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DMS8515E

Public Made by Adom

by adom

ARK micro MOSFETs, SOT-223. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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DMS8515E

ARK micro · MOSFETs · SOT-223

DMS8515E from ARK micro, in a SOT-223. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate, with a gate-to-source rating of ±20 V; a gate-to-source cut-off voltage of -4.0 V to -1.5 V turns off this normally-on depletion-mode device.
2 D passive Drain, connected to the exposed tab, with 850 V drain-to-source breakdown voltage and 0.2 A continuous drain current.
3 S passive Source terminal of the N-channel depletion-mode MOSFET.

Key specifications

Parameter Value
Manufacturer ARK micro
Package SOT-223
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Voltage VDSX 850 V TJ=+25℃ to +150℃ 1
Continuous Drain Current ID 0.2 A TA=25℃ 1
Pulsed Drain Current IDM 0.8 A Repetitive rating, pulse width limited by maximum junction temperature 1
Power Dissipation PD 1.5 W TA=25℃ 1
Gate-to-Source Voltage VGS -20 20 V 1
Soldering Temperature TL 300 ℃ Distance of 1.6mm from case for 10 seconds 1
Operating and Storage Temperature Range TJ & TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Case RθJC 83 ℃/W 1
Drain-to-Source Breakdown Voltage BVDSX 850 V VGS=-10V, ID=250µA 2
Drain-to-Source Leakage Current ID(OFF) 10 µA VDS=850V, VGS=-10V 2
Gate-to-Source Leakage Current (positive) IGSS 20 µA VGS=20V, VDS=0V 2
Gate-to-Source Leakage Current (negative) IGSS -20 µA VGS=-20V, VDS=0V 2
Saturated Drain-to-Source Current IDSS 200 mA VGS=0V, VDS=50V 2
Static Drain-to-Source On-Resistance RDS(ON) 15 30 Ω VGS=0V, ID=200mA [3] 2
Gate-to-Source Cut-off Voltage VGS(OFF) -4 -1.5 V VDS=3V, ID=8µA 2
Diode Forward Voltage VSD 1.2 V ISD=200mA, VGS=-10V 3
Forward Transconductance gfs 720 mS VDS=20V, ID=200mA 2
Input Capacitance Ciss 393.4 pF VGS=-10V, VDS=50V, f=1.0MHz 2
Output Capacitance Coss 20.7 pF VGS=-10V, VDS=50V, f=1.0MHz 2
Reverse Transfer Capacitance Crss 4.1 pF VGS=-10V, VDS=50V, f=1.0MHz 2
Total Gate Charge Qg 13.6 nC VGS=-10V~10V, VDS=150V, ID=200mA 2
Gate-to-Source Charge Qgs 4 nC VGS=-10V~10V, VDS=150V, ID=200mA 2
Gate-to-Drain (Miller) Charge Qgd 3.6 nC VGS=-10V~10V, VDS=150V, ID=200mA 2
Turn-on Delay Time td(on) 18.1 ns VGS=-10V~0V, VDD=150V, ID=200mA, RG=10Ω 2
Rise Time trise 10.5 ns VGS=-10V~0V, VDD=150V, ID=200mA, RG=10Ω 2
Turn-off Delay Time td(off) 35.6 ns VGS=-10V~0V, VDD=150V, ID=200mA, RG=10Ω 2
Fall Time tfall 94 ns VGS=-10V~0V, VDD=150V, ID=200mA, RG=10Ω 2

CAD (KiCad official)

  • Symbol: DMS8515E
  • Footprint: Package_TO_SOT_SMD:SOT-223-3_TabPin2
  • 3D model: SOT-223 (KiCad packages3D, STEP)
  • 3D model files: dms8515e-etched.step / dms8515e-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dms8515e.step / dms8515e.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ARK micro datasheet (7 pp, sha256 2a65e9c106032657, retrieved 2026-10-26, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF