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DOD12N10

Public Made by Adom

by adom

DOINGTER MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Generated by kicad-footprint-generator · KiCad file format 20260206
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docs dod12n10: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 23d ago
viewers dod12n10: viewers · Ray 1mo ago
dod12n10-etched.glb dod12n10: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 23d ago
dod12n10-etched.step dod12n10: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 23d ago
dod12n10-hero.glb dod12n10: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 23d ago
dod12n10-hero.overlay.json dod12n10: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 23d ago
dod12n10.glb Publish 0.1.0 · Ray 1mo ago
dod12n10.kicad_mod Publish 0.1.0 · Ray 1mo ago
dod12n10.kicad_sym Publish 0.1.0 · Ray 1mo ago
dod12n10.lbr Publish 0.1.0 · Ray 1mo ago
dod12n10.step Publish 0.1.0 · Ray 1mo ago
package.json dod12n10: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 23d ago
page.json dod12n10: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 23d ago
README.md Publish 0.1.0 · Ray 1mo ago

DOD12N10

DOINGTER · MOSFETs · TO-252

DOD12N10 from DOINGTER, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with VGS rated ±20 V maximum and threshold VGS(th) 1.22 V min to 2.4 V max at ID=250μA.
2 D passive Drain (also the tab); rated VDS 100 V and continuous ID 11.3 A at TC=25℃, pulsed IDM 45.4 A.
3 S passive Source; connects to the body diode anode side of the N-channel MOSFET, with diode forward voltage VSD max 1.1 V at IS=1A.

Key specifications

Parameter Value
Manufacturer DOINGTER
Package TO-252
Category Transistors/Thyristors
Pins 3

CAD (KiCad official)

  • Symbol: DOD12N10
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: dod12n10-etched.step / dod12n10-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dod12n10.step / dod12n10.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: DOINGTER datasheet (4 pp, sha256 d1ff8a1164b209ed, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF