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DN1509K1-G

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Microchip Tech MOSFETs, SOT-23-5. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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DN1509K1-G

Microchip Tech · MOSFETs · SOT-23-5

DN1509K1-G from Microchip Tech, in a SOT-23-5. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 NC unconnected Listed as NC (not connected) in Table 2-1 for the SOT-23 package; the datasheet states no function or limit for this pin.
2 DRAIN passive Drain terminal of the N-channel depletion-mode DMOS FET; drain-to-source breakdown voltage BVDSX is specified at 90 V minimum (VGS = -5 V, ID = 1.0 µA).
3 NC unconnected Listed as NC (not connected) in Table 2-1 for the SOT-23 package; the datasheet states no function or limit for this pin.
4 SOURCE passive Source terminal of the N-channel depletion-mode DMOS FET; saturated drain-to-source current IDSS is specified at 300 mA minimum (VGS = 0 V, VDS = 25 V).
5 GATE input Gate of the FET; gate-to-source voltage is rated ±20 V and gate-to-source off voltage VGS(OFF) is -1.8 V to -3.5 V at ID = 10 µA.

Key specifications

Parameter Value
Manufacturer Microchip Tech
Package SOT-23-5
Category Transistors/Thyristors
Pins 5

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-source breakdown voltage BVDSX 90 V VGS = -5V, ID = 1.0µA 3
Gate-to-source off voltage VGS(OFF) -1.8 -3.5 V ID = 10µA 3
VGS(OFF) change with temperature ∆VGS(OFF) -4.5 mV/°C VDS = 15V, ID= 10µA (Note 2) 3
Gate body leakage IGSS 100 nA VGS = ±20V, VDS = 0V 3
Drain-to-source leakage current ID(OFF) 1 µA VDS = BVDSX, VGS = -5.0V 3
Drain-to-source leakage current (VDS = 0.8 BVDSX, TA = 125°C) ID(OFF) 1 mA VDS = 0.8 BVDSX, VGS = -5.0V, TA= 125°C (Note 2) 3
Saturated drain-to-source current IDSS 300 540 mA VGS = 0V, VDS = 25V 3
Static drain-to-source on-state resistance RDS(ON) 3.2 6 Ω VGS = 0V, ID= 200mA 3
Change in RDS(ON) with temperature ∆RDS(ON) 1.1 %/°C VGS = 0V, ID= 200mA (Note 2) 3
Forward transconductance GFS 200 mmho VDS = 10V, ID= 200mA 3
Input capacitance CISS 70 150 pF VGS = -10V, VDS = 25V, f = 1MHz 3
Common source output capacitance COSS 20 40 pF VGS = -10V, VDS = 25V, f = 1MHz 3
Reverse transfer capacitance CRSS 6 15 pF VGS = -10V, VDS = 25V, f = 1MHz 3
Turn-on delay time td(ON) 12 30 ns VDD = 25V, ID = 100mA, RGEN = 25Ω 3
Rise time tr 16 45 ns VDD = 25V, ID = 100mA, RGEN = 25Ω 3
Turn-off delay time td(OFF) 15 45 ns VDD = 25V, ID = 100mA, RGEN = 25Ω 3
Fall time tf 25 60 ns VDD = 25V, ID = 100mA, RGEN = 25Ω 3
Diode forward voltage drop VSD 1.8 V VGS = -5.0V, ISD= 500mA (Note 1) 3
Gate-to-source voltage -20 20 V 3
Operating and storage temperature -55 150 °C 3
Typical thermal resistance, junction to ambient (5-lead SOT-23) θja 253 °C/W 5-lead SOT-23 package; mounted per Table 1-2 (typical) 4
ID continuous (5-lead SOT-23) ID 200 mA Continuous; limited by max rated TJ 4
ID pulsed (5-lead SOT-23) ID 500 mA Pulsed 4
Power dissipation (5-lead SOT-23) 0.49 W @TA = 2.5°C (as printed) 4
IDR (5-lead SOT-23) IDR 200 mA 4
IDRM (5-lead SOT-23) IDRM 500 mA 4

CAD (KiCad official)

  • Symbol: DN1509K1-G
  • Footprint: Package_TO_SOT_SMD:SOT-23-5
  • 3D model: SOT-23-5 (KiCad packages3D, STEP)
  • 3D model files: dn1509k1-g-etched.step / dn1509k1-g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dn1509k1-g.step / dn1509k1-g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Microchip Tech datasheet (12 pp, sha256 4a9f4b9fbcbcca2f, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF