component
DMTH10H025LPSQ
Public Made by Adomby adom
Leiditech MOSFETs, DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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DMTH10H025LPSQ
Leiditech · MOSFETs · DFN-8(5x6)
DMTH10H025LPSQ from Leiditech, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET, tied to the other source pins, with continuous drain current rated 40 A at TC=25 °C. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, tied to the other source pins, with continuous drain current rated 40 A at TC=25 °C. |
| 3 | S | passive | Source terminal of the N-channel MOSFET, tied to the other source pins, with continuous drain current rated 40 A at TC=25 °C. |
| 4 | G | input | Gate terminal of the N-channel MOSFET with a maximum gate-source voltage of ±20 V and a gate threshold of 1.0 to 2.5 V. |
| 5 | D | passive | Drain terminal of the N-channel MOSFET, tied to the other drain pins, with a drain-source voltage rating of 100 V. |
| 6 | D | passive | Drain terminal of the N-channel MOSFET, tied to the other drain pins, with a drain-source voltage rating of 100 V. |
| 7 | D | passive | Drain terminal of the N-channel MOSFET, tied to the other drain pins, with a drain-source voltage rating of 100 V. |
| 8 | D | passive | Drain terminal of the N-channel MOSFET, tied to the other drain pins, with a drain-source voltage rating of 100 V. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Leiditech |
| Package | DFN-8(5x6) |
| Category | Triode/MOS Tube/Transistor |
| Pins | 9 |
CAD (KiCad official)
- Symbol:
DMTH10H025LPSQ - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
- 3D model files:
dmth10h025lpsq-etched.step/dmth10h025lpsq-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dmth10h025lpsq.step/dmth10h025lpsq.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Leiditech datasheet (6 pp, sha256
fc23aadf1284ada9, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# DMTH10H025LPSQ
**Leiditech** · MOSFETs · DFN-8(5x6)
DMTH10H025LPSQ from Leiditech, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET, tied to the other source pins, with continuous drain current rated 40 A at TC=25 °C. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, tied to the other source pins, with continuous drain current rated 40 A at TC=25 °C. |
| 3 | S | passive | Source terminal of the N-channel MOSFET, tied to the other source pins, with continuous drain current rated 40 A at TC=25 °C. |
| 4 | G | input | Gate terminal of the N-channel MOSFET with a maximum gate-source voltage of ±20 V and a gate threshold of 1.0 to 2.5 V. |
| 5 | D | passive | Drain terminal of the N-channel MOSFET, tied to the other drain pins, with a drain-source voltage rating of 100 V. |
| 6 | D | passive | Drain terminal of the N-channel MOSFET, tied to the other drain pins, with a drain-source voltage rating of 100 V. |
| 7 | D | passive | Drain terminal of the N-channel MOSFET, tied to the other drain pins, with a drain-source voltage rating of 100 V. |
| 8 | D | passive | Drain terminal of the N-channel MOSFET, tied to the other drain pins, with a drain-source voltage rating of 100 V. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Leiditech |
| Package | DFN-8(5x6) |
| Category | Triode/MOS Tube/Transistor |
| Pins | 9 |
## CAD (KiCad official)
- Symbol: `DMTH10H025LPSQ`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
- 3D model files: `dmth10h025lpsq-etched.step` / `dmth10h025lpsq-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `dmth10h025lpsq.step` / `dmth10h025lpsq.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Leiditech datasheet](docs/dmth10h025lpsq-datasheet.pdf) (6 pp, sha256 `fc23aadf1284ada9`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/dmth10h025lpsq-datasheet.pdf)