component
DO5T10BA
Public Made by Adomby adom
DOINGTER MOSFETs, SOT-23-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 17d ago |
| viewers | 17d ago |
| do5t10ba-etched.glb | 17d ago |
| do5t10ba-etched.step | 17d ago |
| do5t10ba-hero.glb | 17d ago |
| do5t10ba-hero.overlay.json | 17d ago |
| do5t10ba.glb | 17d ago |
| do5t10ba.kicad_mod | 17d ago |
| do5t10ba.kicad_sym | 17d ago |
| do5t10ba.lbr | 17d ago |
| do5t10ba.step | 17d ago |
| package.json | 17d ago |
| page.json | 17d ago |
| README.md | 17d ago |
DO5T10BA
DOINGTER · MOSFETs · SOT-23-3
DO5T10BA from DOINGTER, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS rated ±20 V maximum and threshold VGS(th) 1.2 V min to 2.5 V max at ID=250μA. |
| 2 | D | passive | Drain; drain-source voltage rated 100 V maximum with continuous drain current of 5 A at TA=25℃ and pulsed 12 A. |
| 3 | S | passive | Source; connects to the source of the N-channel MOSFET and the body diode anode, continuous diode current IS 5 A max. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | DOINGTER |
| Package | SOT-23-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 100 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 5 | A | TA=25℃ | 1 | ||
| Continuous Drain Current | ID | 3 | A | TA=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 12 | A | Note 1: pulse width limited by maximum junction temperature | 1 | ||
| Power Dissipation | PD | 1.3 | W | TA=25℃ | 1 | ||
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 96 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 100 | V | VGS=0V, ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VGS=0V, VDS=100V | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0A | 2 | |
| Gate-Source Threshold Voltage | VGS(th) | 1.2 | 1.6 | 2.5 | V | VGS=VDS, ID=250μA | 2 |
| Drain-Source On Resistance | RDS(ON) | 90 | 120 | mΩ | VGS=10V, ID=3A | 2 | |
| Drain-Source On Resistance | RDS(ON) | 120 | 150 | mΩ | VGS=4.5V, ID=2A | 2 | |
| Diode Forward Voltage | VSD | 1.3 | V | VGS=0V, ISD=3A | 2 | ||
| Continuous Drain Current (body diode) | IS | 5 | A | VD=VG=0V | 2 | ||
| Pulsed Drain Current (body diode) | ISM | 12 | A | 2 |
CAD (KiCad official)
- Symbol:
DO5T10BA - Footprint:
Package_TO_SOT_SMD:SOT-23-3 - 3D model: SOT-23-3 (KiCad packages3D, STEP)
- 3D model files:
do5t10ba-etched.step/do5t10ba-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);do5t10ba.step/do5t10ba.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: DOINGTER datasheet (5 pp, sha256
52a9e88ae05089b3, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).