component
DOD70N04T
Public Made by Adomby adom
DOINGTER MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 17d ago |
| viewers | 17d ago |
| dod70n04t-etched.glb | 17d ago |
| dod70n04t-etched.step | 17d ago |
| dod70n04t-hero.glb | 17d ago |
| dod70n04t-hero.overlay.json | 17d ago |
| dod70n04t.glb | 17d ago |
| dod70n04t.kicad_mod | 17d ago |
| dod70n04t.kicad_sym | 17d ago |
| dod70n04t.lbr | 17d ago |
| dod70n04t.step | 17d ago |
| package.json | 17d ago |
| page.json | 17d ago |
| README.md | 17d ago |
DOD70N04T
DOINGTER · MOSFETs · TO-252
DOD70N04T from DOINGTER, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V with threshold of 1 V min to 2.5 V max at ID=250 µA. |
| 2 | D | passive | Drain (also the exposed tab); drain-source voltage 40 V max and continuous drain current 70 A at TC=25°C. |
| 3 | S | passive | Source; continuous source current 70 A and pulsed source current 230 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | DOINGTER |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 40 | V | VGS=0V, ID=250μA | 2 | ||
| Gate Threshold Voltage | VGS(th) | 1 | 1.9 | 2.5 | V | VGS=VDS, ID=250μA | 2 |
| Drain-Source On Resistance | RDS(ON) | 4.1 | 5 | mΩ | VGS=10V, ID=30A | 2 | |
| Drain-Source On Resistance | RDS(ON) | 6.4 | 7.6 | mΩ | VGS=4.5V, ID=20A | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VGS=0V, VDS=40V | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | VGS=±20V, VDS=0V | 2 | ||
| Continuous Drain Current (TC=25℃) | ID | 70 | A | TC=25℃ | 1 | ||
| Continuous Drain Current (TC=100℃) | ID | 45 | A | TC=100℃ | 1 | ||
| Continuous Source Current | IS | 70 | A | VG=VD=0V | 2 | ||
| Drain-Source Voltage | VDS | 40 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current, Pulsed | IDM | 230 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 85 | mJ | 1 | |||
| Power Dissipation | PD | 40 | W | TC | 1 | ||
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 45 | ℃/W | 1 | |||
| Thermal Resistance Junction-Case | RθJC | 3.125 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
DOD70N04T - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
dod70n04t-etched.step/dod70n04t-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dod70n04t.step/dod70n04t.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: DOINGTER datasheet (6 pp, sha256
34ef4a823ac36f4a, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).