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DON30N10T

Public Made by Adom

by adom

DOINGTER MOSFETs, DFN5x6-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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DON30N10T

DOINGTER · MOSFETs · DFN5x6-8

DON30N10T from DOINGTER, in a DFN5x6-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal (pins 1-3 are source) of the N-channel MOSFET; VDS max 100V, continuous drain/diode current 30A.
2 S passive Source terminal (pins 1-3 are source) of the N-channel MOSFET; VDS max 100V, continuous drain/diode current 30A.
3 S passive Source terminal (pins 1-3 are source) of the N-channel MOSFET; VDS max 100V, continuous drain/diode current 30A.
4 G input Gate terminal with VGS maximum of ±20V and threshold of 1.4V to 2.5V at 250µA.
5 D passive Drain terminal (pins 5-8 are drain), VDS max 100V, 30A continuous, 120A pulsed.
6 D passive Drain terminal (pins 5-8 are drain), VDS max 100V, 30A continuous, 120A pulsed.
7 D passive Drain terminal (pins 5-8 are drain), VDS max 100V, 30A continuous, 120A pulsed.
8 D passive Drain terminal (pins 5-8 are drain), VDS max 100V, 30A continuous, 120A pulsed.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer DOINGTER
Package DFN5x6-8
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 100 V VGS=0V, ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VGS=0V, VDS=100V 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0A 2
Gate-Source Threshold Voltage VGS(th) 1.4 2.5 V VGS=VDS, ID=250μA 2
Drain-Source On Resistance RDS(ON) 16 20 mΩ VGS=10V, ID=10A 2
Drain-Source On Resistance RDS(ON) 17.4 26 mΩ VGS=4.5V, ID=7A 2
Source-Drain Diode Forward Voltage VSD 1.3 V VGS=0V, IS=12A 3
Drain-Source Voltage VDS 100 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 30 A 1
Pulsed Drain Current ID, pulse 120 A 1
Continuous Diode Forward Current IS 30 A 1
Diode Pulsed Current IS, Pulse 120 A 1
Single Pulse Avalanche Energy EAS 57 mJ VDD=50 V, VGS=10 V, L=0.3 mH, starting Tj=25 °C 1
Power Dissipation PD 71 W 1
Operating and Storage Junction Temperature Range TJ, TSTG -55 150 ℃ 1
Thermal Resistance, Junction to Case RθJC 1.76 ℃/W 1
Thermal Resistance, Junction to Ambient RθJA 62 ℃/W Device mounted on 1 in² FR-4 board with 2oz copper, still air, Ta=25 °C 1

CAD (KiCad official)

  • Symbol: DON30N10T
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN5x6-8 (KiCad packages3D, STEP)
  • 3D model files: don30n10t-etched.step / don30n10t-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); don30n10t.step / don30n10t.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: DOINGTER datasheet (4 pp, sha256 5656fcd49e315fd3, retrieved 2026-10-14, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF