# DOD50N03

**DOINGTER** · MOSFETs · TO-252

DOD50N03 from DOINGTER, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS rated ±20 V maximum and a threshold VGS(th) of 1.2 V min to 2.5 V max at ID=250 µA. |
| 2 | D | passive | Drain (also the exposed tab); rated VDS=30 V with continuous drain current of 55 A at TC=25℃. |
| 3 | S | passive | Source; carries the continuous source (body diode) current of up to 43 A and pulsed 112 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | DOINGTER |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 30 | V | TC=25℃ unless otherwise noted | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID |  |  | 55 | A | TC=25℃ | 1 |
| Continuous Drain Current | ID |  |  | 30 | A | TC=100℃ | 1 |
| Pulsed Drain Current |  |  |  | 112 | A |  | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 24.2 | mJ | Note 3: VDD=25V,VGS=10V,L=0.1mH,IAS=22A | 1 |
| Avalanche Current | IAS |  |  | 22 | A |  | 1 |
| Power Dissipation | PD |  |  | 37.5 | W | TC=25℃ | 1 |
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 |  | 175 | ℃ |  | 1 |
| Thermal Resistance, Junction to Case | RθJC |  |  | 4 | ℃/W |  | 1 |
| Thermal Resistance, Junction to Ambient | RθJA |  |  | 62 | ℃/W | Note 1: surface mounted on 1 inch² FR-4 board, 2OZ copper | 2 |
| Drain-Source Breakdown Voltage | BVDSS | 30 |  |  | V | VGS=0V,ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VGS=0V, VDS=30V | 2 |
| Gate-Source Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V, VDS=0A | 2 |
| Gate-Source Threshold Voltage | VGS(th) | 1.2 |  | 2.5 | V | VGS=VDS, ID=250μA | 2 |
| Drain-Source On Resistance | RDS(ON) |  |  | 10 | mΩ | VGS=10V,ID=30A | 2 |
| Drain-Source On Resistance | RDS(ON) |  |  | 18 | mΩ | VGS=4.5V,ID=15A | 2 |
| Source-Drain Diode Forward Voltage | VSD |  |  | 1 | V | VGS=0V,IS=1A | 3 |
| Continuous Source Current | IS |  |  | 43 | A |  | 3 |
| Pulsed Source Current | ISM |  |  | 112 | A |  | 3 |

## CAD (KiCad official)

- Symbol: `DOD50N03`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `dod50n03-etched.step` / `dod50n03-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `dod50n03.step` / `dod50n03.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [DOINGTER datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8604416404619735040) (4 pp, sha256 `0811b4c6f1f5ba75`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/dod50n03-datasheet.pdf)