component
DMP3056LDM
Public Made by Adomby adom
Diodes Incorporated MOSFETs, SOT-26. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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Contents
README
markdownDMP3056LDM
Diodes Incorporated · MOSFETs · SOT-26
DMP3056LDM from Diodes Incorporated, in a SOT-26. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | passive | Drain, connected internally to the other drain pins (pins 2, 5, 6); the drain-source voltage rating is -30V. |
| 2 | D | passive | Drain, connected internally to the other drain pins (pins 1, 5, 6); the drain-source voltage rating is -30V. |
| 3 | G | input | Gate, with a gate-source voltage rating of ±20V and a threshold of -1.0V to -2.1V. |
| 4 | S | passive | Source of the P-channel MOSFET; the continuous body diode forward current is -2.3A. |
| 5 | D | passive | Drain, connected internally to the other drain pins (pins 1, 2, 6); the continuous drain current is -4.3A at TA = +25°C with VGS = -10V. |
| 6 | D | passive | Drain, connected internally to the other drain pins (pins 1, 2, 5); the continuous drain current is -4.3A at TA = +25°C with VGS = -10V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-26 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -30 | V | VGS = 0V, ID = -250µA | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | TJ = +25°C, VGS = 0V, VDS = -30V | 3 | ||
| Gate-Body Leakage Current | IGSS | 100 | nA | VGS = ±20V, VDS = 0V | 3 | ||
| Gate-Body Leakage Current | IGSS | 800 | nA | VGS = ±25V, VDS = 0V | 3 | ||
| Gate Threshold Voltage | VGS(TH) | -1 | -2.1 | V | VGS = VDS, ID = -250µA | 3 | |
| Static Drain-Source On-Resistance | RDS(ON) | 45 | mΩ | VGS = -10V, ID = -5A | 3 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 65 | mΩ | VGS = -4.5V, ID = -4.2A | 3 | ||
| Diode Forward Voltage | VSD | -1.2 | V | VGS = 0V, IS = -1.7A | 3 | ||
| Drain-Source Voltage | VDSS | -30 | V | TA = +25°C | 2 | ||
| Gate-Source Voltage | VGSS | -20 | 20 | V | TA = +25°C | 2 | |
| Continuous Drain Current, steady state | ID | -4.3 | A | VGS = -10V, TA = +25°C, Note 5 | 2 | ||
| Continuous Drain Current, t < 10s | ID | -5.8 | A | VGS = -10V, t < 10s, TA = +25°C, Note 5 | 2 | ||
| Maximum Continuous Body Diode Forward Current | IS | -2.3 | A | Note 5 | 2 | ||
| Pulsed Drain Current | IDM | -13 | A | 10µs Pulse, Duty Cycle = 1% | 2 | ||
| Total Power Dissipation (min pad) | PD | 1.25 | W | TA = +25°C, Note 6 | 2 | ||
| Total Power Dissipation (1 inch² pad) | PD | 1.5 | W | TA = +25°C, Note 5 | 2 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| Thermal Resistance, Junction to Ambient (min pad) | RθJA | 100 | °C/W | Steady State, Note 6 | 2 | ||
| Thermal Resistance, Junction to Ambient (1 inch² pad) | RθJA | 86 | °C/W | Steady State, Note 5 | 2 | ||
| Thermal Resistance, Junction to Case | RθJC | 15.6 | °C/W | Note 5 | 2 | ||
| Forward Transconductance | gFS | 8 | s | VDS = -10V, ID = -4.3A | 3 | ||
| Input Capacitance | Ciss | 948 | pF | VGS = 0V, VDS = -25V, f = 1.0MHz | 3 | ||
| Output Capacitance | Coss | 105 | pF | VGS = 0V, VDS = -25V, f = 1.0MHz | 3 | ||
| Reverse Transfer Capacitance | Crss | 100 | pF | VGS = 0V, VDS = -25V, f = 1.0MHz | 3 | ||
| Total Gate Charge | Qg | 10.1 | nC | VDS = -15V, VGS = -4.5V, ID = -6A | 3 | ||
| Total Gate Charge | Qg | 21.1 | nC | VDS = -15V, VGS = -10V, ID = -6A | 3 | ||
| Gate-Source Charge | Qgs | 2.8 | nC | VDS = -15V, VGS = -10V, ID = -6A | 3 | ||
| Gate-Drain Charge | Qgd | 3.2 | nC | VDS = -15V, VGS = -10V, ID = -6A | 3 | ||
| Gate Resistance | Rg | 13.15 | Ω | VDS = 0V, VGS = 0V, f = 1MHz | 3 | ||
| Turn-On Delay Time | tD(ON) | 10.2 | ns | VDS = -15V, VGS = -10V, ID = -1A, Rg = 6.0Ω | 3 | ||
| Rise Time | tR | 6.6 | ns | VDS = -15V, VGS = -10V, ID = -1A, Rg = 6.0Ω | 3 | ||
| Turn-Off Delay Time | tD(OFF) | 50.1 | ns | VDS = -15V, VGS = -10V, ID = -1A, Rg = 6.0Ω | 3 | ||
| Fall Time | tF | 22.3 | ns | VDS = -15V, VGS = -10V, ID = -1A, Rg = 6.0Ω | 3 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | Copper | tin | Terminals: Finish, Matte Tin Annealed over Copper Leadframe. | 1 |
CAD (KiCad official)
- Symbol:
DMP3056LDM - Footprint:
Package_TO_SOT_SMD:SOT-23-6 - 3D model: SOT-26 (KiCad packages3D, STEP)
- 3D model files:
dmp3056ldm-etched.step/dmp3056ldm-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dmp3056ldm.step/dmp3056ldm.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (8 pp, sha256
e793539935a2b917, retrieved 2026-10-27, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).