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DOD60N02

Public Made by Adom

by adom

DOINGTER MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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DOD60N02

DOINGTER · MOSFETs · TO-252

DOD60N02 from DOINGTER, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; VGS rated ±12 V maximum, threshold 0.4 to 1 V at ID=250μA.
2 D passive Drain; VDS rated 20 V, continuous ID 60 A at TC=25℃, pulsed 240 A, connected to the mounting tab.
3 S passive Source; continuous body-diode source current 60 A, diode forward voltage max 1.2 V at 30 A.

Key specifications

Parameter Value
Manufacturer DOINGTER
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 20 V 1
Gate-Source Voltage VGS -12 12 V 1
Continuous Drain Current ID 60 A TC=25℃ 1
Continuous Drain Current ID 39 A TC=100℃ 1
Pulsed Drain Current IDM 240 A 1
Power Dissipation PD 37 W TC=25℃ unless otherwise noted 1
Single pulse avalanche energy EAS 47.6 mJ 1
Operating and Storage Junction Temperature Range TJ, TSTG -55 175 ℃ 1
Thermal Resistance, Junction to Case RθJC 4 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 20 V VGS=0V,ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=20V, VGS=0V 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±12V, VDS=0A 2
Gate-Source Threshold Voltage VGS(th) 0.4 0.7 1 V VGS=VDS, ID=250μA 2
Drain-Source On Resistance RDS(ON) 4.8 6.5 mΩ VGS=4.5V, ID=25A 2
Drain-Source On Resistance RDS(ON) 6.8 10 mΩ VGS=2.5V, ID=15A 2
Input Capacitance Ciss 1831 pF VDS=10V, VGS=0V, f=1MHz 2
Output Capacitance Coss 288 pF VDS=10V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 270 pF VDS=10V, VGS=0V, f=1MHz 2
Turn-On Delay Time td(on) 14 ns VDD=10V, RGEN=3, ID=25A 2
Rise Time tr 36 ns VDD=10V, RGEN=3, ID=25A 2
Turn-Off Delay Time td(off) 51 ns VDD=10V, RGEN=3, ID=25A 2
Fall Time tf 20 ns VDD=10V, RGEN=3, ID=25A 2
Total Gate Charge Qg 22 nC VGS=4.5V, VDS=10V, ID=25A 2
Gate-Source Charge Qgs 4.4 nC 2
Gate-Drain Miller Charge Qgd 7.2 nC 2
Continuous Source Current IS 60 A VG=VD=0V 2
Pulsed Drain Current (source diode) ISM 240 A VG=VD=0V 2
Diode Forward Voltage VSD 1.2 V VGS=0V, ID=30A 2
Reverse Recovery Time Trr 25 ns IF=25A, dI/dt=100A/µs 2
Reverse Recovery Charge Qrr 21 nC 2

CAD (KiCad official)

  • Symbol: DOD60N02
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: dod60n02-etched.step / dod60n02-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dod60n02.step / dod60n02.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: DOINGTER datasheet (4 pp, sha256 34e5a3083eec549c, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF