# DMP3085LSD-13

**Diodes Incorporated** · MOSFETs · SO-8

DMP3085LSD-13 from Diodes Incorporated, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source terminal of the first P-channel MOSFET; the datasheet gives VDSS of -30V and VGSS of ±20V for the device. |
| 2 | G1 | input | Gate terminal of the first P-channel MOSFET; VGSS is rated at ±20V and VGS(TH) is -1V to -3V at ID = -250µA. |
| 3 | S2 | passive | Source terminal of the second P-channel MOSFET; the datasheet gives VDSS of -30V and VGSS of ±20V for the device. |
| 4 | G2 | input | Gate terminal of the second P-channel MOSFET; VGSS is rated at ±20V and VGS(TH) is -1V to -3V at ID = -250µA. |
| 5 | D2 | passive | Drain terminal of the second P-channel MOSFET; continuous drain current is rated at -3.9A at TA = +25°C (steady state, VGS = -10V). |
| 6 | D2 | passive | Drain terminal of the second P-channel MOSFET, bonded together with pin 5; continuous drain current is rated at -3.9A at TA = +25°C (steady state, VGS = -10V). |
| 7 | D1 | passive | Drain terminal of the first P-channel MOSFET, bonded together with pin 8; continuous drain current is rated at -3.9A at TA = +25°C (steady state, VGS = -10V). |
| 8 | D1 | passive | Drain terminal of the first P-channel MOSFET; continuous drain current is rated at -3.9A at TA = +25°C (steady state, VGS = -10V). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -30 |  |  | V | VGS = 0V, ID = -250µA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -1 | µA | VDS = -30V, VGS = 0V | 2 |
| Gate-Source Leakage | IGSS | -100 |  | 100 | nA | VGS = ±20V, VDS = 0V | 2 |
| Gate Threshold Voltage | VGS(TH) | -1 |  | -3 | V | VDS = VGS, ID = -250µA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 50 | 70 | mΩ | VGS = -10V, ID = -5.3A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 75 | 95 | mΩ | VGS = -4.5V, ID = -4.2A | 2 |
| Diode Forward Voltage | VSD |  | -0.7 | -1.2 | V | VGS = 0V, IS = -1A | 2 |
| Drain-Source Voltage | VDSS |  |  | -30 | V |  | 2 |
| Gate-Source Voltage | VGSS | -20 |  | 20 | V |  | 2 |
| Continuous Drain Current (steady state) | ID |  |  | -3.9 | A | VGS = -10V, steady state, TA = +25°C (Note 6) | 2 |
| Continuous Drain Current (steady state) | ID |  |  | -3.1 | A | VGS = -10V, steady state, TA = +70°C (Note 6) | 2 |
| Continuous Drain Current (t<10s) | ID |  |  | -4.9 | A | VGS = -10V, t<10s, TA = +25°C (Note 6) | 2 |
| Continuous Drain Current (t<10s) | ID |  |  | -3.9 | A | VGS = -10V, t<10s, TA = +70°C (Note 6) | 2 |
| Maximum Continuous Body Diode Forward Current | IS |  |  | -2.5 | A | Note 6 | 2 |
| Pulsed Drain Current | IDM |  |  | -20 | A | 10µs Pulse, Duty Cycle = 1% | 2 |
| Total Power Dissipation | PD |  |  | 1.1 | W | TA = +25°C (Note 5) | 2 |
| Total Power Dissipation | PD |  |  | 0.7 | W | TA = +70°C (Note 5) | 2 |
| Total Power Dissipation | PD |  |  | 1.7 | W | TA = +25°C (Note 6) | 2 |
| Thermal Resistance, Junction to Ambient, steady state | RθJA |  |  | 107 | °C/W | Steady state (Note 5) | 2 |
| Thermal Resistance, Junction to Ambient, t<10s | RθJA |  |  | 70 | °C/W | t<10s (Note 5) | 2 |
| Thermal Resistance, Junction to Ambient, steady state | RθJA |  |  | 75 | °C/W | Steady state (Note 6) | 2 |
| Thermal Resistance, Junction to Ambient, t<10s | RθJA |  |  | 50 | °C/W | t<10s (Note 6) | 2 |
| Thermal Resistance, Junction to Case | RθJC |  |  | 14.5 | °C/W |  | 2 |
| Operating and Storage Temperature Range | TJ, TSTG | -55 |  | 150 | °C |  | 2 |

## Materials and finish

As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).

| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | Copper | tin |  Terminal Connections Indicator: See Diagram  Terminals: Finish  Matte Tin Annealed over Copper Lead | 1 |

## CAD (KiCad official)

- Symbol: `DMP3085LSD-13`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files: `dmp3085lsd-13-etched.step` / `dmp3085lsd-13-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `dmp3085lsd-13.step` / `dmp3085lsd-13.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Diodes Incorporated datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588879840732307456) (7 pp, sha256 `a89b3276f7f1011b`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/dmp3085lsd-13-datasheet.pdf)