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Ray Publish 0.1.0 47f2c3b 9d ago

DMP3085LSD-HXY

HXY MOSFET · MOSFETs · SOP-8

DMP3085LSD-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source terminal of the first P-channel MOSFET; the absolute maximum Gate-Source Voltage is ±20 V and Drain-Source Voltage is -30 V.
2 G1 input Gate terminal of the first P-channel MOSFET, rated for a Gate-Source Voltage of ±20 V.
3 S2 passive Source terminal of the second P-channel MOSFET; the absolute maximum Drain-Source Voltage is -30 V.
4 G2 input Gate terminal of the second P-channel MOSFET, rated for a Gate-Source Voltage of ±20 V.
5 D2 passive Drain terminal of the second P-channel MOSFET; the absolute maximum Drain-Source Voltage is -30 V and continuous drain current is -5.3 A.
6 D2 passive Drain terminal of the second P-channel MOSFET (internally common with pin 5); the absolute maximum Drain-Source Voltage is -30 V.
7 D1 passive Drain terminal of the first P-channel MOSFET (internally common with pin 8); the absolute maximum Drain-Source Voltage is -30 V and continuous drain current is -5.3 A.
8 D1 passive Drain terminal of the first P-channel MOSFET; the absolute maximum Drain-Source Voltage is -30 V and continuous drain current is -5.3 A.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOP-8
Category Triode/MOS Tube/Transistor
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -30 V TA=25℃ unless otherwise noted 1
Gate-Source Voltage VGS -20 20 V TA=25℃ unless otherwise noted 1
Drain Current-Continuous ID -5.3 A TA=25℃ unless otherwise noted 1
Drain Current-Pulsed IDM -20 A Note 1: repetitive rating, pulse width limited by maximum junction temperature 1
Maximum Power Dissipation PD 2.6 W TA=25℃ unless otherwise noted 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ TA=25℃ unless otherwise noted 1
Thermal Resistance, Junction-to-Ambient RθJA 49 ℃/W Surface mounted on FR4 board, t ≤ 10 sec (Note 2) 1
Drain-Source Breakdown Voltage BVDSS -30 -33 V VGS=0V, ID=-250μA 2
Zero Gate Voltage Drain Current IDSS -1 μA VDS=-24V, VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Gate Threshold Voltage VGS(th) -1 -1.6 -3 V VDS=VGS, ID=-250μA 2
Drain-Source On-State Resistance RDS(ON) 35 42 mR VGS=-10V, ID=-5.3A 2
Drain-Source On-State Resistance RDS(ON) 70 85 mR VGS=-4.5V, ID=-4.2A 2
Forward Transconductance gFS 4 7 S VDS=-15V, ID=-4.5A 2
Diode Forward Voltage VSD -1.2 V VGS=0V, IS=-5.3A 2

CAD (KiCad official)

  • Symbol: DMP3085LSD-HXY
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: dmp3085lsd-hxy-etched.step / dmp3085lsd-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmp3085lsd-hxy.step / dmp3085lsd-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (7 pp, sha256 12379fd219653926, retrieved 2026-10-29, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF