component
DMT10H010LSS-13
Public Made by Adomby adom
Diodes Incorporated MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
DMT10H010LSS-13
Diodes Incorporated · MOSFETs · SO-8
DMT10H010LSS-13 from Diodes Incorporated, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET (internal body diode anode), shorted to the other source pins. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, shorted to the other source pins. |
| 3 | S | passive | Source terminal of the N-channel MOSFET, shorted to the other source pins. |
| 4 | G | input | Gate terminal; VGSS rating is ±20 V with threshold of 1.4 V min to 2.8 V max at 250 µA. |
| 5 | D | passive | Drain terminal; VDSS is 100 V, tied to the other drain pins. |
| 6 | D | passive | Drain terminal; VDSS is 100 V, tied to the other drain pins. |
| 7 | D | passive | Drain terminal; VDSS is 100 V, tied to the other drain pins. |
| 8 | D | passive | Drain terminal; VDSS is 100 V, tied to the other drain pins. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SO-8 |
| Category | Transistors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 100 | V | VGS = 0V, ID = 1mA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 80V, VGS = 0V | 2 | ||
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = 20V, VDS = 0V | 2 | |
| Gate Threshold Voltage | VGS(TH) | 1.4 | 1.9 | 2.8 | V | VDS = VGS, ID = 250µA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 8 | 9.5 | mΩ | VGS = 10V, ID = 13A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 9 | 12 | mΩ | VGS = 6V, ID = 13A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 10 | 14.5 | mΩ | VGS = 4.5V, ID = 5A | 2 | |
| Diode Forward Voltage | VSD | 0.8 | 1.3 | V | VGS = 0V, IS = 13A | 2 | |
| Drain-Source Voltage | VDSS | 100 | V | TA = +25°C | 2 | ||
| Gate-Source Voltage | VGSS | -20 | 20 | V | TA = +25°C | 2 | |
| Continuous Drain Current | ID | 11.5 | A | Steady state, TA = +25°C, VGS = 10V (Note 6) | 2 | ||
| Continuous Drain Current | ID | 9.2 | A | Steady state, TA = +70°C, VGS = 10V (Note 6) | 2 | ||
| Continuous Drain Current | ID | 29.5 | A | Steady state, TC = +25°C, VGS = 10V | 2 | ||
| Continuous Drain Current | ID | 18.6 | A | Steady state, TC = +100°C, VGS = 10V | 2 | ||
| Pulsed Drain Current | IDM | 75 | A | 10μs Pulse, Duty Cycle = 1% | 2 | ||
| Maximum Continuous Body Diode Forward Current | IS | 3 | A | Note 6 | 2 | ||
| Avalanche Current | IAS | 10 | A | L=0.3mH (Note 8) | 2 | ||
| Avalanche Energy | EAS | 15 | mJ | L=0.3mH (Note 8) | 2 | ||
| Total Power | PD | 1.4 | W | Note 5, TA = +25°C | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 90 | °C/W | Steady state, Note 5 | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 48.8 | °C/W | t<10s, Note 5 | 2 | ||
| Total Power Dissipation | PD | 1.9 | W | Note 6, TA = +25°C | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 66 | °C/W | Steady state, Note 6 | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 35.8 | °C/W | t<10s, Note 6 | 2 | ||
| Thermal Resistance, Junction to Case | RθJC | 10.1 | °C/W | Note 6 | 2 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| Input Capacitance | Ciss | 4166 | pF | VDS = 50V, VGS = 0V, f = 1MHz | 2 | ||
| Output Capacitance | Coss | 764 | pF | VDS = 50V, VGS = 0V, f = 1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 44 | pF | VDS = 50V, VGS = 0V, f = 1MHz | 2 | ||
| Gate Resistance | Rg | 2 | Ω | VDS = 0V, VGS = 0V, f = 1MHz | 2 | ||
| Total Gate Charge | Qg | 58.4 | nC | VDD = 50V, ID = 13A, VGS = 10V | 2 | ||
| Gate-Source Charge | Qgs | 11.4 | nC | VDD = 50V, ID = 13A, VGS = 10V | 2 | ||
| Gate-Drain Charge | Qgd | 14.2 | nC | VDD = 50V, ID = 13A, VGS = 10V | 2 | ||
| Turn-On Delay Time | tD(ON) | 11.6 | ns | VDD = 50V, VGS = 10V, ID = 13A, Rg = 6Ω | 2 | ||
| Turn-On Rise Time | tR | 14.1 | ns | VDD = 50V, VGS = 10V, ID = 13A, Rg = 6Ω | 2 | ||
| Turn-Off Delay Time | tD(OFF) | 42.9 | ns | VDD = 50V, VGS = 10V, ID = 13A, Rg = 6Ω | 2 | ||
| Turn-Off Fall Time | tF | 22 | ns | VDD = 50V, VGS = 10V, ID = 13A, Rg = 6Ω | 2 | ||
| Reverse Recovery Time | tRR | 49.8 | ns | IF = 13A, di/dt = 100A/µs | 2 | ||
| Reverse Recovery Charge | QRR | 85.1 | nC | IF = 13A, di/dt = 100A/µs | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | Copper | tin | Terminal Connections Indicator: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe. | 1 |
CAD (KiCad official)
- Symbol:
DMT10H010LSS-13 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
dmt10h010lss-13-etched.step/dmt10h010lss-13-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dmt10h010lss-13.step/dmt10h010lss-13.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (7 pp, sha256
81043f57c2f6029a, retrieved 2026-10-23, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).