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DOD10P10

Public Made by Adom

by adom

DOINGTER MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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docs Publish 0.1.0 · Ray 3h ago
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DOD10P10

DOINGTER · MOSFETs · TO-252

DOD10P10 from DOINGTER, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; VGS rated ±20 V maximum, with gate threshold of -1 V to -2.5 V at ID=250μA.
2 D passive Drain; VDS rated -100 V and continuous drain current -10 A at TC=25℃, also connected to the exposed tab.
3 S passive Source; body-diode continuous current IS is -10 A max.

Key specifications

Parameter Value
Manufacturer DOINGTER
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -100 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -10 A TC=25℃ 1
Continuous Drain Current ID -5.5 A TC=100℃ 1
Pulsed Drain Current IDM -26.8 A 1
Power Dissipation PD 40 W 1
Single pulse avalanche energy EAS 109 mJ TJ=25℃,VDD=50V,VG=-10V, Rg=25Ω, L=0.5mH 1
Operating and Storage Junction Temperature Range TJ, TSTG -55 175 ℃ 1
Thermal Resistance, Junction to Case RθJC 3.7 ℃/W 1
Drain-Source Breakdown Voltage BVDSS -100 V VGS=0V,ID=250μA 2
Zero Gate Voltage Drain Current IDSS -1 μA VGS=0V, VDS=-200V 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0A 2
Gate-Source Threshold Voltage VGS(th) -1 -2.5 V VGS=VDS, ID=250μA 2
Drain-Source On Resistance RDS(ON) 260 300 mΩ VGS=-10V,ID=-3A 2
Drain-Source On Resistance RDS(ON) 302 350 mΩ VGS=-4.5V,ID=-3A 2
Input Capacitance Ciss 1198 pF VDS=-50V, VGS=0V, f=1MHz 2
Output Capacitance Coss 33.7 pF VDS=-50V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 28.1 pF VDS=-50V, VGS=0V, f=1MHz 2
Turn-On Delay Time td(on) 13.4 ns VDS=-50V RENG=3Ω,VGS=-10V 2
Rise Time tr 3.7 ns VDS=-50V RENG=3Ω,VGS=-10V 2
Turn-Off Delay Time td(off) 41 ns VDS=-50V RENG=3Ω,VGS=-10V 2
Fall Time tf 6.3 ns VDS=-50V RENG=3Ω,VGS=-10V 2
Total Gate Charge Qg 19.5 nc VGS=-10V, VDS=-50V, ID=-3A 2
Gate-Source Charge Qgs 5 nc VGS=-10V, VDS=-50V, ID=-3A 2
Gate-Drain Miller Charge Qgd 4.1 nc VGS=-10V, VDS=-50V, ID=-3A 2
Diode Forward Voltage VSD -1.2 V VGS=0V, ISD=-3A 2
Continuous Drain Current (body diode) IS -10 A VD=VG=0V 2
Pulsed Drain Current (body diode) ISM -5.5 A 2
Reverse Recovery Time Trr 42.9 ns IF=-3A,TJ=25℃ dI/dt=100A/us 2
Reverse Recovery Charge Qrr 83.7 nc IF=-3A,TJ=25℃ dI/dt=100A/us 2

CAD (KiCad official)

  • Symbol: DOD10P10
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: dod10p10-etched.step / dod10p10-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dod10p10.step / dod10p10.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: DOINGTER datasheet (6 pp, sha256 645ad3d7a81f7bbd, retrieved 2026-11-07, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF