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DON50N04

Public Made by Adom

by adom

DOINGTER MOSFETs, DFN5x6-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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DON50N04

DOINGTER · MOSFETs · DFN5x6-8

DON50N04 from DOINGTER, in a DFN5x6-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source, pins 1-3 are tied to source of the N-channel MOSFET (VDS=40V, ID=50A).
2 S passive Source, pins 1-3 are tied to source of the N-channel MOSFET (VDS=40V, ID=50A).
3 S passive Source, pins 1-3 are tied to source of the N-channel MOSFET (VDS=40V, ID=50A).
4 G input Gate, VGS limited to ±20V with threshold VGS(th) of 1V min to 2V max at 250μA.
5 D passive Drain, pins 5-8 are the drain of the MOSFET, rated 40V VDS and 50A continuous.
6 D passive Drain, pins 5-8 are the drain of the MOSFET, rated 40V VDS and 50A continuous.
7 D passive Drain, pins 5-8 are the drain of the MOSFET, rated 40V VDS and 50A continuous.
8 D passive Drain, pins 5-8 are the drain of the MOSFET, rated 40V VDS and 50A continuous.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer DOINGTER
Package DFN5x6-8
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 40 V TC=25℃ unless otherwise noted 1
Gate-Source Voltage VGS -20 20 V TC=25℃ unless otherwise noted 1
Continuous Drain Current ID 50 A TC=25℃ 1
Continuous Drain Current ID 35 A TC=100℃ 1
Pulsed Drain Current IDM 200 A 1
Power Dissipation PD 44 W TC=25℃ unless otherwise noted 1
Single pulse avalanche energy EAS 52 mJ 1
Operating and Storage Junction Temperature Range TJ, TSTG -55 150 ℃ 1
Thermal Resistance, Junction to Case RθJC 2.8 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 40 V VGS=0V, ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VGS=0V, VDS=40V 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0A 2
Gate-Source Threshold Voltage VGS(th) 1 1.5 2 V VGS=VDS, ID=250μA 2
Drain-Source On Resistance RDS(ON) 5.5 6.5 mΩ VGS=10V, ID=20A 2
Drain-Source On Resistance RDS(ON) 8 10 mΩ VGS=4.5V, ID=15A 2
Diode Forward Voltage VSD 1.2 V VGS=0V, ISD=20A 2
Continuous Drain Current IS 50 A VD=VG=0V 2
Pulsed Drain Current ISM 200 A 2

CAD (KiCad official)

  • Symbol: DON50N04
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN5x6-8 (KiCad packages3D, STEP)
  • 3D model files: don50n04-etched.step / don50n04-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); don50n04.step / don50n04.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: DOINGTER datasheet (6 pp, sha256 2cad6e1a76472aaf, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF