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DN350T05-7

Public Made by Adom

by adom

Diodes Incorporated Bipolar Transistors - BJT, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

Schematic Symbol

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PCB Footprint

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Datasheet

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Contents

README

markdown

DN350T05-7

Diodes Incorporated · Bipolar Transistors - BJT · SOT-23

DN350T05-7 from Diodes Incorporated, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base; drives the NPN transistor, with continuous base current rated up to 25 mA and VEBO of 5.0 V.
2 E passive Emitter; emitter-base voltage is limited to 5.0 V.
3 C passive Collector; rated for 350 V VCEO and 500 mA continuous collector current.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-23
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Voltage VCBO 350 V TA = 25°C 2
Collector-Emitter Voltage VCEO 350 V TA = 25°C 2
Emitter-Base Voltage VEBO 5 V TA = 25°C 2
Continuous Base Current IB 25 mA TA = 25°C 2
Continuous Collector Current IC 500 mA TA = 25°C 2
Power Dissipation PD 300 mW TA = +25°C, Note 5 2
Thermal Resistance, Junction to Ambient RθJA 417 °C/W Note 5 2
Operating and Storage Temperature Range TJ, TSTG -65 150 °C 2
Collector-Base Breakdown Voltage V(BR)CBO 350 V IC = 100µA, IE = 0 2
Collector-Emitter Breakdown Voltage V(BR)CEO 350 V IC = 1.0mA, IB = 0 2
Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE = 10µA, IC = 0 2
Collector Cutoff Current ICBO 50 nA VCB = 250V, IE = 0 2
Emitter Cutoff Current IEBO 50 nA VCE = 5V, IC = 0 2
DC Current Gain hFE 20 IC = 1.0mA, VCE = 10V 2
DC Current Gain hFE 30 200 IC = 10mA, VCE = 10V 2
DC Current Gain hFE 15 IC = 100mA, VCE = 10V 2
Collector-Emitter Saturation Voltage VCE(SAT) 0.3 V IC = 10mA, IB = 1.0mA 2
Collector-Emitter Saturation Voltage VCE(SAT) 0.35 V IC = 20mA, IB = 2.0mA 2
Collector-Emitter Saturation Voltage VCE(SAT) 0.5 V IC = 30mA, IB = 3.0mA 2
Collector-Emitter Saturation Voltage VCE(SAT) 1 V IC = 50mA, IB = 5.0mA 2
Base-Emitter Saturation Voltage VBE(SAT) 0.75 V IC = 10mA, IB = 1.0mA 2
Base-Emitter Saturation Voltage VBE(SAT) 0.8 V IC = 20mA, IB = 2.0mA 2
Base-Emitter Saturation Voltage VBE(SAT) 0.9 V IC = 30mA, IB = 3.0mA 2
Base-Emitter On Voltage VBE(ON) 2 V IC = 100mA, VCE = 10V 2
Output Capacitance Cobo 7 pF VCB = 20V, f = 1.0MHz, IE = 0 2
Transition Frequency fT 50 MHz VCE = 10V, IC = 20mA 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts tin  Terminals: Finish, Matte Tin Plated Leads; Solderable per MIL-STD-202, Method 208 1

CAD (KiCad official)

  • Symbol: DN350T05-7
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: dn350t05-7-etched.step / dn350t05-7-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dn350t05-7.step / dn350t05-7.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (5 pp, sha256 31cf9a65435aec95, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF