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DMT8012LK3-13

Diodes Incorporated · MOSFETs · TO-252

DMT8012LK3-13 from Diodes Incorporated, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; the gate-source voltage is rated at ±20V, with RDS(ON) specified at VGS = 10V and 4.5V and a threshold of 1V to 3V.
2 D passive Drain; rated for VDSS of 80V and continuous drain current of 44A at TC = +25°C, and connected to the exposed tab.
3 S passive Source; the body diode runs from source to drain, with a continuous forward current of 3A and a pulsed current of 80A.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package TO-252
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 80 V 2
Gate-Source Voltage VGSS -20 20 V 2
Continuous Drain Current ID 44 A VGS = 10V, TC = +25°C 2
Continuous Drain Current ID 28 A VGS = 10V, TC = +100°C 2
Pulsed Drain Current IDM 80 A 10µs Pulse, Duty Cycle = 1% 2
Maximum Continuous Body Diode Forward Current IS 3 A Note 5 2
Pulsed Drain Current (body diode) ISM 80 A 10µs Pulse, Duty Cycle = 1% 2
Avalanche Current IAS 11.6 A L=0.1mH 2
Avalanche Energy EAS 10.2 mJ L=0.1mH 2
Total Power Dissipation PD 2.7 W Note 5 2
Total Power Dissipation PD 50 W Note 6 2
Thermal Resistance, Junction to Ambient RθJA 47 °C/W Note 5 2
Thermal Resistance, Junction to Case RθJC 2.5 °C/W Note 6 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
Drain-Source Breakdown Voltage BVDSS 80 V VGS = 0V, ID = 1mA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS = 64V, VGS = 0V 2
Gate-Source Leakage IGSS -100 100 nA VGS = ±20V, VDS = 0V 2
Gate Threshold Voltage VGS(TH) 1 3 V VDS = VGS, ID = 250μA 2
Static Drain-Source On-Resistance RDS(ON) 12 17 mΩ VGS = 10V, ID = 12A 2
Static Drain-Source On-Resistance RDS(ON) 18.2 22 mΩ VGS = 4.5V, ID = 6A 2
Diode Forward Voltage VSD 0.9 1.2 V VGS = 0V, IS = 25A 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
housing PC Body Diode Reverse Recovery Charge Qrr - 34.6 - nC Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate. 2
contacts Copper tin  Terminal Finish - Matte Tin Annealed over Copper Leadframe; 1

CAD (KiCad official)

  • Symbol: DMT8012LK3-13
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: dmt8012lk3-13-etched.step / dmt8012lk3-13-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmt8012lk3-13.step / dmt8012lk3-13.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (7 pp, sha256 f05e53db71bfd398, retrieved 2026-11-10, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF