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DON45N04T

Public Made by Adom

by adom

DOINGTER MOSFETs, DFN5x6-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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DON45N04T

DOINGTER · MOSFETs · DFN5x6-8

DON45N04T from DOINGTER, in a DFN5x6-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal (pins 1-3 are source) of the N-channel MOSFET; VDS=40V, ID=45A rating.
2 S passive Source terminal (pins 1-3 are source) of the N-channel MOSFET; VDS=40V, ID=45A rating.
3 S passive Source terminal (pins 1-3 are source) of the N-channel MOSFET; VDS=40V, ID=45A rating.
4 G input Gate terminal of the N-channel MOSFET with a maximum gate-source voltage of ±20V.
5 D passive Drain terminal (pins 5-8 are drain), VDS 40V maximum, RDS(ON) <10mΩ at VGS=10V.
6 D passive Drain terminal (pins 5-8 are drain), VDS 40V maximum, RDS(ON) <10mΩ at VGS=10V.
7 D passive Drain terminal (pins 5-8 are drain), VDS 40V maximum, RDS(ON) <10mΩ at VGS=10V.
8 D passive Drain terminal (pins 5-8 are drain), VDS 40V maximum, RDS(ON) <10mΩ at VGS=10V.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer DOINGTER
Package DFN5x6-8
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 40 V TC=25℃ 1
Gate-Source Voltage VGS -20 20 V TC=25℃ 1
Continuous Drain Current ID 45 A TC=25℃ 1
Continuous Drain Current ID 30 A TC=100℃ 1
Pulsed Drain Current IDM 180 A TC=25℃ 1
Power Dissipation PD 25 W TC=25℃ 1
Single pulse avalanche energy EAS 26 mJ L=0.5mH, VDD=20V, VG=10V, TJ=25℃ (note 2) 1
Operating and Storage Junction Temperature Range TJ, TSTG -55 150 ℃ 1
Thermal Resistance, Junction to Case RθJC 4.8 ℃/W Junction to Case 1
Drain-Source Breakdown Voltage BVDSS 40 V VGS=0V, ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VGS=0V, VDS=40V 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0A 2
Gate-Source Threshold Voltage VGS(th) 1.2 1.7 2.5 V VGS=VDS, ID=250μA 2
Drain-Source On Resistance RDS(ON) 7 10 mΩ VGS=10V, ID=20A 2
Drain-Source On Resistance RDS(ON) 11 16 mΩ VGS=4.5V, ID=15A 2
Input Capacitance Ciss 650 pF VDS=20V, VGS=0V, f=1MHz 2
Output Capacitance Coss 120 pF VDS=20V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 110 pF VDS=20V, VGS=0V, f=1MHz 2
Total Gate Charge Qg 10 nC VGS=10V, VDS=20V, ID=1A 2
Gate-Source Charge Qgs 2.6 nC VGS=10V, VDS=20V, ID=1A 2
Gate-Drain Miller Charge Qgd 4.1 nC VGS=10V, VDS=20V, ID=1A 2
Diode Forward Voltage VSD 1.2 V VGS=0V, ISD=20A 2
Continuous Drain Current IS 45 A VD=VG=0V 2
Pulsed Drain Current ISM 180 A 2

CAD (KiCad official)

  • Symbol: DON45N04T
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN5x6-8 (KiCad packages3D, STEP)
  • 3D model files: don45n04t-etched.step / don45n04t-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); don45n04t.step / don45n04t.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: DOINGTER datasheet (6 pp, sha256 16f6e9a4a685413c, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF