component
DMT20N60WS
Public Made by Adomby adom
DIYI Elec Tech MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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DMT20N60WS
DIYI Elec Tech · MOSFETs · TO-220
DMT20N60WS from DIYI Elec Tech, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal; gate-source voltage limited to ±30 V with threshold of 3 V min to 5 V max at VDS=VGS, ID=250uA. |
| 2 | Drain | passive | Drain terminal (also connected to the tab); drain-source voltage rated 630 V max with 600 V minimum breakdown and 14.0 A continuous at TC=25ºC. |
| 3 | Source | passive | Source terminal; continuous diode forward current is 16.0 A and RDS(ON) is 190 mΩ max at VGS=10V, ID=9.0A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | DIYI Elec Tech |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 600 | V | VGS=0V, ID=250uA | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | uA | VDS=600V, VGS=0V | 3 | ||
| Gate-Body Leakage Current Forward | IGSSF | 100 | nA | VGS=30V, VDS=0V | 3 | ||
| Gate-Body Leakage Current Reverse | IGSSR | -100 | nA | VGS=-30V, VDS=0V | 3 | ||
| Gate Threshold Voltage | VGS(TH) | 3 | 5 | V | VDS=VGS, ID=250uA | 3 | |
| Static Drain-Source On-Resistance | RDS(ON) | 170 | 190 | mΩ | VGS=10V, ID=9.0A | 3 | |
| Drain-Source Diode Forward Voltage | VSD | 0.81 | 1.1 | V | VGS=0V, ISD=7.0A | 3 | |
| Drain-Source Voltage | VDSS | 630 | V | 2 | |||
| Gate-Source Voltage | VGSS | -30 | 30 | V | 2 | ||
| Continuous Drain Current | ID | 14 | A | TC=25ºC | 2 | ||
| Continuous Drain Current | ID | 7.1 | A | TC=125ºC | 2 | ||
| Pulsed Drain Current | IDM | 43 | A | Note 2 | 2 | ||
| Avalanche Energy, Single Pulse | EAS | 190 | mJ | IAS=4.0A, VDD=60V, RG=25Ω, Starting TJ=25°C | 2 | ||
| Avalanche Energy, Repetitive | EAR | 0.2 | mJ | Note 2 | 2 | ||
| Avalanche Current, Repetitive | IAR | 4 | A | Note 2 | 2 | ||
| Continuous Diode Forward Current | IS | 16 | A | 2 | |||
| Diode Pulse Current | IS.PULSE | 43 | A | 2 | |||
| Operating Junction Temperature | TJ | 150 | ºC | 2 | |||
| Storage Temperature | TSTG | -55 | 150 | ºC | 2 | ||
| Lead Temperature (Soldering, 10 sec) | TLEAD | 300 | ºC | 2 | |||
| Gate Resistance | RG | 2 | Ω | f=1MHz, Open Drain | 3 | ||
| Input Capacitance | CISS | 1093 | pF | VDS=50V, VGS=0V, f=1MHz | 3 | ||
| Output Capacitance | COSS | 86.4 | pF | VDS=50V, VGS=0V, f=1MHz | 3 | ||
| Reverse Transfer Capacitance | CRSS | 10 | pF | VDS=50V, VGS=0V, f=1MHz | 3 | ||
| Gate Charge Total | Qg | 25.3 | nC | VDD=480V, ID=7.0A, VGS=0 to 10V | 3 |
CAD (KiCad official)
- Symbol:
DMT20N60WS - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
dmt20n60ws-etched.step/dmt20n60ws-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dmt20n60ws.step/dmt20n60ws.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: DIYI Elec Tech datasheet (11 pp, sha256
977fe3da73c7bc07, retrieved 2026-10-26, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# DMT20N60WS
**DIYI Elec Tech** · MOSFETs · TO-220
DMT20N60WS from DIYI Elec Tech, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal; gate-source voltage limited to ±30 V with threshold of 3 V min to 5 V max at VDS=VGS, ID=250uA. |
| 2 | Drain | passive | Drain terminal (also connected to the tab); drain-source voltage rated 630 V max with 600 V minimum breakdown and 14.0 A continuous at TC=25ºC. |
| 3 | Source | passive | Source terminal; continuous diode forward current is 16.0 A and RDS(ON) is 190 mΩ max at VGS=10V, ID=9.0A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | DIYI Elec Tech |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 600 | | | V | VGS=0V, ID=250uA | 3 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | uA | VDS=600V, VGS=0V | 3 |
| Gate-Body Leakage Current Forward | IGSSF | | | 100 | nA | VGS=30V, VDS=0V | 3 |
| Gate-Body Leakage Current Reverse | IGSSR | -100 | | | nA | VGS=-30V, VDS=0V | 3 |
| Gate Threshold Voltage | VGS(TH) | 3 | | 5 | V | VDS=VGS, ID=250uA | 3 |
| Static Drain-Source On-Resistance | RDS(ON) | | 170 | 190 | mΩ | VGS=10V, ID=9.0A | 3 |
| Drain-Source Diode Forward Voltage | VSD | | 0.81 | 1.1 | V | VGS=0V, ISD=7.0A | 3 |
| Drain-Source Voltage | VDSS | | | 630 | V | | 2 |
| Gate-Source Voltage | VGSS | -30 | | 30 | V | | 2 |
| Continuous Drain Current | ID | | | 14 | A | TC=25ºC | 2 |
| Continuous Drain Current | ID | | | 7.1 | A | TC=125ºC | 2 |
| Pulsed Drain Current | IDM | | | 43 | A | Note 2 | 2 |
| Avalanche Energy, Single Pulse | EAS | | | 190 | mJ | IAS=4.0A, VDD=60V, RG=25Ω, Starting TJ=25°C | 2 |
| Avalanche Energy, Repetitive | EAR | | | 0.2 | mJ | Note 2 | 2 |
| Avalanche Current, Repetitive | IAR | | | 4 | A | Note 2 | 2 |
| Continuous Diode Forward Current | IS | | | 16 | A | | 2 |
| Diode Pulse Current | IS.PULSE | | | 43 | A | | 2 |
| Operating Junction Temperature | TJ | | | 150 | ºC | | 2 |
| Storage Temperature | TSTG | -55 | | 150 | ºC | | 2 |
| Lead Temperature (Soldering, 10 sec) | TLEAD | | | 300 | ºC | | 2 |
| Gate Resistance | RG | | 2 | | Ω | f=1MHz, Open Drain | 3 |
| Input Capacitance | CISS | | 1093 | | pF | VDS=50V, VGS=0V, f=1MHz | 3 |
| Output Capacitance | COSS | | 86.4 | | pF | VDS=50V, VGS=0V, f=1MHz | 3 |
| Reverse Transfer Capacitance | CRSS | | 10 | | pF | VDS=50V, VGS=0V, f=1MHz | 3 |
| Gate Charge Total | Qg | | 25.3 | | nC | VDD=480V, ID=7.0A, VGS=0 to 10V | 3 |
## CAD (KiCad official)
- Symbol: `DMT20N60WS`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files: `dmt20n60ws-etched.step` / `dmt20n60ws-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `dmt20n60ws.step` / `dmt20n60ws.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [DIYI Elec Tech datasheet](docs/dmt20n60ws-datasheet.pdf) (11 pp, sha256 `977fe3da73c7bc07`, retrieved 2026-10-26, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/dmt20n60ws-datasheet.pdf)