance, Junction to Case RƟJC 1.3 ℃/W 1
Drain-Source Breakdown Voltage BVDSS -40 V VGS=0V,ID=250μA 2
Zero Gate Voltage Drain Current IDSS -1 μA VGS=0V, VDS=-40V 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0A 2
Gate-Source Threshold Voltage VGS(th) -1 -2.5 V VGS=VDS, ID=250μA 2
Drain-Source On Resistance RDS(ON) 4.5 5.5 mΩ VGS=-10V,ID=-20A 2
Drain-Source On Resistance RDS(ON) 6.1 8 mΩ VGS=-4.5V,ID=-20A 2
Diode Forward Voltage VSD -1.2 V VGS=0V, ISD=-20A 2
Continuous Drain Current (diode) IS -110 A VD=VG=0V 2
Pulsed Drain Current (diode) ISM -416 A VD=VG=0V 2
Input Capacitance Ciss 6338 pF VDS=-20V, VGS=0V, f=1MHz 2
Output Capacitance Coss 525 pF VDS=-20V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 335 pF VDS=-20V, VGS=0V, f=1MHz 2
Turn-On Delay Time td(on) 16.8 ns VDS=-20V, RENG=3Ω, VGS=-10V 2
Rise Time tr 16.2 ns VDS=-20V, RENG=3Ω, VGS=-10V 2
Turn-Off Delay Time td(off) 69 ns VDS=-20V, RENG=3Ω, VGS=-10V 2
Fall Time tf 32 ns VDS=-20V, RENG=3Ω, VGS=-10V 2
Total Gate Charge Qg 120 nc VGS=-10V, VDS=-20V, ID=-20A 2
Gate-Source Charge Qgs 12.4 nc VGS=-10V, VDS=-20V, ID=-20A 2
Gate-Drain Miller Charge Qgd 23 nc VGS=-10V, VDS=-20V, ID=-20A 2
Reverse Recovery Time Trr 24 ns IF=-20A,TJ=25℃, dI/dt=100A/us 2
Reverse Recovery Charge Qrr 140 nc IF=-20A,TJ=25℃, dI/dt=100A/us 2

CAD (KiCad official)

  • Symbol: DOP110P04
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: dop110p04-etched.step / dop110p04-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dop110p04.step / dop110p04.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: DOINGTER datasheet (6 pp, sha256 0a5d418dcea6c54b, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF