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DMTH43M8LK3Q-13

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Diodes Incorporated MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsdmth43m8lk3q-13factory-2.0.0extractor-text

Verified DMTH43M8LK3Q-13

by Ray · last 5 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

5 Nov 2026RayPublished by the parts factory: tier mfr, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: DMTH43M8LK3Q-13 · TO-252 · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 7-page datasheet
  • ✓distributor: lcsc C5248946, digikey 31-DMTH43M8LK3Q-13TR-ND, mouser 621-DMTH43M8LK3Q-13
  • ✓family: TO-252-2
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-9wn_lawy/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • ✓package_fit: height and body within the datasheet's package drawing (datasheet p.6)
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓symbol_text: no pin names collide
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ dmth43m8lk3q-13.kicad_sym✓ dmth43m8lk3q-13.kicad_mod✓ dmth43m8lk3q-13.step
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DMTH43M8LK3Q-13

Diodes Incorporated · MOSFETs · TO-252

DMTH43M8LK3Q-13 from Diodes Incorporated, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; pin-out top view shows G at the left lead, with gate-source voltage rated ±20 V and threshold 1 V to 2.5 V.
2 D passive Drain; center lead (shortened) is connected to the exposed drain tab, with drain-source voltage rated 40 V.
3 S passive Source; right lead in the top-view pin-out, with continuous body diode forward current of 70 A.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 40 V 2
Gate-Source Voltage VGSS -20 20 V Printed as ±20 V 2
Continuous Drain Current ID 17.6 A VGS = 10V, TA = +25°C (Note 6) 2
Continuous Drain Current ID 12.5 A VGS = 10V, TA = +100°C (Note 6) 2
Continuous Drain Current ID 100 A VGS = 10V, TC = +25°C (Note 7) 2
Continuous Drain Current ID 80 A VGS = 10V, TC = +100°C (Note 7) 2
Pulsed Drain Current IDM 150 A 10µs Pulse, Duty Cycle = 1% 2
Maximum Continuous Body Diode Forward Current IS 70 A Note 6 2
Pulsed Body Diode Forward Current ISM 150 A 10µs Pulse, Duty Cycle = 1% 2
Avalanche Current IAS 13.2 A L = 1mH 2
Avalanche Energy EAS 87 mJ L = 1mH 2
Total Power Dissipation PD 3.1 W Note 6 2
Total Power Dissipation PD 88 W Note 7 2
Thermal Resistance, Junction to Ambient RθJA 47 °C/W Note 6 2
Thermal Resistance, Junction to Case RθJC 1.7 °C/W Note 7 2
Operating and Storage Temperature Range TJ, TSTG -55 175 °C 2
Drain-Source Breakdown Voltage BVDSS 40 V VGS = 0V, ID = 1mA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS = 32V, VGS = 0V 2
Gate-Source Leakage IGSS -100 100 nA VGS = ±20V, VDS = 0V; printed as ±100 nA 2
Gate Threshold Voltage VGS(TH) 1 2.5 V VDS = VGS, ID = 250μA 2
Static Drain-Source On-Resistance RDS(ON) 2.9 3.6 mΩ VGS = 10V, ID = 20A 2
Static Drain-Source On-Resistance RDS(ON) 4.3 5.2 mΩ VGS = 5V, ID = 15A 2
Diode Forward Voltage VSD 1.2 V VGS = 0V, IS = 20A 2
Input Capacitance Ciss 2693 pF VDS = 20V, VGS = 0V, f = 1MHz 2
Output Capacitance Coss 1172 pF VDS = 20V, VGS = 0V, f = 1MHz 2
Reverse Transfer Capacitance Crss 52 pF VDS = 20V, VGS = 0V, f = 1MHz 2
Gate Resistance Rg 2.54 Ω VDS = 0V, VGS = 0V, f = 1MHz 2
Total Gate Charge (VGS = 10V) Qg 38.5 nC VDS = 20V, ID = 20A 2
Total Gate Charge (VGS = 4.5V) Qg 17.6 nC VDS = 20V, ID = 20A 2
Gate-Source Charge Qgs 6.9 nC 2
Gate-Drain Charge Qgd 6.9 nC 2
Turn-On Delay Time tD(ON) 5.2 ns VDD = 20V, VGS = 10V, ID = 20A, RG = 1.6Ω 2
Turn-On Rise Time tR 5.7 ns VDD = 20V, VGS = 10V, ID = 20A, RG = 1.6Ω 2
Turn-Off Delay Time tD(OFF) 23.5 ns VDD = 20V, VGS = 10V, ID = 20A, RG = 1.6Ω 2
Turn-Off Fall Time tF 11 ns VDD = 20V, VGS = 10V, ID = 20A, RG = 1.6Ω 2
Body Diode Reverse Recovery Time tRR 35.4 ns IF = 15A, di/dt = 100A/μs 2
Body Diode Reverse Recovery Charge QRR 32.9 nC IF = 15A, di/dt = 100A/μs 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
housing PC IF = 15A, di/dt = 100A/μs Body Diode Reverse Recovery Charge QRR, 32.9, nC Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 2
contacts Copper tin  Terminal Finish - Matte Tin Annealed over Copper Leadframe; 1

CAD (KiCad official)

  • Symbol: DMTH43M8LK3Q-13
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: dmth43m8lk3q-13-etched.step / dmth43m8lk3q-13-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmth43m8lk3q-13.step / dmth43m8lk3q-13.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (7 pp, sha256 395c90d41f99b781, retrieved 2026-11-05, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF