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DMP4051LK3-13-HXY

Public Made by Adom

by adom

HXY MOSFET MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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DMP4051LK3-13-HXY

HXY MOSFET · MOSFETs · TO-252-2L

DMP4051LK3-13-HXY from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limit is ±25 V, with a threshold of -1.0 to -2.5 V (VDS=VGS, ID=-250μA) and operation with gate drive as low as 4.5 V.
2 D passive Drain, connected to the exposed tab (center lead is cut short in the 2L package); drain-source voltage -40 V, continuous drain current -25 A at TC=25℃.
3 S passive Source of the P-channel MOSFET, with the body diode continuous forward current up to -23 A to the drain.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package TO-252-2L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate-Source Voltage VGS -25 25 V 1
Continuous Drain Current, VGS @ 10V (TC=100℃) ID@TC=100℃ -12 A 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Drain-Source Voltage VDS -40 V 1
Continuous Drain Current, VGS @ 10V (TC=25℃) ID@TC=25℃ -25 A 1
Pulsed Drain Current IDM -40 A 1
Total Power Dissipation PD@TC=25℃ 8 W 1
Thermal Resistance Junction-ambient RθJA 62 ℃/W 1
Thermal Resistance Junction-Case RθJC 18.8 ℃/W 1
Drain-Source Breakdown Voltage V(BR)DSS -40 V VGS=0V, ID= -250μA 2
Zero Gate Voltage Drain Current IDSS -1 μA VDS= -40V, VGS=0V 2
Gate to Body Leakage Current IGSS -100 100 nA VDS=0V, VGS= ±20V 2
Gate Threshold Voltage VGS(th) -1 -1.6 -2.5 V VDS=VGS, ID= -250μA 2
Static Drain-Source on-Resistance RDS(on) 31 44 mΩ VGS= -10V, ID= -8A 2
Static Drain-Source on-Resistance RDS(on) 44 60 mΩ VGS= -4.5V, ID= -5A 2
Maximum Continuous Drain to Source Diode Forward Current IS -23 A 2
Maximum Pulsed Drain to Source Diode Forward Current ISM -40 A 2
Drain to Source Diode Forward Voltage VSD -0.8 -1.2 V VGS=0V, IS= -10A 2
Input Capacitance Ciss 1034 pF VDS= -20V, VGS=0V, f=1.0MHz 2
Output Capacitance Coss 107 pF 2
Reverse Transfer Capacitance Crss 79.5 pF 2
Total Gate Charge Qg 20 nC VDS= -20V, ID= -5A, VGS= -10V 2
Gate-Source Charge Qgs 3.5 nC 2
Gate-Drain (Miller) Charge Qgd 4.2 nC 2
Turn-on Delay Time td(on) 8 ns VDD= -20V, ID= -5A, VGS= -10V, RGEN=2.5Ω 2
Turn-on Rise Time tr 15 ns 2
Turn-off Delay Time td(off) 23 ns 2
Turn-off Fall Time tf 9 ns 2
Reverse Recovery Time trr 29 ns VGS =0V, IS=-5A, di/dt=100A/μs 2
Reverse Recovery Charge Qrr 20 nC 2

CAD (KiCad official)

  • Symbol: DMP4051LK3-13-HXY
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: dmp4051lk3-13-hxy-etched.step / dmp4051lk3-13-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmp4051lk3-13-hxy.step / dmp4051lk3-13-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (7 pp, sha256 3bc8f7967445e9e1, retrieved 2026-10-20, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF