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DMP3056LSDQ-13

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Diodes Incorporated MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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DMP3056LSDQ-13

Diodes Incorporated · MOSFETs · SO-8

DMP3056LSDQ-13 from Diodes Incorporated, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source terminal of P-channel MOSFET 1 in the dual device; the device BVDSS is -30 V and VGSS is ±20 V.
2 G1 input Gate terminal of P-channel MOSFET 1; VGSS is rated ±20 V and VGS(TH) is -1 V min, -2.1 V max.
3 S2 passive Source terminal of P-channel MOSFET 2 in the dual device; the device BVDSS is -30 V and VGSS is ±20 V.
4 G2 input Gate terminal of P-channel MOSFET 2; VGSS is rated ±20 V and VGS(TH) is -1 V min, -2.1 V max.
5 D2 passive Drain terminal of P-channel MOSFET 2; continuous drain current is -6.9 A at TA = +25°C and pulsed drain current is -24 A.
6 D2 passive Drain terminal of P-channel MOSFET 2 (second drain pin of the same drain); continuous drain current is -6.9 A at TA = +25°C and pulsed drain current is -24 A.
7 D1 passive Drain terminal of P-channel MOSFET 1; continuous drain current is -6.9 A at TA = +25°C and pulsed drain current is -24 A.
8 D1 passive Drain terminal of P-channel MOSFET 1 (second drain pin of the same drain); continuous drain current is -6.9 A at TA = +25°C and pulsed drain current is -24 A.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS -30 V VGS = 0V, ID = -250µA 2
Gate Threshold Voltage VGS(TH) -1 -1.7 -2.1 V VDS = VGS, ID = -250µA 2
Static Drain-Source On-Resistance RDS(ON) 45 m VGS = -10V, ID = -6.0A 2
Static Drain-Source On-Resistance RDS(ON) 65 m VGS = -4.5V, ID = -5.0A 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = -30V, VGS = 0V 2
Gate-Source Leakage IGSS -100 100 nA VGS = ±20V, VDS = 0V 2
Gate-Source Leakage IGSS -800 800 nA VGS = ±25V, VDS = 0V 2
Diode Forward Voltage VSD -0.5 -1.2 V VGS = 0V, IS = -1.7A 2
Drain-Source Voltage VDSS -30 V 2
Gate-Source Voltage VGSS -20 20 V 2
Drain Current (Steady State) ID -6.9 A Steady state, TA = +25°C (Note 5) 2
Drain Current (Steady State) ID -5.8 A Steady state, TA = +70°C (Note 5) 2
Pulsed Drain Current IDM -24 A Pulse width 10S, Duty Cycle 1% (Note 6) 2
Total Power Dissipation PD 2.5 W Note 5 2
Thermal Resistance, Junction to Ambient RJA 50 °C/W Note 5 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts Copper tin  Terminal Connections Indicator: See Diagram  Terminals: Finish - Matte Tin Annealed over Copper 1

CAD (KiCad official)

  • Symbol: DMP3056LSDQ-13
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: dmp3056lsdq-13-etched.step / dmp3056lsdq-13-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmp3056lsdq-13.step / dmp3056lsdq-13.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (6 pp, sha256 f76cc995582f4d6a, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF