component
DMP4025LSS-13
Public Made by Adomby adom
Diodes Incorporated MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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| dmp4025lss-13.lbr | 12d ago |
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| README.md | 12d ago |
DMP4025LSS-13
Diodes Incorporated · MOSFETs · SO-8
DMP4025LSS-13 from Diodes Incorporated, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET, tied to pins 2 and 3 (device rated VDSS -40V, continuous ID -8.0A). |
| 2 | S | passive | Source of the P-channel MOSFET, tied to pins 1 and 3 (device rated VDSS -40V, continuous ID -8.0A). |
| 3 | S | passive | Source of the P-channel MOSFET, tied to pins 1 and 2 (device rated VDSS -40V, continuous ID -8.0A). |
| 4 | G | input | Gate of the P-channel MOSFET, with VGSS rating of ±20V and threshold VGS(th) of -0.8V min to -1.8V max. |
| 5 | D | passive | Drain of the P-channel MOSFET, tied to pins 6, 7 and 8 (RDS(on) max 25mΩ at VGS=-10V). |
| 6 | D | passive | Drain of the P-channel MOSFET, tied to pins 5, 7 and 8 (RDS(on) max 25mΩ at VGS=-10V). |
| 7 | D | passive | Drain of the P-channel MOSFET, tied to pins 5, 6 and 8 (RDS(on) max 25mΩ at VGS=-10V). |
| 8 | D | passive | Drain of the P-channel MOSFET, tied to pins 5, 6 and 7 (RDS(on) max 25mΩ at VGS=-10V). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SO-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -40 | V | ID = -250μA, VGS = 0V | 4 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS = -40V, VGS = 0V | 4 | ||
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = ±20V, VDS = 0V | 4 | |
| Gate Threshold Voltage | VGS(th) | -0.8 | -1.3 | -1.8 | V | ID = -250μA, VDS = VGS | 4 |
| Static Drain-Source On-Resistance | RDS (ON) | 18 | 25 | mΩ | VGS = -10V, ID = -3A | 4 | |
| Static Drain-Source On-Resistance | RDS (ON) | 30 | 45 | mΩ | VGS = -4.5V, ID = -3A | 4 | |
| Diode Forward Voltage | VSD | -0.7 | -1 | V | IS = -1A, VGS = 0V | 4 | |
| Drain-Source Voltage | VDSS | -40 | V | TA = 25°C | 2 | ||
| Gate-Source Voltage | VGSS | -20 | 20 | V | TA = 25°C | 2 | |
| Continuous Drain Current | ID | -8 | A | VGS = -10V, TA = 25°C (Notes 6) | 2 | ||
| Continuous Drain Current | ID | -6.9 | A | VGS = -10V, TA = 70°C (Notes 6) | 2 | ||
| Continuous Drain Current | ID | -6 | A | VGS = -10V (Notes 5) | 2 | ||
| Pulsed Drain Current | IDM | -30 | A | VGS = -10V (Notes 7) | 2 | ||
| Continuous Source Current (Body diode) | IS | -8 | A | (Notes 7) | 2 | ||
| Pulsed Source Current (Body diode) | ISM | -30 | A | (Notes 7) | 2 | ||
| Power Dissipation | PD | 1.52 | W | TA = 25°C (Notes 5) | 2 | ||
| Power Dissipation | PD | 2.4 | W | TA = 25°C (Notes 6) | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 82 | °C/W | (Notes 5) | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 52 | °C/W | (Notes 6) | 2 | ||
| Thermal Resistance, Junction to Lead | RθJL | 48.85 | °C/W | (Notes 8) | 2 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| Forward Transconductance | gfs | 16.6 | S | VDS = -5V, ID = -3A | 4 | ||
| Input Capacitance | Ciss | 1640 | pF | VDS = -20V, VGS = 0V, f = 1MHz | 4 | ||
| Output Capacitance | Coss | 179 | pF | VDS = -20V, VGS = 0V, f = 1MHz | 4 | ||
| Reverse Transfer Capacitance | Crss | 128 | pF | VDS = -20V, VGS = 0V, f = 1MHz | 4 | ||
| Gate Resistance | Rg | 6.43 | Ω | VDS = 0V, VGS = 0V, f = 1MHz | 4 | ||
| Total Gate Charge | Qg | 14 | nC | VGS = -4.5V, VDS = -20V, ID = -3A | 4 | ||
| Total Gate Charge | Qg | 33.7 | nC | VGS = -10V, VDS = -20V, ID = -3A | 4 | ||
| Gate-Source Charge | Qgs | 5.5 | nC | VGS = -10V, VDS = -20V, ID = -3A | 4 | ||
| Gate-Drain Charge | Qgd | 7.3 | nC | VGS = -10V, VDS = -20V, ID = -3A | 4 | ||
| Turn-On Delay Time | tD(on) | 6.9 | ns | VDD = -20V, VGS = -10V, ID = -3A | 4 | ||
| Turn-On Rise Time | tr | 14.7 | ns | VDD = -20V, VGS = -10V, ID = -3A | 4 | ||
| Turn-Off Delay Time | tD(off) | 53.7 | ns | VDD = -20V, VGS = -10V, ID = -3A | 4 | ||
| Turn-Off Fall Time | tf | 30.9 | ns | VDD = -20V, VGS = -10V, ID = -3A | 4 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | Copper | tin | • Terminals: Finish - Matte Tin annealed over Copper lead frame. | 1 |
CAD (KiCad official)
- Symbol:
DMP4025LSS-13 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
dmp4025lss-13-etched.step/dmp4025lss-13-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dmp4025lss-13.step/dmp4025lss-13.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (8 pp, sha256
3464468c6ccc6d61, retrieved 2026-10-26, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).