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DMS6014E

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by adom

ARK micro MOSFETs, SOT-223. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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docs dms6014e: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 21d ago
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README.md dms6014e: specified limits as data (metadata.characteristics, 18 rows from the datasheet) · Ray 21d ago

DMS6014E

ARK micro · MOSFETs · SOT-223

DMS6014E from ARK micro, in a SOT-223. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the depletion-mode (normally-on) MOSFET, rated ±20 V gate-to-source, with VGS(OFF) between -3.3 V and -1.5 V.
2 D passive Drain, rated 600 V drain-to-source (VDSX) and 0.08 A continuous drain current.
3 S passive Source terminal of the MOSFET, with a body diode to the drain (VSD max 1.2 V at ISD=100 mA).

Key specifications

Parameter Value
Manufacturer ARK micro
Package SOT-223
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Breakdown Voltage BVDSX 600 V VGS=-5V, ID=250µA 2
Drain-to-Source Leakage Current ID(OFF) 1 µA VDS=600V, VGS= -5V 2
Drain-to-Source Leakage Current ID(OFF) 100 µA VDS=600V, VGS= -5V, TJ=125℃ 2
Gate-to-Source Leakage Current IGSS 20 uA VGS=+20V, VDS=0V 2
Gate-to-Source Leakage Current IGSS -20 uA VGS=-20V, VDS=0V 2
Saturated Drain-to-Source Current IDSS 100 mA VGS=0V, VDS=25V 2
Static Drain-to-Source On-Resistance RDS(ON) 110 150 Ω VGS=0V, ID=50mA [3] 2
Gate-to-Source Cut-off Voltage VGS(OFF) -3.3 -1.5 V VDS=3V, ID=8µA 2
Diode Forward Voltage VSD 1.2 V ISD=100 mA, VGS=-10 V 3
Drain-to-Source Voltage VDSX 600 V TJ=+25℃ to +150℃ [1] 1
Drain-to-Gate Voltage VDGX 600 V TJ=+25℃ to +150℃ [1] 1
Continuous Drain Current ID 0.08 A 1
Pulsed Drain Current IDM 0.32 A Repetitive rating, pulse width limited by maximum junction temperature [2] 1
Power Dissipation PD 1.5 W 1
Gate-to-Source Voltage VGS -20 20 V 1
Soldering Temperature TL 300 ℃ Distance of 1.6mm from case for 10 seconds 1
Operating and Storage Temperature Range TJ and TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Ambient RθJA 83 K/W 1

CAD (KiCad official)

  • Symbol: DMS6014E
  • Footprint: Package_TO_SOT_SMD:SOT-223-3_TabPin2
  • 3D model: SOT-223 (KiCad packages3D, STEP)
  • 3D model files: dms6014e-etched.step / dms6014e-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dms6014e.step / dms6014e.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ARK micro datasheet (6 pp, sha256 57f7cbc8bf50d77a, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF