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DMX5530E

Public Made by Adom

by adom

ARK micro MOSFETs, SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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DMX5530E

ARK micro · MOSFETs · SOT-89

DMX5530E from ARK micro, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the depletion-mode (normally on) MOSFET; gate-to-source voltage is rated ±20 V with a cut-off voltage VGS(OFF) of -1.5 to -3.8 V.
2 D passive Drain (centre lead, connected to the tab); drain-to-source and drain-to-gate voltage are rated 550 V, with continuous drain current of 0.09 A.
3 S passive Source terminal of the MOSFET; RDS(ON) is 70 Ω max at VGS=0 V, ID=50 mA.

Key specifications

Parameter Value
Manufacturer ARK micro
Package SOT-89
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Voltage VDSX 550 V TJ=+25℃ to +150℃ (note [1]) 1
Drain-to-Gate Voltage VDGX 550 V TJ=+25℃ to +150℃ (note [1]) 1
Continuous Drain Current ID 0.09 A 1
Pulsed Drain Current IDM 0.36 A Repetitive rating, pulse width limited by maximum junction temperature (note [2]) 1
Power Dissipation PD 1 W 1
Gate-to-Source Voltage VGS -20 20 V 1
Soldering Temperature TL 300 ℃ Distance of 1.6mm from case for 10 seconds 1
Operating and Storage Temperature Range TJ and TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Case RθJC 125 ℃/W 1
Drain-to-Source Breakdown Voltage BVDSX 550 V VGS=-10V, ID=250µA 2
Drain-to-Source Leakage Current ID(OFF) 2 µA VDS=550V，VGS=-10V 2
Gate-to-Source Leakage Current (VGS=+20V) IGSS 10 µA VGS=+20V, VDS=0V 2
Gate-to-Source Leakage Current (VGS=-20V) IGSS -10 µA VGS=-20V, VDS=0V 2
Static Drain-to-Source On-Resistance RDS(ON) 70 Ω VGS=0V, ID=50mA[3] 2
Gate-to-Source Cut-off Voltage VGS(OFF) -1.5 -3.8 V VDS=3V, ID=8µA 2
Diode Forward Voltage VSD 1.5 V ISD=50mA[3], VGS=-10V 2

CAD (KiCad official)

  • Symbol: DMX5530E
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89 (KiCad packages3D, STEP)
  • 3D model files: dmx5530e-etched.step / dmx5530e-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmx5530e.step / dmx5530e.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ARK micro datasheet (5 pp, sha256 413845ec4161a4b3, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF