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DMX0652E

Public Made by Adom

by adom

ARK micro MOSFETs, SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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DMX0652E

ARK micro · MOSFETs · SOT-89

DMX0652E from ARK micro, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate, with an absolute maximum gate-to-source voltage of ±20 V; the depletion-mode device is normally on at VGS=0 V and cuts off at VGS(OFF) of -3.5 V to -1.5 V.
2 D passive Drain, connected to the package tab, rated for 60 V drain-to-source (VDSX) and 1 A continuous (4 A pulsed) drain current.
3 S passive Source terminal of the N-channel depletion-mode MOSFET, the reference for the gate and drain voltages.

Key specifications

Parameter Value
Manufacturer ARK micro
Package SOT-89
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Voltage VDSX 60 V TJ=+25℃ to +150℃ 1
Continuous Drain Current ID 1 A TA=25℃ 1
Pulsed Drain Current IDM 4 A Repetitive rating, pulse width limited by maximum junction temperature 1
Power Dissipation PD 1 W TA=25℃ 1
Gate-to-Source Voltage VGS -20 20 V TA=25℃ 1
Soldering Temperature TL 300 ℃ Distance of 1.6mm from case for 10 seconds 1
Operating and Storage Temperature Range TJ & TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Case RθJC 125 ℃/W 1
Drain-to-Source Breakdown Voltage BVDSX 60 V VGS=-10V, ID=250µA 2
Drain-to-Source Leakage Current ID(OFF) 10 µA VDS=60V, VGS=-10V 2
Gate-to-Source Leakage Current (positive) IGSS 20 µA VGS=20V, VDS=0V 2
Gate-to-Source Leakage Current (negative) IGSS -20 µA VGS=-20V, VDS=0V 2
Saturated Drain-to-Source Current IDSS 500 mA VGS=0V, VDS=25V 2
Static Drain-to-Source On-Resistance RDS(ON) 0.5 1.5 Ω VGS=0V, ID=200mA [3] 2
Gate-to-Source Cut-off Voltage VGS(OFF) -3.5 -1.5 V VDS=3V, ID=8µA 2
Diode Forward Voltage VSD 1.2 V ISD=200mA, VGS=-10V 3
Forward Transconductance gfs 1.28 S VDS=20V, ID=200mA 2
Input Capacitance Ciss 543.3 pF VGS=-10V, VDS=25V, f=1.0MHz 2
Output Capacitance Coss 96.5 pF VGS=-10V, VDS=25V, f=1.0MHz 2
Reverse Transfer Capacitance Crss 3.2 pF VGS=-10V, VDS=25V, f=1.0MHz 2
Total Gate Charge Qg 11.3 nC VGS=-10V~10V, VDS=30V, ID=200mA 2
Gate-to-Source Charge Qgs 4.3 nC VGS=-10V~10V, VDS=30V, ID=200mA 2
Gate-to-Drain (Miller) Charge Qgd 1 nC VGS=-10V~10V, VDS=30V, ID=200mA 2
Turn-on Delay Time td(on) 18.5 ns VGS=-10V~0V, VDD=30V, ID=200mA, RG=10Ω 2
Rise Time trise 4.2 ns VGS=-10V~0V, VDD=30V, ID=200mA, RG=10Ω 2
Turn-off Delay Time td(off) 21.5 ns VGS=-10V~0V, VDD=30V, ID=200mA, RG=10Ω 2
Fall Time tfall 50.6 ns VGS=-10V~0V, VDD=30V, ID=200mA, RG=10Ω 2

CAD (KiCad official)

  • Symbol: DMX0652E
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89 (KiCad packages3D, STEP)
  • 3D model files: dmx0652e-etched.step / dmx0652e-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmx0652e.step / dmx0652e.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ARK micro datasheet (7 pp, sha256 3f68f817234618b5, retrieved 2026-10-30, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF