component
DMZ6005E
Public Made by Adomby adom
ARK micro MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 8d ago |
| viewers | 8d ago |
| dmz6005e-etched.glb | 8d ago |
| dmz6005e-etched.step | 8d ago |
| dmz6005e-hero.glb | 8d ago |
| dmz6005e-hero.overlay.json | 8d ago |
| dmz6005e.glb | 8d ago |
| dmz6005e.kicad_mod | 8d ago |
| dmz6005e.kicad_sym | 8d ago |
| dmz6005e.lbr | 8d ago |
| dmz6005e.step | 8d ago |
| package.json | 8d ago |
| page.json | 8d ago |
| README.md | 8d ago |
DMZ6005E
ARK micro · MOSFETs · SOT-23
DMZ6005E from ARK micro, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; depletion-mode device is normally on at VGS=0V, with gate-to-source cut-off voltage of -3.3V to -1.5V and a maximum gate-to-source voltage of ±20V. |
| 2 | S | passive | Source terminal of the depletion-mode N-channel MOSFET, with body diode to drain (VSD max 1.2V). |
| 3 | D | passive | Drain; rated 600V drain-to-source (VDSX), 0.02A continuous and 0.08A pulsed drain current. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ARK micro |
| Package | SOT-23 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSX | 600 | V | Footnote [1]: TJ=+25℃ to +150℃ | 1 | ||
| Drain-to-Gate Voltage | VDGX | 600 | V | Footnote [1]: TJ=+25℃ to +150℃ | 1 | ||
| Continuous Drain Current | ID | 0.02 | A | 1 | |||
| Pulsed Drain Current | IDM | 0.08 | A | Footnote [2]: repetitive rating, pulse width limited by maximum junction temperature | 1 | ||
| Power Dissipation | PD | 0.5 | W | 1 | |||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Soldering Temperature | TL | 300 | ℃ | Distance of 1.6mm from case for 10 seconds | 1 | ||
| Operating and Storage Temperature Range | TJ and TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 250 | K/W | 1 | |||
| Drain-to-Source Breakdown Voltage | BVDSX | 600 | V | VGS=-5V, ID=250µA | 2 | ||
| Drain-to-Source Leakage Current | ID(OFF) | 0.1 | µA | VDS=600V，VGS= -5V | 2 | ||
| Drain-to-Source Leakage Current | ID(OFF) | 10 | µA | VDS=600V，VGS= -5V, TJ=125℃ | 2 | ||
| Gate-to-Source Leakage Current | IGSS | 20 | uA | VGS=+20V, VDS=0V | 2 | ||
| Gate-to-Source Leakage Current | IGSS | -20 | uA | VGS=-20V, VDS=0V | 2 | ||
| Saturated Drain-to-Source Current | IDSS | 5 | 25 | mA | VGS=0V, VDS=25V | 2 | |
| Static Drain-to-Source On-Resistance | RDS(ON) | 500 | 700 | Ω | VGS=0V，ID=3mA [3] | 2 | |
| Gate-to-Source Cut-off Voltage | VGS(OFF) | -3.3 | -1.5 | V | VDS =3V, ID=8µA | 2 | |
| Diode Forward Voltage | VSD | 1.2 | V | ISD =3.0 mA, VGS = -10 V | 3 |
CAD (KiCad official)
- Symbol:
DMZ6005E - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
dmz6005e-etched.step/dmz6005e-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dmz6005e.step/dmz6005e.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ARK micro datasheet (6 pp, sha256
5ad5cbcbdd548ed2, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).