component
DON70N06
Public Made by Adomby adom
DOINGTER MOSFETs, DFN5x6-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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DON70N06
DOINGTER · MOSFETs · DFN5x6-8
DON70N06 from DOINGTER, in a DFN5x6-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source pin (pins 1-3 are source); body diode anode, with continuous diode forward current IS of 70 A. |
| 2 | S | passive | Source pin (pins 1-3 are source); VDS rated 60 V and ID 70 A at TC=25°C. |
| 3 | S | passive | Source pin (pins 1-3 are source); gate-source voltage limit is ±20 V. |
| 4 | G | input | Gate pin; VGS rated ±20 V with threshold VGS(th) of 1 V min to 2.5 V max at ID=250 µA. |
| 5 | D | passive | Drain pin (pins 5-8 are drain); VDS rated 60 V, RDS(ON) 6 mΩ max at VGS=10 V. |
| 6 | D | passive | Drain pin (pins 5-8 are drain); continuous drain current 70 A and pulsed 210 A. |
| 7 | D | passive | Drain pin (pins 5-8 are drain); drain-source leakage IDSS 1 µA max at VDS=60 V. |
| 8 | D | passive | Drain pin (pins 5-8 are drain); junction temperature range -55 to +150 °C. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | DOINGTER |
| Package | DFN5x6-8 |
| Category | Transistors/Thyristors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 70 | A | TC=25℃ | 1 | ||
| Pulsed Drain Current | IDM | 210 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 66 | mJ | 1 | |||
| Power Dissipation | PD | 87 | W | 1 | |||
| Diode Forward Current | IS | 70 | A | 1 | |||
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction to Case | RθJC | 1.44 | ℃/W | 1 | |||
| Thermal Resistance Junction to Ambient | RθJA | 62 | ℃/W | 2 | |||
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS=0V,ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VGS=0V, VDS=60V | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0A | 2 | |
| Gate-Source Threshold Voltage | VGS(th) | 1 | 2.5 | V | VGS=VDS, ID=250μA | 2 | |
| Drain-Source On Resistance | RDS(ON) | 4.7 | 6 | mΩ | VGS=10V,ID=20A | 2 | |
| Drain-Source On Resistance | RDS(ON) | 6.4 | 10 | mΩ | VGS=4.5V,ID=10A | 2 |
CAD (KiCad official)
- Symbol:
DON70N06 - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN5x6-8 (KiCad packages3D, STEP)
- 3D model files:
don70n06-etched.step/don70n06-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);don70n06.step/don70n06.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: DOINGTER datasheet (5 pp, sha256
3291171b58619157, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# DON70N06
**DOINGTER** · MOSFETs · DFN5x6-8
DON70N06 from DOINGTER, in a DFN5x6-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source pin (pins 1-3 are source); body diode anode, with continuous diode forward current IS of 70 A. |
| 2 | S | passive | Source pin (pins 1-3 are source); VDS rated 60 V and ID 70 A at TC=25°C. |
| 3 | S | passive | Source pin (pins 1-3 are source); gate-source voltage limit is ±20 V. |
| 4 | G | input | Gate pin; VGS rated ±20 V with threshold VGS(th) of 1 V min to 2.5 V max at ID=250 µA. |
| 5 | D | passive | Drain pin (pins 5-8 are drain); VDS rated 60 V, RDS(ON) 6 mΩ max at VGS=10 V. |
| 6 | D | passive | Drain pin (pins 5-8 are drain); continuous drain current 70 A and pulsed 210 A. |
| 7 | D | passive | Drain pin (pins 5-8 are drain); drain-source leakage IDSS 1 µA max at VDS=60 V. |
| 8 | D | passive | Drain pin (pins 5-8 are drain); junction temperature range -55 to +150 °C. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | DOINGTER |
| Package | DFN5x6-8 |
| Category | Transistors/Thyristors |
| Pins | 9 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 60 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID | | | 70 | A | TC=25℃ | 1 |
| Pulsed Drain Current | IDM | | | 210 | A | | 1 |
| Single Pulse Avalanche Energy | EAS | | | 66 | mJ | | 1 |
| Power Dissipation | PD | | | 87 | W | | 1 |
| Diode Forward Current | IS | | | 70 | A | | 1 |
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance, Junction to Case | RθJC | | | 1.44 | ℃/W | | 1 |
| Thermal Resistance Junction to Ambient | RθJA | | | 62 | ℃/W | | 2 |
| Drain-Source Breakdown Voltage | BVDSS | 60 | | | V | VGS=0V,ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VGS=0V, VDS=60V | 2 |
| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0A | 2 |
| Gate-Source Threshold Voltage | VGS(th) | 1 | | 2.5 | V | VGS=VDS, ID=250μA | 2 |
| Drain-Source On Resistance | RDS(ON) | | 4.7 | 6 | mΩ | VGS=10V,ID=20A | 2 |
| Drain-Source On Resistance | RDS(ON) | | 6.4 | 10 | mΩ | VGS=4.5V,ID=10A | 2 |
## CAD (KiCad official)
- Symbol: `DON70N06`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN5x6-8 (KiCad packages3D, STEP)
- 3D model files: `don70n06-etched.step` / `don70n06-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `don70n06.step` / `don70n06.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [DOINGTER datasheet](docs/don70n06-datasheet.pdf) (5 pp, sha256 `3291171b58619157`, retrieved 2026-10-22, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/don70n06-datasheet.pdf)