component
DMP6110SSD-13
Public Made by Adomby adom
Diodes Incorporated MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownDMP6110SSD-13
Diodes Incorporated · MOSFETs · SO-8
DMP6110SSD-13 from Diodes Incorporated, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (P-channel, VDSS -60V). |
| 2 | G1 | input | Gate of MOSFET 1; gate-source voltage limited to ±20V with threshold of -1V to -3V. |
| 3 | S2 | passive | Source of MOSFET 2 (P-channel, VDSS -60V). |
| 4 | G2 | input | Gate of MOSFET 2; gate-source voltage limited to ±20V with threshold of -1V to -3V. |
| 5 | D2 | passive | Drain of MOSFET 2, connected to pin 6; continuous drain current -3.3A at TA=+25°C. |
| 6 | D2 | passive | Drain of MOSFET 2, connected to pin 5; continuous drain current -3.3A at TA=+25°C. |
| 7 | D1 | passive | Drain of MOSFET 1, connected to pin 8; continuous drain current -3.3A at TA=+25°C. |
| 8 | D1 | passive | Drain of MOSFET 1, connected to pin 7; continuous drain current -3.3A at TA=+25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -60 | V | VGS = 0V, ID = -250µA | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | TJ = +25°C, VDS = -48V, VGS = 0V | 3 | ||
| Gate-Source Leakage | IGSS | 100 | nA | VGS = ±16V, VDS = 0V | 3 | ||
| Gate Threshold Voltage | VGS(TH) | -1 | -3 | V | VDS = VGS, ID = -250µA | 3 | |
| Static Drain-Source On-Resistance | RDS(ON) | 105 | mΩ | VGS = -10V, ID = -4.5A | 3 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 130 | mΩ | VGS = -4.5V, ID = -3.5A | 3 | ||
| Diode Forward Voltage | VSD | -0.7 | -1.2 | V | VGS = 0V, IS = -1A | 3 | |
| Drain-Source Voltage | VDSS | -60 | V | 2 | |||
| Gate-Source Voltage | VGSS | -20 | 20 | V | 2 | ||
| Continuous Drain Current (TC = +25°C) | ID | -7.8 | A | VGS = -10V, TC = +25°C | 2 | ||
| Continuous Drain Current (TC = +70°C) | ID | -6.3 | A | VGS = -10V, TC = +70°C | 2 | ||
| Continuous Drain Current (TA = +25°C) | ID | -3.3 | A | VGS = -10V, TA = +25°C | 2 | ||
| Continuous Drain Current (TA = +70°C) | ID | -2.7 | A | VGS = -10V, TA = +70°C | 2 | ||
| Pulsed Drain Current | IDM | -24 | A | 380µs Pulse, 1% Duty Cycle | 2 | ||
| Maximum Continuous Body Diode Forward Current | IS | -1.8 | A | Note 6 | 2 | ||
| Avalanche Current | IAS | -19 | A | L = 0.1mH, Note 9 | 2 | ||
| Avalanche Energy | EAS | 18 | mJ | L = 0.1mH, Note 9 | 2 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| Total Power Dissipation (TA = +25°C) | PD | 1.2 | W | Notes 5 & 7 | 2 | ||
| Total Power Dissipation (TA = +70°C) | PD | 0.9 | W | Notes 5 & 7 | 2 | ||
| Total Power Dissipation (TA = +25°C) | PD | 1.7 | W | Notes 6 & 7 | 2 | ||
| Total Power Dissipation (TA = +70°C) | PD | 1.1 | W | Notes 6 & 7 | 2 | ||
| Total Power Dissipation (TA = +25°C) | PD | 1.8 | W | Notes 6 & 8 | 2 | ||
| Thermal Resistance, Junction to Ambient (steady state) | RθJA | 104 | °C/W | Notes 5 & 7 | 2 | ||
| Thermal Resistance, Junction to Ambient (t<10s) | RθJA | 45 | °C/W | Notes 5 & 7 | 2 | ||
| Thermal Resistance, Junction to Ambient (steady state) | RθJA | 100 | °C/W | Notes 5 & 8 | 2 | ||
| Thermal Resistance, Junction to Ambient (steady state) | RθJA | 74 | °C/W | Notes 6 & 7 | 2 | ||
| Thermal Resistance, Junction to Ambient (t<10s) | RθJA | 37 | °C/W | Notes 6 & 7 | 2 | ||
| Thermal Resistance, Junction to Ambient (steady state) | RθJA | 71 | °C/W | Notes 6 & 8 | 2 | ||
| Thermal Resistance, Junction to Case | RθJC | 15 | °C/W | Notes 6 & 7 | 2 |
CAD (KiCad official)
- Symbol:
DMP6110SSD-13 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
dmp6110ssd-13-etched.step/dmp6110ssd-13-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dmp6110ssd-13.step/dmp6110ssd-13.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (8 pp, sha256
e617dfb4c1f80575, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).