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DMPH4015SSSQ-13

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Diodes Incorporated MOSFETs, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsdmph4015sssq-13factory-2.0.0extractor-text

Verified DMPH4015SSSQ-13

by Ray · last 13 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

13 Nov 2026RayPublished by the parts factory: tier mfr, 8 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • •array (skip): not an array of element pairs
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: DMPH4015SSSQ-13 · SOIC-8 · 8 pins
  • ✓copper: 8 copper pads, none touching another net
  • ✓datasheet: all 8 pin names found in the 7-page datasheet
  • ✓distributor: lcsc C5451813, digikey 31-DMPH4015SSSQ-13TR-ND, mouser 621-DMPH4015SSSQ-13
  • ✓family: SOIC-8_3.9x4.9mm_P1.27mm
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-b_n6xmrf/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • ✓package_fit: height and body within the datasheet's package drawing (datasheet p.6)
  • ✓pads: 8 pins = 8 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 8 pins agree
  • ✓symbol_text: no pin names collide
  • ✓viewers: viewers/footprint.html 24 kB, viewers/symbol.html 10 kB
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ dmph4015sssq-13.kicad_sym✓ dmph4015sssq-13.kicad_mod✓ dmph4015sssq-13.step
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DMPH4015SSSQ-13

Diodes Incorporated · MOSFETs · SOIC-8

DMPH4015SSSQ-13 from Diodes Incorporated, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model). Symbol and footprint from KiCad-official CAD; the 3D model is generated from the datasheet's package dimensions.

Pinout

Pin Name Type Function
1 S passive Source of the P-channel MOSFET, connected internally to the body diode anode; VDSS is -40V.
2 S passive Source of the P-channel MOSFET, tied in parallel with the other source pins to carry the continuous drain current of up to -11.4A.
3 S passive Source of the P-channel MOSFET, tied in parallel with the other source pins.
4 G input Gate of the P-channel MOSFET with a gate-source rating of ±25V and a threshold of -1.5V to -2.5V.
5 D passive Drain of the P-channel MOSFET, rated for -40V drain-source and pulsed drain current up to -85A.
6 D passive Drain of the P-channel MOSFET, tied in parallel with the other drain pins.
7 D passive Drain of the P-channel MOSFET, tied in parallel with the other drain pins.
8 D passive Drain of the P-channel MOSFET, tied in parallel with the other drain pins.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOIC-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS -40 V TA = +25°C 2
Gate-Source Voltage VGSS -25 25 V TA = +25°C 2
Continuous Drain Current ID -11.4 A VGS = -10V, steady state, TA = +25°C 2
Continuous Drain Current ID -8.1 A VGS = -10V, steady state, TA = +100°C 2
Pulsed Drain Current IDM -85 A 10μs Pulse, Duty Cycle = 1% 2
Maximum Body Diode Continuous Current IS -3 A Note 7 2
Avalanche Current IAS -22 A L = 1mH 2
Avalanche Energy EAS 260 mJ L = 1mH 2
Total Power Dissipation PD 1.4 W Note 6 2
Thermal Resistance, Junction to Ambient RθJA 90 °C/W Note 6 2
Total Power Dissipation PD 1.8 W Note 7 2
Thermal Resistance, Junction to Ambient RθJA 70 °C/W Note 7 2
Thermal Resistance, Junction to Case RθJC 7 °C/W Note 7 2
Operating and Storage Temperature Range TJ, TSTG -55 175 °C 2
Drain-Source Breakdown Voltage BVDSS -40 V VGS = 0V, ID = -250μA 2
Zero Gate Voltage Drain Current IDSS -1 μA VDS = -40V, VGS = 0V 2
Gate-Source Leakage IGSS -100 100 nA VGS = ±25V, VDS = 0V 2
Gate Threshold Voltage VGS(TH) -1.5 -2.5 V VDS = VGS, ID = -250μA 2
Static Drain-Source On-Resistance RDS(ON) 9 11 mΩ VGS = -10V, ID = -9.8A 2
Static Drain-Source On-Resistance RDS(ON) 11 15 mΩ VGS = -4.5V, ID = -9.8A 2
Diode Forward Voltage VSD -0.7 -1 V VGS = 0V, IS = -1A 2
Forward Transfer Admittance /Yfs/ 26 S VDS = -20V, ID = -9.8A 2
Input Capacitance Ciss 4234 pF VDS = -20V, VGS = 0V, f = 1MHz 2
Output Capacitance Coss 1036 pF VDS = -20V, VGS = 0V, f = 1MHz 2
Reverse Transfer Capacitance Crss 526 pF VDS = -20V, VGS = 0V, f = 1MHz 2
Gate Resistance RG 7.8 Ω VDS = 0V, VGS = 0V, f = 1MHz 2
Total Gate Charge (VGS = -4.5V) Qg 42.7 nC VDS = -20V, ID = -9.8A 2
Total Gate Charge (VGS = -10V) Qg 91 nC VDS = -20V, ID = -9.8A 2
Gate-Source Charge Qgs 14.2 nC VDS = -20V, ID = -9.8A 2
Gate-Drain Charge Qgd 13.5 nC VDS = -20V, ID = -9.8A 2
Turn-On Delay Time tD(ON) 13.2 ns VGS = -10V, VDD = -20V, RG = 6Ω, ID = -1A, RL = 20Ω 2
Turn-On Rise Time tR 10 ns VGS = -10V, VDD = -20V, RG = 6Ω, ID = -1A, RL = 20Ω 2
Turn-Off Delay Time tD(OFF) 303 ns VGS = -10V, VDD = -20V, RG = 6Ω, ID = -1A, RL = 20Ω 2
Turn-Off Fall Time tF 138 ns VGS = -10V, VDD = -20V, RG = 6Ω, ID = -1A, RL = 20Ω 2
Reverse Recovery Time tRR 26 ns IF = -9.8A, di/dt = -100A/μs 2
Reverse Recovery Charge QRR 20 nC IF = -9.8A, di/dt = -100A/μs 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts Copper tin x Terminal Connections: See Diagram x Terminals: Finish, Matte Tin Annealed over Copper Leadframe. 1

CAD (land: KiCad; 3D: generated from the datasheet)

  • Symbol: DMPH4015SSSQ-13
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOIC-8, generated on the KiCad land (body 3.85 x 4.9 mm, terminals on the pads, 1.45 mm tall, datasheet A, nominal). KiCad's stock model for this land is taller than the datasheet allows, so the model is generated from the datasheet drawing; the dimensions come from the datasheet drawing where it was read and are defaults otherwise (see provenance.model_3d_generated), not the manufacturer's CAD (STEP)
  • 3D model files: dmph4015sssq-13-etched.step / dmph4015sssq-13-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmph4015sssq-13.step / dmph4015sssq-13.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (7 pp, sha256 d21293f6e1fcc2cd, retrieved 2026-11-13, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: land: KiCad official libraries (CC-BY-SA 4.0); 3D: generated from the datasheet's package dimensions (provenance.model_3d_generated).

Datasheet PDF