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DO3N10SA

Public Made by Adom

by adom

DOINGTER MOSFETs, SOT-23-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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DO3N10SA

DOINGTER · MOSFETs · SOT-23-3

DO3N10SA from DOINGTER, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V, with VGS(th) of 1.0 V min to 2.2 V max at ID=250μA.
2 D passive Drain; drain-source voltage 100 V max, continuous drain current 3 A at TA=25℃ and pulsed 11 A.
3 S passive Source; source drain (body diode) current 3 A continuous and 11 A pulsed, forward voltage 1.2 V max at ISD=2A.

Key specifications

Parameter Value
Manufacturer DOINGTER
Package SOT-23-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 100 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 1.8 A TA=70℃ 1
Pulse Drain Current IDM 11 A 1
Power Dissipation PD 2.5 W TA=25℃ 1
Operating and Storage Junction Temperature Range TJ, TSTG -55 150 ℃ 1
Thermal Resistance, Junction to Ambient RƟJA 50 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 100 V VGS=0V,ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VGS=0V, VDS=100V 2
Gate-Source Leakage Current IGSS -100 100 μA VGS=0V, VDS=20V 2
Source Threshold Voltage VGS(th) 1 2.2 V VGS=VDS, ID=250μA 2
Drain-Source on-Resistance RDS(on) 220 mΩ VGS=10V,ID=2A 2
Drain-Source on-Resistance RDS(on) 223 312 mΩ VGS=4.5V,ID=1A 2
Source drain current IS 3 A 2
Source drain current ISM 11 A 2
Forward Voltage VSD 1.2 V VGS=0V , ISD=2A,TJ=25℃ 2
Input Capacitance Ciss 320 pF VDS=25V, VGS=0V, f=1MHz 2
Output Capacitance Coss 20 pF VDS=25V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 14 pF VDS=25V, VGS=0V, f=1MHz 2
Turn-On Delay Time td(on) 13 ns VDD=30V, VGS=10V, ID=1A, RG=3Ω 2
Rise Time tr 53 ns VDD=30V, VGS=10V, ID=1A, RG=3Ω 2
Turn-Off Delay Time td(off) 17 ns VDD=30V, VGS=10V, ID=1A, RG=3Ω 2
Fall Time tf 10 ns VDD=30V, VGS=10V, ID=1A, RG=3Ω 2
Total Gate Charge Qg 5.2 nC VGS=10V, VDS=30V, ID=2A 2
Gate-Source Charge Qgs 1.2 nC VGS=10V, VDS=30V, ID=2A 2
Gate-Drain Miller Charge Qgd 1.6 nC VGS=10V, VDS=30V, ID=2A 2

CAD (KiCad official)

  • Symbol: DO3N10SA
  • Footprint: Package_TO_SOT_SMD:SOT-23-3
  • 3D model: SOT-23-3 (KiCad packages3D, STEP)
  • 3D model files: do3n10sa-etched.step / do3n10sa-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); do3n10sa.step / do3n10sa.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: DOINGTER datasheet (6 pp, sha256 bddc13d4d171e94a, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF