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Ray Publish 0.1.0 8481eaf 8d ago

DMP3028LSD-HXY

HXY MOSFET · MOSFETs · SOP-8

DMP3028LSD-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source terminal of the first P-channel MOSFET in this dual device, which is rated VDS = -30 V and VGS = ±20 V.
2 G1 input Gate terminal of the first P-channel MOSFET; the device gate-source voltage is rated ±20 V.
3 S2 passive Source terminal of the second P-channel MOSFET in this dual device, which is rated VDS = -30 V and VGS = ±20 V.
4 G2 input Gate terminal of the second P-channel MOSFET; the device gate-source voltage is rated ±20 V.
5 D2 passive Drain terminal of the second P-channel MOSFET; the device continuous drain current is rated -8.5 A.
6 D2 passive Drain terminal of the second P-channel MOSFET, tied internally with pin 5; the device continuous drain current is rated -8.5 A.
7 D1 passive Drain terminal of the first P-channel MOSFET; the device continuous drain current is rated -8.5 A.
8 D1 passive Drain terminal of the first P-channel MOSFET, tied internally with pin 7; the device continuous drain current is rated -8.5 A.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOP-8
Category Triode/MOS Tube/Transistor
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS -30 V VGS=0V, ID=-250uA 2
Gate Threshold Voltage VGS(th) -1 -2.5 V VGS=VDS, ID=-250uA 2
Drain-Source Leakage Current (TJ=25℃) IDSS -1 uA VDS=-24V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current (TJ=55℃) IDSS -5 uA VDS=-24V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Diode Forward Voltage VSD -1.2 V VGS=0V, IS=-1A, TJ=25℃ 2
Continuous Source Current IS -6.5 A VG=VD=0V, Force Current 2
Pulsed Source Current ISM -26 A 2
Static Drain-Source On-Resistance (VGS=-10V) RDS(ON) 18 mΩ VGS=-10V, ID=-6A 2
Static Drain-Source On-Resistance (VGS=-4.5V) RDS(ON) 28 mΩ VGS=-4.5V, ID=-4A 2
Drain-Source Voltage VDS -30 V TA=25°C unless otherwise noted 1
Gate-Source Voltage VGS -20 20 V TA=25°C unless otherwise noted 1
Drain Current-Continuous ID -8.5 A TA=25°C unless otherwise noted 1
Drain Current-Pulsed (Note 1) IDM -26 A TA=25°C unless otherwise noted 1
Maximum Power Dissipation PD 1.5 W TA=25°C unless otherwise noted 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ TA=25°C unless otherwise noted 1
Thermal Resistance, Junction-to-Ambient RθJA 85 ℃/W 1

CAD (KiCad official)

  • Symbol: DMP3028LSD-HXY
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: dmp3028lsd-hxy-etched.step / dmp3028lsd-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmp3028lsd-hxy.step / dmp3028lsd-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 cf9df88f6333fac2, retrieved 2026-10-30, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF