main
Ray Set visibility: public d2db7a6
{
  "schema_version": 1,
  "type": "component",
  "slug": "dmth8012lpsw-13",
  "title": "DMTH8012LPSW-13",
  "brief": "Diodes Incorporated MOSFETs, DFN-8(4.9x5.8). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
  "license": "CC-BY-SA-4.0",
  "tags": [
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    "transistors",
    "dmth8012lpsw-13",
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  "component": {
    "mpn": "DMTH8012LPSW-13",
    "manufacturer": "Diodes Incorporated",
    "package": "DFN-8(4.9x5.8)",
    "pin_count": 9,
    "category": "Transistors",
    "subcategory": "MOSFETs",
    "datasheet": "https://www.diodes.com/assets/Datasheets/DMTH8012LPSW-13.pdf",
    "parts": {
      "symbol": "dmth8012lpsw-13.kicad_sym",
      "footprint": "dmth8012lpsw-13.kicad_mod",
      "model_3d": "dmth8012lpsw-13-hero.glb",
      "model_3d_plain": "dmth8012lpsw-13-etched.glb",
      "model_3d_step": "dmth8012lpsw-13-etched.step",
      "model_3d_step_plain": "dmth8012lpsw-13.step",
      "lbr": "dmth8012lpsw-13.lbr"
    },
    "distributor_links": {
      "lcsc": "C460712",
      "digikey": "31-DMTH8012LPSW-13TR-ND",
      "mouser": "621-DMTH8012LPSW-13"
    },
    "distributor_check": {
      "checked_at": "2026-11-07T00:55:40Z",
      "source": "Component Ocean /api/assign-pns",
      "digikey": {
        "pn": "31-DMTH8012LPSW-13TR-ND",
        "status": "found"
      },
      "mouser": {
        "pn": "621-DMTH8012LPSW-13",
        "status": "found"
      }
    },
    "pins": [
      {
        "number": "1",
        "name": "S",
        "type": "passive",
        "description": "Source of the N-channel MOSFET, with VDSS rated 80V and continuous ID of 53.7A at TC = +25°C for the device."
      },
      {
        "number": "2",
        "name": "S",
        "type": "passive",
        "description": "Source of the N-channel MOSFET, with VDSS rated 80V and continuous ID of 53.7A at TC = +25°C for the device."
      },
      {
        "number": "3",
        "name": "S",
        "type": "passive",
        "description": "Source of the N-channel MOSFET, with VDSS rated 80V and continuous ID of 53.7A at TC = +25°C for the device."
      },
      {
        "number": "4",
        "name": "G",
        "type": "input",
        "description": "Gate of the N-channel MOSFET, with VGSS rated ±20V and a threshold VGS(TH) of 1V to 3V at ID = 250μA."
      },
      {
        "number": "5",
        "name": "D",
        "type": "passive",
        "description": "Drain of the N-channel MOSFET, connected to the exposed drain pad, with VDSS rated 80V and pulsed IDM of 80A."
      },
      {
        "number": "6",
        "name": "D",
        "type": "passive",
        "description": "Drain of the N-channel MOSFET, connected to the exposed drain pad, with VDSS rated 80V and pulsed IDM of 80A."
      },
      {
        "number": "7",
        "name": "D",
        "type": "passive",
        "description": "Drain of the N-channel MOSFET, connected to the exposed drain pad, with VDSS rated 80V and pulsed IDM of 80A."
      },
      {
        "number": "8",
        "name": "D",
        "type": "passive",
        "description": "Drain of the N-channel MOSFET, connected to the exposed drain pad, with VDSS rated 80V and pulsed IDM of 80A."
      },
      {
        "number": "9",
        "name": "EP",
        "type": "passive",
        "description": "Exposed pad (from the footprint; not named in the datasheet pin table)."
