component
DNLS350Y-13
Public Made by Adomby adom
Diodes Incorporated Bipolar Transistors - BJT, SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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Contents
README
markdownDNLS350Y-13
Diodes Incorporated · Bipolar Transistors - BJT · SOT-89
DNLS350Y-13 from Diodes Incorporated, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the NPN transistor; drives IC up to 3A continuous (5A peak) with IB max 0.5A and VEBO max 5V. |
| 2 | C | passive | Collector, also connected to the exposed tab on the opposite side of the package; VCEO and VCBO max 50V, IC 3A continuous, 5A peak. |
| 3 | E | passive | Emitter of the NPN transistor; VEBO max 5V relative to the base. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-89 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | 50 | V | TA = +25°C | 2 | ||
| Collector-Emitter Voltage | VCEO | 50 | V | TA = +25°C | 2 | ||
| Emitter-Base Voltage | VEBO | 5 | V | TA = +25°C | 2 | ||
| Peak Pulse Collector Current | ICM | 5 | A | TA = +25°C | 2 | ||
| Continuous Collector Current | IC | 3 | A | TA = +25°C | 2 | ||
| Base Current | IB | 0.5 | A | TA = +25°C | 2 | ||
| Power Dissipation | PD | 1 | W | Note 5, 15mm x 15mm 1oz copper | 2 | ||
| Power Dissipation | PD | 1.6 | W | Note 6, 25mm x 25mm 1oz copper | 2 | ||
| Power Dissipation | PD | 2 | W | Note 7, 50mm x 50mm 1oz copper | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 125 | °C/W | Note 5 | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 78 | °C/W | Note 6 | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 62.5 | °C/W | Note 7 | 2 | ||
| Thermal Resistance, Junction to Lead | RθJL | 5.7 | °C/W | Note 8 | 2 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| ESD Human Body Model | ESD HBM | 4000 | V | JEDEC Class 3A | 2 | ||
| ESD Machine Model | ESD MM | 400 | V | JEDEC Class C | 2 | ||
| Collector-Base Cutoff Current | ICBO | 100 | nA | VCB = 50V, IE = 0 | 4 | ||
| Collector-Base Cutoff Current | ICBO | 50 | µA | VCB = 50V, IE = 0, TA = +150°C | 4 | ||
| Emitter-Base Cutoff Current | IEBO | 100 | nA | VEB = 5V, IC = 0 | 4 | ||
| Collector-Emitter Cutoff Current | ICES | 100 | nA | VCE = 50V, VBE = 0 | 4 | ||
| Collector-Base Breakdown Voltage | BVCBO | 50 | V | IC = 100µA | 4 | ||
| Collector-Emitter Breakdown Voltage | BVCEO | 50 | V | IC = 10mA | 4 | ||
| Emitter-Base Breakdown Voltage | BVEBO | 5 | V | IE = 100µA | 4 | ||
| DC Current Gain | hFE | 300 | VCE = 2V, IC = 0.1A | 4 | |||
| DC Current Gain | hFE | 300 | 700 | VCE = 2V, IC = 1A | 4 | ||
| DC Current Gain | hFE | 200 | VCE = 2V, IC = 2A | 4 | |||
| DC Current Gain | hFE | 100 | VCE = 2V, IC = 3A | 4 | |||
| Collector-Emitter Saturation Voltage | VCE(SAT) | 38 | 80 | mV | IC = 0.5A, IB = 50mA | 4 | |
| Collector-Emitter Saturation Voltage | VCE(SAT) | 70 | 160 | mV | IC = 1A, IB = 50mA | 4 | |
| Collector-Emitter Saturation Voltage | VCE(SAT) | 130 | 280 | mV | IC = 2A, IB = 100mA | 4 | |
| Collector-Emitter Saturation Voltage | VCE(SAT) | 124 | 260 | mV | IC = 2A, IB = 200mA | 4 | |
| Collector-Emitter Saturation Voltage | VCE(SAT) | 180 | 370 | mV | IC = 3A, IB = 300mA | 4 | |
| Equivalent On-Resistance | RCE(SAT) | 62 | 130 | mΩ | IE = 2A, IB = 200mA | 4 | |
| Base-Emitter Saturation Voltage | VBE(SAT) | 1.1 | V | IC = 2A, IB = 100mA | 4 | ||
| Base-Emitter Saturation Voltage | VBE(SAT) | 1.2 | V | IC = 3A, IB = 300mA | 4 | ||
| Base-Emitter Turn-on Voltage | VBE(ON) | 1.1 | V | VCE = 2V, IC = 1A | 4 | ||
| Transition Frequency | fT | 100 | MHz | VCE = 5V, IC = 100mA, f = 100MHz | 4 | ||
| Output Capacitance | Cobo | 25 | pF | VCB = 10V, f = 1MHz | 4 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | tin | Terminals: Finish - Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 | 1 |
CAD (KiCad official)
- Symbol:
DNLS350Y-13 - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files:
dnls350y-13-etched.step/dnls350y-13-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dnls350y-13.step/dnls350y-13.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (8 pp, sha256
766d00be5e3387ec, retrieved 2026-10-22, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).