component
DMT3020LSDQ-13
Public Made by Adomby adom
Diodes Incorporated MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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Contents
README
markdownDMT3020LSDQ-13
Diodes Incorporated · MOSFETs · SO-8
DMT3020LSDQ-13 from Diodes Incorporated, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (N-channel, VDSS 30V). |
| 2 | G1 | input | Gate of MOSFET 1; gate-source voltage limit ±20V, threshold 1.0 to 2.5V. |
| 3 | S2 | passive | Source of MOSFET 2 (N-channel, VDSS 30V). |
| 4 | G2 | input | Gate of MOSFET 2; gate-source voltage limit ±20V, threshold 1.0 to 2.5V. |
| 5 | D2 | passive | Drain of MOSFET 2; 30V drain-source rating, 16A continuous at TC=+25°C. |
| 6 | D2 | passive | Drain of MOSFET 2; 30V drain-source rating, 16A continuous at TC=+25°C. |
| 7 | D1 | passive | Drain of MOSFET 1; 30V drain-source rating, 16A continuous at TC=+25°C. |
| 8 | D1 | passive | Drain of MOSFET 1; 30V drain-source rating, 16A continuous at TC=+25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SO-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS = 0V, ID = 250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | TJ = +25°C, VDS = 24V, VGS = 0V | 2 | ||
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = ±20V, VDS = 0V | 2 | |
| Gate Threshold Voltage | VGS(TH) | 1 | 2.5 | V | VDS = VGS, ID = 250μA | 2 | |
| Static Drain-Source On-Resistance (VGS=10V) | RDS(ON) | 14 | 20 | mΩ | VGS = 10V, ID = 9.0A | 2 | |
| Static Drain-Source On-Resistance (VGS=4.5V) | RDS(ON) | 24 | 32 | mΩ | VGS = 4.5V, ID = 7.0A | 2 | |
| Diode Forward Voltage | VSD | 0.8 | 1.2 | V | VGS = 0V, IS = 2A | 2 | |
| Drain-Source Voltage | VDSS | 30 | V | TA = +25°C | 2 | ||
| Gate-Source Voltage | VGSS | -20 | 20 | V | TA = +25°C | 2 | |
| Continuous Drain Current, TC = +25°C | ID | 16 | A | VGS = 10V, Steady State, Note 6 | 2 | ||
| Continuous Drain Current, TC = +70°C | ID | 13 | A | VGS = 10V, Steady State, Note 6 | 2 | ||
| Maximum Body Diode Forward Current | IS | 8 | A | Note 6 | 2 | ||
| Pulsed Drain Current | IDM | 50 | A | 10μs Pulse, Duty Cycle = 1% | 2 | ||
| Pulsed Drain Body Diode Forward Current | ISM | 50 | A | 10μs Pulse, Duty Cycle = 1% | 2 | ||
| Avalanche Current | IAS | 13 | A | L = 0.1mH, Note 7 | 2 | ||
| Avalanche Energy | EAS | 8.5 | mJ | L = 0.1mH, Note 7 | 2 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| Total Power Dissipation (Note 5) | PD | 1 | W | TA = +25°C, minimum recommended pad layout | 2 | ||
| Thermal Resistance, Junction to Ambient (Note 5) | RθJA | 117 | °C/W | Steady State, Note 5 | 2 | ||
| Total Power Dissipation (Note 6) | PD | 1.5 | W | TA = +25°C, 1inch square copper plate | 2 | ||
| Thermal Resistance, Junction to Ambient (Note 6) | RθJA | 81 | °C/W | Steady State, Note 6 | 2 | ||
| Thermal Resistance, Junction to Case | RθJC | 20 | °C/W | Note 6 | 2 | ||
| Input Capacitance | Ciss | 393 | pF | VDS = 15V, VGS = 0V, f = 1.0MHz | 2 | ||
| Output Capacitance | Coss | 173 | pF | VDS = 15V, VGS = 0V, f = 1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 27 | pF | VDS = 15V, VGS = 0V, f = 1.0MHz | 2 | ||
| Gate Resistance | Rg | 1.1 | Ω | VDS = 0V, VGS = 0V, f = 1.0MHz | 2 | ||
| Total Gate Charge (VGS = 10V) | Qg | 7 | nC | VDD = 15V, ID = 9A | 2 | ||
| Total Gate Charge (VGS = 4.5V) | Qg | 3.6 | nC | VDD = 15V, ID = 9A | 2 | ||
| Gate-Source Charge | Qgs | 0.9 | nC | VDD = 15V, ID = 9A | 2 | ||
| Gate-Drain Charge | Qgd | 1.5 | nC | VDD = 15V, ID = 9A | 2 | ||
| Turn-On Delay Time | tD(ON) | 1.8 | ns | VDD = 15V, VGS = 10V, RG = 6Ω, ID = 9A | 2 | ||
| Turn-On Rise Time | tR | 1.9 | ns | VDD = 15V, VGS = 10V, RG = 6Ω, ID = 9A | 2 | ||
| Turn-Off Delay Time | tD(OFF) | 7.5 | ns | VDD = 15V, VGS = 10V, RG = 6Ω, ID = 9A | 2 | ||
| Turn-Off Fall Time | tF | 2.4 | ns | VDD = 15V, VGS = 10V, RG = 6Ω, ID = 9A | 2 | ||
| Reverse Recovery Time | tRR | 10 | ns | IF = 9A, dI/dt = 100A/μs | 2 | ||
| Reverse Recovery Charge | QRR | 2.6 | nC | IF = 9A, dI/dt = 100A/μs | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | Copper | tin | Terminals Connections Indicator: See Diagram Terminals: Finish - Matte Tin Annealed over Copper Lead | 1 |
CAD (KiCad official)
- Symbol:
DMT3020LSDQ-13 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
dmt3020lsdq-13-etched.step/dmt3020lsdq-13-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dmt3020lsdq-13.step/dmt3020lsdq-13.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (7 pp, sha256
38a4105315dffa10, retrieved 2026-10-22, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).