      }
    ],
    "provenance": {
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        "primary_model": "claude-sonnet-5-5",
        "primary_mode": "text",
        "consensus_model": "claude-sonnet-5-5",
        "consensus": "agreed",
        "guards": "pin_guards 0.1: passed",
        "guard_notes": [
          "extractor flagged: The pin-configuration drawing in the extracted text lists only the labels S, D, D, G, D, D, S, S, wi; The MPN DMTH8012LPSW-13 is listed for two package variants, PowerDI5060-8 (SWP) Type Q and PowerDI50; The exposed drain pad (the 'exposed drain pad' in note 6) is not given a pin number. It is presumabl"
        ],
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        "at": "2026-11-07T00:55:32"
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        "pages": 9,
        "sha256": "e4c444aa8e848e27",
        "source_tier": "mfr"
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      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 9,
        "described": 9,
        "cites_pages": true,
        "refuses_to_fabricate": true
      }
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        "units": "mm",
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        "seat": "z = 0",
        "extents_mm": [
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        "centre_offset_mm": 0,
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        "sha256": "13e5a2a05f78c2a0952534b2fb187d0be154d366a431374e398c7e2032779f1b",
        "checked": "2026-11-07",
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        "checked": "2026-11-07",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
      }
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  },
  "metadata": {
    "specs": {
      "Manufacturer": "Diodes Incorporated",
      "Package": "DFN-8(4.9x5.8)",
      "Category": "Transistors",
      "Pins": "9"
    },
    "appearance": {
      "contacts": {
        "quote": "• Terminal Finish – Matte Tin Annealed over Copper Leadframe;",
        "page": 1,
        "doc": "ds.pdf",
        "material": "Copper",
        "plating": "tin"
      },
      "housing": {
        "quote": "IF = 12A, di/dt = 100A/μs Body Diode Reverse Recovery Charge QRR — 34.6 — nC Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plat",
        "page": 3,
        "doc": "ds.pdf",
        "material": "PC"
      },
      "version": 1,
      "datasheet_sha256": "e4c444aa8e848e271791697731aa77c6f1975fbfe16492f06889a61507aa1f03"
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          "conditions": "10μs Pulse, Duty Cycle = 1%",
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          "name": "Maximum Continuous Body Diode Forward Current",
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        {
          "name": "Avalanche Current",
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          "unit": "A",
          "min": null,
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          "max": 11.6,
          "conditions": "L = 0.1mH",
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        {
          "name": "Avalanche Energy",
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          "unit": "mJ",
          "min": null,
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        {
          "name": "Total Power Dissipation",
          "symbol": "PD",
          "kind": "thermal",
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          "conditions": "TA = +25°C (Note 5)",
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        {
          "name": "Thermal Resistance, Junction to Ambient",
          "symbol": "RJA",
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          "name": "Thermal Resistance, Junction to Case",
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        {
          "name": "Operating and Storage Temperature Range",
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          "min": -55,
          "typ": null,
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        {
          "name": "Drain-Source Breakdown Voltage",
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        {
          "name": "Zero Gate Voltage Drain Current",
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          "min": 1,
          "typ": null,
          "max": 3,
          "conditions": "VDS = VGS, ID = 250μA",
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          "source": "datasheet"
        },
        {
          "name": "Static Drain-Source On-Resistance",
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          "kind": "electrical",
          "unit": "mΩ",
          "min": null,
          "typ": 14,
          "max": 17,
          "conditions": "VGS = 10V, ID = 12A",
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          "kind": "electrical",
          "unit": "mΩ",
          "min": null,
          "typ": 16.5,
          "max": 23.5,
          "conditions": "VGS = 4.5V, ID = 6A",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Diode Forward Voltage",
          "symbol": "VSD",
          "kind": "electrical",
          "unit": "V",
          "min": null,
          "typ": 0.9,
          "max": 1.2,
          "conditions": "VGS = 0V, IS = 20A",
          "source_page": 3,
          "source": "datasheet"
        }
      ]
    }
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