main
Download ZIP Propose a change
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 8d ago
viewers dmx4022e: viewers · Ray 8d ago
dmx4022e-etched.glb Publish 0.1.0 · Ray 8d ago
dmx4022e-etched.step dmx4022e: factory component page (tier=lcsc) · Ray 8d ago
dmx4022e-hero.glb dmx4022e: hero GLB from the etched model (keeps the MPN mark) · Ray 8d ago
dmx4022e-hero.overlay.json Publish 0.1.0 · Ray 8d ago
dmx4022e.glb Publish 0.1.0 · Ray 8d ago
dmx4022e.kicad_mod Publish 0.1.0 · Ray 8d ago
dmx4022e.kicad_sym Publish 0.1.0 · Ray 8d ago
dmx4022e.lbr Publish 0.1.0 · Ray 8d ago
dmx4022e.step Publish 0.1.0 · Ray 8d ago
package.json Publish 0.1.0 · Ray 8d ago
page.json Set visibility: public · Ray 8d ago
README.md Publish 0.1.0 · Ray 8d ago

DMX4022E

ARK micro · MOSFETs · SOT-89

DMX4022E from ARK micro, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; depletion-mode device is normally on at VGS=0V, gate-to-source cut-off voltage VGS(OFF) is -3.3V to -1.5V and the absolute maximum VGS is ±20V.
2 D passive Drain; drain-to-source voltage rating VDSX is 400V and continuous drain current is 0.20A for the SOT-89 part.
3 S passive Source; current return terminal of the N-channel depletion-mode MOSFET, with gate-to-source ESD rating of 3000V (HBM).

Key specifications

Parameter Value
Manufacturer ARK micro
Package SOT-89
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Voltage VDSX 400 V TJ=+25℃ to +150℃ 1
Drain-to-Gate Voltage VDGX 400 V TJ=+25℃ to +150℃ 1
Continuous Drain Current ID 0.2 A 1
Pulsed Drain Current IDM 0.8 A Repetitive rating, pulse width limited by maximum junction temperature 1
Power Dissipation PD 1 W 1
Derating Factor above 25℃ 0.008 W/℃ above 25℃ 1
Gate-to-Source Voltage VGS -20 20 V 1
Gate Source ESD VESD 3000 V HBM, JEDEC EIA/JESD22-A114 1
Source to Gate ESD VESD 3000 V HBM, JEDEC EIA/JESD22-A114 1
Soldering Temperature TL 300 ℃ Distance of 1.6mm from case for 10 seconds 1
Operating and Storage Temperature Range TJ and TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Case RθJC 125 ℃/W 1
Drain-to-Source Breakdown Voltage BVDSX 400 V VGS=-5V, ID=250µA 2
Drain-to-Source Leakage Current ID(OFF) 1 µA VDS=400V,VGS=-5V 2
Drain-to-Source Leakage Current ID(OFF) 1 mA VDS=400V,VGS=-5V TJ=125℃ 2
Gate-to-Source Leakage Current IGSS 5 µA VGS=+20V, VDS=0V 2
Gate-to-Source Leakage Current IGSS -5 µA VGS=-20V, VDS=0V 2
Saturated Drain-to-Source Current IDSS 0.2 A VGS=0V, VDS=25V 2
Static Drain-to-Source On-Resistance RDS(ON) 12 25 Ω VGS=0V,ID=200mA 2
Static Drain-to-Source On-Resistance RDS(ON) 11 23 Ω VGS=10V,ID=200mA 2
Gate-to-Source Cut-off Voltage VGS(OFF) -3.3 -1.5 V VDS=3V, ID=8µA 2
Diode Forward Voltage VSD 0.8 1.5 V ISD=200mA, VGS=-10V 2

CAD (KiCad official)

  • Symbol: DMX4022E
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89 (KiCad packages3D, STEP)
  • 3D model files: dmx4022e-etched.step / dmx4022e-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmx4022e.step / dmx4022e.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ARK micro datasheet (7 pp, sha256 f51e93328bf2294d, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF