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Ray Publish 0.1.0 f8e13f1 6d ago

DO4407

DOINGTER · MOSFETs · SOP-8

DO4407 from DOINGTER, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the P-channel MOSFET, pins 1-3 are tied together as source.
2 S passive Source of the P-channel MOSFET, pins 1-3 are tied together as source.
3 S passive Source of the P-channel MOSFET, pins 1-3 are tied together as source.
4 G input Gate of the P-channel MOSFET with VGS rated ±20 V maximum.
5 D passive Drain of the P-channel MOSFET (pins 5-8 tied together), VDS -30 V maximum and ID -10 A continuous.
6 D passive Drain of the P-channel MOSFET (pins 5-8 tied together), VDS -30 V maximum and ID -10 A continuous.
7 D passive Drain of the P-channel MOSFET (pins 5-8 tied together), VDS -30 V maximum and ID -10 A continuous.
8 D passive Drain of the P-channel MOSFET (pins 5-8 tied together), VDS -30 V maximum and ID -10 A continuous.

Key specifications

Parameter Value
Manufacturer DOINGTER
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -10 A TA=25℃ 1
Continuous Drain Current ID -7 A TC=100℃ 1
Drain Current-Pulsed IDM -50 A 1
Power Dissipation PD 4 W 1
Operating and Storage Junction Temperature Range TJ, TSTG -55 150 ℃ 1
Single pulse avalanche energy EAS 47 mJ Note 2: Starting TJ=25C, VDD=30V, VG=10V, RG=25ohm, L=0.5mH, IAS=13.5A 1
Thermal Resistance, Junction to Ambient RƟJA 30 ℃/W Note 3: mounted on 1 inch² pad of 2oz copper FR4 PCB 1
Drain-Source Breakdown Voltage BVDSS -30 V VGS=0V,ID=250μA 2
Zero Gate Voltage Drain Current IDSS -1 μA VGS=0V, VDS=-10V 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0A 2
Gate-Source Threshold Voltage VGS(th) -1.1 -1.5 -1.9 V VGS=VDS, ID=250μA 2
Drain-Source On Resistance RDS(ON) 12 15 mΩ VGS=-10V,ID=-10A 2
Drain-Source On Resistance RDS(ON) 19 23 mΩ VGS=-4.5V,ID=-5A 2
Diode Forward Voltage VSD -0.75 -1 V VGS=0V,IS=-10A 2
Maximum Continuous Drain to Source Diode Forward Current IS -10 A VG=VD=0 2
Max. Pulsed Forward Current ISM -50 A VG=VD=0V 2

CAD (KiCad official)

  • Symbol: DO4407
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: do4407-etched.step / do4407-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); do4407.step / do4407.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: DOINGTER datasheet (6 pp, sha256 4527d5743b2b4acd, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF